Additive manufacturing of a frontside or backside interconnect of a semiconductor die

1. A method for fabricating a semiconductor die package, the method comprising:

providing a semiconductor transistor die, the semiconductor transistor die comprising a first contact pad on a first lower main face and a second contact pad on an upper main face;

fabricating a frontside electrical conductor onto the second contact pad and also a backside electrical conductor onto the first contact pad; and

applying an encapsulant covering the semiconductor die and at least a portion of the frontside electrical conductor,

wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

2. The method of claim 1 , wherein fabricating the frontside electrical conductor and/or the backside electrical conductor comprises:

i. depositing a metallic material onto the second contact pad and/or the first contact pad; and

ii. irradiating at least a portion of the metallic material with a laser beam.

3. The method of claim 2 , further comprising:

repeating steps i. and ii. by applying further metallic material onto the fabricated metallic structure and irradiating at least a portion of the further metallic material with the laser beam.

4. The method of claim 2 , wherein the metallic material is deposited in the form of a metallic powder or metallic balls or blocks.

5. The method of claim 1 , wherein before fabricating the electrical conductor, no solder layer is deposited onto the second contact pad and/or the first contact pad.

6. The method of claim 1 , wherein the semiconductor die is one or more of a wide bandgap semiconductor die, a SiC die, or a GaN die.

7. The method of claim 1 , wherein the semiconductor transistor die is a power IGBT die, or a power MOSFET die, or a thyristor die.

8. The method of claim 1 , wherein the encapsulant is applied such that an upper surface of the metallic structure is at least in part not covered by the encapsulant.

9. The method of claim 1 , wherein the semiconductor transistor die comprises one or more further contact pads on the second main face, the method further comprising:

fabricating an electrical conductor on one or more of the one or more further contact pads by laser-assisted structuring of metallic structures.

10. The method of claim 1 , further comprising:

before fabricating the metallic structure, disposing a barrier layer or a barrier layer stack including two or more barrier layers onto the second contact pad and/or the first contact pad.

11. The method of claim 1 , further comprising:

providing a die carrier; and

disposing the semiconductor die onto the die carrier.

12. A method for fabricating a semiconductor die package, the method comprising:

providing a semiconductor transistor die, the semiconductor transistor die comprising a first contact pad on a first lower main face and a second contact pad on an upper main face;

fabricating, by laser-assisted structuring of a metallic structure, a frontside electrical conductor onto the second contact pad; and

applying an encapsulant covering the semiconductor die and at least a portion of the frontside electrical conductor.

13. The method of claim 12 , wherein fabricating the frontside electrical conductor comprises:

i. depositing a metallic material onto the second contact pad; and

ii. irradiating at least a portion of the metallic material with a laser beam.