Vertical-cavity surface-emitting laser
A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, a ring-shaped trench passing through the upper mirror, the aperture forming layer, and the active layer to define an isolation region therein, and a plurality of oxidation holes disposed in the isolation region surrounded by the trench, and passing through the upper mirror and the aperture forming layer.
1. A vertical-cavity surface-emitting laser (VCSEL), comprising:
a substrate;
a lower mirror;
an upper mirror;
an active layer interposed between the lower mirror and the upper mirror;
an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer;
a ring-shaped trench passing through the upper mirror, the aperture forming layer, and the active layer to define an isolation region therein;
an oxidation region disposed in the isolation region surrounded by the trench;
an upper insulation layer covering the oxidation region; and
an ohmic contact layer disposed between the upper mirror and the upper insulation layer; and
a connector disposed on the upper insulation layer and electrically connected to the ohmic contact layer,
wherein the upper insulation layer covers a part of the ohmic contact layer and includes at least one via hole exposing an upper surface of the ohmic contact layer,
wherein the connector substantially covers the entire at least one via hole,
wherein the connector includes a ring-shaped circular portion and a protrusion region protruding outwardly from the circular portion, and
wherein the oxidation region includes an oxidation hole disposed between the protrusion region and the substrate.
2. The VCSEL of claim 1 , wherein the trench passes through a partial thickness of the lower mirror.
3. The VCSEL of claim 1 , wherein the connector is partially incised.
4. The VCSEL of claim 1 , wherein the ohmic contact layer has a symmetrical structure, and includes a circular portion and protrusions protruding outwardly from the circular portion such that the protrusions are spaced apart at an equal interval from one another.
5. The VCSEL of claim 1 , wherein the oxidation hole has substantially an elliptic shape.
6. The VCSEL of claim 1 , wherein the oxidation hole has substantially a circular or a quadrangular shape.
7. The VCSEL of claim 1 , further comprising
a surface protection layer covering the ohmic contact layer and the upper mirror,
wherein:
the trench and the oxidation hole pass through the surface protection layer; and
the upper insulation layer covers the trench and the oxidation hole.
8. The VCSEL of claim 7 , wherein the via hole is formed in plural and are disposed to correspond to the protrusions.
9. The VCSEL of claim 8 , further comprising a pad,
wherein:
the pad is disposed outside of the trench; and
the connector extends from the pad.
10. A vertical-cavity surface-emitting laser (VCSEL) including an emitter array, comprising:
a substrate;
a lower mirror;
an upper mirror;
an active layer interposed between the lower mirror and the upper mirror;
an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer;
a ring-shaped trench passing through the upper mirror, the aperture forming layer, and the active layer to define an isolation region therein;
an oxidation region disposed in the isolation region surrounded by the trench;
an upper insulation layer covering the oxidation region; and
an ohmic contact layer disposed between the upper mirror and the upper insulation layer; and
a connector disposed on the upper insulation layer and electrically connected to the ohmic contact layer,
wherein:
the emitter array includes a plurality of emitters and is disposed in the isolation region surrounded by the trench;
the oxidation region is disposed to correspond to the emitters in the emitter array;
the upper insulation layer covers a part of the ohmic contact layer and includes at least one via hole exposing an upper surface of the ohmic contact layer;
the connector substantially covers the entire at least one via hole;
the connector includes a ring-shaped circular portion and a protrusion region protruding outwardly from the circular portion; and
the oxidation region includes an oxidation hole disposed between the protrusion region and the substrate.
11. The VCSEL of claim 10 , wherein the trench extends to a partial thickness of the lower mirror from the upper mirror.
12. The VCSEL of claim 10 , wherein the ohmic contact layer is formed in plural to correspond to each emitter.
13. The VCSEL of claim 12 , wherein the connector is partially incised.
14. The VCSEL of claim 12 , wherein the ohmic contact layer has a symmetrical structure, and includes a circular portion and protrusions protruding outwardly from the circular portion such that the protrusions are spaced apart at an equal interval from one another.
15. The VCSEL of claim 12 , further comprising a surface protection layer covering the ohmic contact layer and the upper mirror,
wherein:
the trench and the oxidation hole pass through the surface protection layer; and
the upper insulation layer covers the trench and the oxidation hole.
16. The VCSEL of claim 15 , wherein the via hole is formed in plural and are disposed to correspond to the protrusions.
17. The VCSEL of claim 16 , further comprising a pad,
wherein:
the pad is disposed outside of the trench; and
the connector extends from the pad.
18. The VCSEL of claim 17 , wherein the connector has a mesh shape including circular openings corresponding to each emitter.
19. The VCSEL of claim 12 , wherein the oxidation hole has at least one of an elliptic, a circular, and a quadrangular shape.