IP Library Granted Patent US 11,947,421
Granted Patent B2
US 11,947,421 · App. 17/958,920 · Granted Apr 2, 2024

Decreasing a quantity of queues to adjust a read throughput level for a data recovery operation

Inventors: Zhenming Zhou (San Jose, CA); Jian Huang (Union City, CA); Jiangli Zhu (San Jose, CA)
Assignee: Micron Technology, Inc.
G06F11/1068G06F3/0619G06F3/0659G06F3/0679G06F11/076G06F11/0772G06F11/1471G06F11/3037
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Quick Facts
Patent No.
US 11,947,421
App. No.
17/958,920
Granted
Apr 2, 2024
Kind
B2
Abstract

An error associated with a read operation corresponding to a memory die of a memory sub-system is detected. In response to detecting the error, a first read throughput level of the memory sub-system is identified. A quantity of queues receiving operation requests is decreased, the decreased quantity of queues corresponding to a second read throughput level. A read retry operation associated with the memory die is initiated at the second read throughput level.

Claims (33)

1. A method comprising:

detecting, by a processing device, an error associated with a read operation corresponding to one or more memory dies of a memory sub-system;

in response to detecting the error, identifying a first read throughput level of the memory sub-system;

establishing a decreased quantity of queues receiving one or more operation requests, wherein the decreased quantity of queues corresponds to a second read throughput level of the memory sub-system; and

initiating a read retry operation associated with a memory die at the second read throughput level.

2. The method of claim 1 , wherein the second read throughput level corresponds to a decreased depth of one or more queues receiving the one or more operation requests from a host system.

3. The method of claim 1 , wherein the decreased quantity of queues are available to receive the one or more operation requests from a host system.

4. The method of claim 1 , wherein the second read throughput level corresponds to an increase in a level of spacing between commands sent to the one or more memory dies of the memory sub-system.

5. The method of claim 1 , further comprising establishing the first read throughput level following completion of the read retry operation.

6. The method of claim 1 , wherein the first read throughput level is greater than a threshold throughput level.

7. The method of claim 1 , wherein execution of the read retry operation recovers data loss due to the error associated with the read operation corresponding to the one or more memory dies.

8. A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:

identifying a read error associated with a read operation of one or more memory dies of a memory sub-system;

executing an action to decrease a quantity of queues receiving one or more operation requests to decrease a read throughput level of the memory sub-system; and

executing a data recovery operation to recover data lost due to the read error.

9. The non-transitory computer readable medium of claim 8 , wherein the data recovery operation comprises a read retry operation.

10. The non-transitory computer readable medium of claim 8 , wherein the action further comprises decreasing a depth of one or more queues receiving the one or more operation requests from a host system.

11. The non-transitory computer readable medium of claim 10 , wherein the action further comprises increasing a number of clock cycles between commands sent to the one or more memory dies of the memory sub-system.

12. The non-transitory computer readable medium of claim 8 , the operations further comprising establishing an increased read throughput level of the memory sub-system following execution of the data recovery operation.

13. The non-transitory computer readable medium of claim 8 , wherein a read throughput level during the read operation of the one or more memory dies exceeds a threshold throughput level.

14. A system comprising:

a memory die; and

a processing device, operatively coupled with the memory die, to perform operations comprising:

detecting an error associated with a read operation corresponding to the memory die of a memory sub-system;

in response to the error, identifying a first read throughput level of the memory sub-system;

establishing a decreased quantity of queues receiving one or more operation requests, wherein the decreased quantity of queues corresponds to a second read throughput level of the memory sub-system; and

initiating a read retry operation associated with the memory die at the second read throughput level.

15. The system of claim 14 , wherein the second read throughput level corresponds to a decreased depth of one or more queues receiving the one or more operation requests from a host system.

16. The system of claim 14 , wherein the decreased quantity of queues are available to receive one or more operation requests from a host system.

17. The system of claim 14 , wherein the second read throughput level corresponds to an increase in a level of spacing between commands sent to one or more memory dies of the memory sub-system.

18. The system of claim 14 , the operations further comprising establishing the first read throughput level following completion of the read retry operation.

19. The system of claim 14 , wherein the first read throughput level is greater than a threshold throughput level.

20. The system of claim 14 , wherein execution of the read retry operation recovers data loss due to the error associated with the read operation corresponding to the memory die.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 13, 2023
From: ZHOU, ZHENMING; HUANG, JIAN; ZHU, JIANGLI
To: MICRON TECHNOLOGY, INC.
Reel/Frame 064248/0001 →
Continuity (2)
Continuation 16928710 · Jul 14, 2020
Related Publication 20230027144A1 · Jan 26, 2023