Electrode structure and semiconductor light-emitting device having a high region part and a low region part

1. A semiconductor light-emitting device comprising:

a semiconductor light-emitting layer having a main surface and generating red light;

an indium tin oxide (ITO) electrode including ITO and covering the main surface of the semiconductor light-emitting layer;

an Al electrode including Al and covering the ITO electrode; and

a barrier electrode including at least one of TiN and Cr having a light transmissivity to transmit light, and interposed in a region between the ITO electrode and the Al electrode in a thickness direction of the semiconductor light-emitting layer,

wherein the barrier electrode includes a first region interposed in the region between the ITO electrode and the Al electrode, and a second region drawn out from the first region to a region outside the Al electrode to surround a periphery of the Al electrode in a plan view,

wherein the first region has a first surface in contact with the Al electrode,

wherein the second region has a second surface that extends to be flush with the first surface,

wherein a sidewall of the Al electrode includes a first inclined surface, and

wherein a first metal layer is formed on the Al electrode to cover the first inclined surface.

2. The device of claim 1 , wherein the second region of the barrier electrode has a lead-out length exceeding a thickness of the barrier electrode.

3. The device of claim 1 , wherein the second region of the barrier electrode has a lead-out length exceeding a thickness of the Al electrode.

4. The device of claim 1 , wherein the Al electrode is formed in a trapezoidal shape in a cross-sectional view.

5. The device of claim 1 , wherein the barrier electrode is formed of TiN or Cr.

6. The device of claim 1 , wherein the barrier electrode is formed of TiN.

7. The device of claim 1 , wherein the ITO electrode is a light-transmitting layer that transmits the light generated by the semiconductor light-emitting layer, and

wherein the Al electrode is a light-reflecting electrode that reflects the light generated by the semiconductor light-emitting layer.

8. The device of claim 1 , wherein the semiconductor light-emitting layer generates light having a peak emission wavelength in a range of 550 nm or more and 900 nm or less.

9. The device of claim 1 , wherein a high region part and a low region part are formed on the main surface of the semiconductor light-emitting layer, the low region part being located lower than the high region part in a thickness direction of the semiconductor light-emitting layer, and

wherein the ITO electrode, the Al electrode, and the barrier electrode are formed on the low region part.

10. The device of claim 1 , wherein a sidewall of the first metal layer includes a second inclined surface, and

wherein a second metal layer is formed on the first metal layer to cover the second inclined surface.

11. The device of claim 10 , wherein an inclination angle of the second inclined surface with respect to the main surface is larger than an inclination angle of the first inclined surface with respect to the main surface.

12. The device of claim 10 , wherein a sidewall of the second metal layer includes a third inclined surface, and

wherein an inclination angle of the third inclined surface with respect to the main surface is larger than an inclination angle of the second inclined surface with respect to the main surface.

13. The device of claim 10 , wherein the second metal layer is formed of Au.

14. The device of claim 10 , wherein the second metal layer includes a swelling protruding upwards from a top of the second metal layer.

15. The device of claim 14 , wherein the swelling extends along a periphery of the top in the plan view.

16. The device of claim 1 , wherein the first metal layer is formed of Ti.