Semiconductor device and method for manufacturing the same
A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer.
1. A semiconductor device comprising:
a substrate;
a pixel portion over the substrate; and
a driver circuit portion over the substrate,
wherein the pixel portion comprises a display element,
wherein the driver circuit portion comprises:
a conductive layer;
a first semiconductor layer and a second semiconductor layer arranged in a first direction;
an insulating layer between the conductive layer and each of the first semiconductor layer and the second semiconductor layer;
a source electrode layer electrically connected to the first semiconductor layer and the second semiconductor layer; and
a drain electrode layer electrically connected to the first semiconductor layer and the second semiconductor layer,
wherein a part of the first semiconductor layer is included in a first transistor and a part of the second semiconductor layer is included in a second transistor,
wherein a part of the conductive layer is included in the first transistor and a part of the conductive layer is included in the second transistor,
wherein the conductive layer extends beyond both side edges of the first semiconductor layer in the first direction, the first direction being the same as a channel width direction of the first transistor,
wherein the conductive layer extends beyond both side edges of the second semiconductor layer in the first direction, a channel width direction of the second transistor being the same as the first direction,
wherein the source electrode layer extends beyond the both side edges of the first semiconductor layer,
wherein the source electrode layer extends beyond the both side edges of the second semiconductor layer,
wherein the drain electrode layer extends beyond the both side edges of the first semiconductor layer,
wherein the drain electrode layer extends beyond the both side edges of the second semiconductor layer,
wherein the conductive layer includes a first region overlapping with a channel formation region of the first transistor, a second region overlapping with a channel formation region of the second transistor, and a third region not overlapping with neither the channel formation region of the first transistor nor the channel formation region of the second transistor, and
wherein, in a second direction perpendicular to the first direction, a width of the conductive layer in the third region is broader than a width of the conductive layer in the first region and a width of the conductive layer in the second region.
2. The semiconductor device according to claim 1 , wherein the first direction is a direction in which the semiconductor device is bent.
3. An electronic device comprising the semiconductor device according to claim 1 .
4. A semiconductor device comprising:
a flexible substrate;
a pixel portion over the flexible substrate; and
a driver circuit portion over the flexible substrate,
wherein the pixel portion comprises a display element,
wherein the driver circuit portion comprises:
a conductive layer;
a first semiconductor layer and a second semiconductor layer arranged in a first direction;
an insulating layer between the conductive layer and each of the first semiconductor layer and the second semiconductor layer;
a source electrode layer electrically connected to the first semiconductor layer and the second semiconductor layer; and
a drain electrode layer electrically connected to the first semiconductor layer and the second semiconductor layer,
wherein a part of the first semiconductor layer is included in a first transistor and a part of the second semiconductor layer is included in a second transistor,
wherein a part of the conductive layer is included in the first transistor and a part of the conductive layer is included in the second transistor,
wherein the conductive layer extends beyond both side edges of the first semiconductor layer in the first direction, the first direction being the same as a channel width direction of the first transistor,
wherein the conductive layer extends beyond both side edges of the second semiconductor layer in the first direction, a channel width direction of the second transistor being the same as the first direction,
wherein the source electrode layer extends beyond the both side edges of the first semiconductor layer,
wherein the source electrode layer extends beyond the both side edges of the second semiconductor layer,
wherein the drain electrode layer extends beyond the both side edges of the first semiconductor layer,
wherein the drain electrode layer extends beyond the both side edges of the second semiconductor layer,
wherein the conductive layer includes a first region overlapping with a channel formation region of the first transistor, a second region overlapping with a channel formation region of the second transistor, and a third region not overlapping with neither the channel formation region of the first transistor nor the channel formation region of the second transistor, and
wherein, in a second direction perpendicular to the first direction, a width of the conductive layer in the third region is broader than a width of the conductive layer in the first region and a width of the conductive layer in the second region.
5. The semiconductor device according to claim 4 , wherein the first direction is a direction in which the semiconductor device is bent.
6. An electronic device comprising the semiconductor device according to claim 4 .
7. A semiconductor device comprising:
a substrate;
a pixel portion over the substrate; and
a driver circuit portion over the substrate,
wherein the pixel portion comprises a light-emitting element,
wherein the driver circuit portion comprises:
a conductive layer;
a first semiconductor layer and a second semiconductor layer arranged in a first direction;
an insulating layer between the conductive layer and each of the first semiconductor layer and the second semiconductor layer;
a source electrode layer electrically connected to the first semiconductor layer and the second semiconductor layer; and
a drain electrode layer electrically connected to the first semiconductor layer and the second semiconductor layer,
wherein a part of the first semiconductor layer is included in a first transistor and a part of the second semiconductor layer is included in a second transistor,
wherein a part of the conductive layer is included in the first transistor and a part of the conductive layer is included in the second transistor,
wherein the conductive layer extends beyond both side edges of the first semiconductor layer in the first direction, the first direction being the same as a channel width direction of the first transistor,
wherein the conductive layer extends beyond both side edges of the second semiconductor layer in the first direction, a channel width direction of the second transistor being the same as the first direction,
wherein the source electrode layer extends beyond the both side edges of the first semiconductor layer,
wherein the source electrode layer extends beyond the both side edges of the second semiconductor layer,
wherein the drain electrode layer extends beyond the both side edges of the first semiconductor layer,
wherein the drain electrode layer extends beyond the both side edges of the second semiconductor layer,
wherein the conductive layer includes a first region overlapping with a channel formation region of the first transistor, a second region overlapping with a channel formation region of the second transistor, and a third region not overlapping with neither the channel formation region of the first transistor nor the channel formation region of the second transistor, and
wherein, in a second direction perpendicular to the first direction, a width of the conductive layer in the third region is broader than a width of the conductive layer in the first region and a width of the conductive layer in the second region.
8. The semiconductor device according to claim 7 , wherein the first direction is a direction in which the semiconductor device is bent.
9. The semiconductor device according to claim 7 , wherein the substrate is a flexible substrate.
10. An electronic device comprising the semiconductor device according to claim 7 .