Light emitting element structure and method of fabricating a light emitting element

1. A method of fabricating a light-emitting element, the method comprising:

preparing a lower substrate, which includes a substrate and a separation layer on the substrate;

preparing at least one semiconductor rod on the separation layer;

forming a rod structure, which includes a rod protecting layer on the separation layer to surround the at least one semiconductor rod;

forming an auxiliary layer on at least part of the rod protecting layer;

separating the rod structure from the lower substrate by removing the separation layer; and

separating the at least one semiconductor rod from the rod structure.

2. The method of claim 1 , wherein, in the separating the rod structure, the separation layer is etched away by an etchant for separation, and

wherein the rod protecting layer does not react with the etchant for separation.

3. The method of claim 2 , wherein the etchant for separation includes a material containing fluorine (F), and

wherein the rod protecting layer includes an organic material that is insoluble in the etchant for separation.

4. The method of claim 3 , wherein the forming the rod structure comprises forming the rod protecting layer by coating the at least one semiconductor rod with the organic material.

5. The method of claim 4 , wherein the organic material of the rod protecting layer includes at least one of polymethyl methacrylate (PMMA), photoresist (PR), and poly-(3,4-ethylenedioxy thiophene)polystyrene sulfonate (PEDOT:PSS).

6. The method of claim 4 , wherein the separating the at least one semiconductor rod comprises removing the auxiliary layer from the rod protecting layer, dissolving the organic material of the rod protecting layer in a solvent, and removing the organic material dissolved in the solvent.

7. The method of claim 6 , wherein the removing the organic material dissolved in the solvent comprises thermally treating, and thereby evaporating, the organic material.

8. The method of claim 1 , wherein, in the preparing the at least one semiconductor rod, uneven patterns, including one or more grooves, which are parts of the separation layer that are depressed, and protrusions, which are formed due to the grooves being spaced apart from one another, are formed.

9. The method of claim 8 , wherein the forming the rod structure comprises forming the rod protecting layer to surround the protrusions of the separation layer and to be in contact with top surfaces of the grooves.

10. The method of claim 9 , wherein the at least one semiconductor rod is arranged in the rod protecting layer such that a first end portion of the at least one semiconductor rod faces a first surface of the rod protecting layer and a second end portion of the at least one semiconductor rod that is opposite to the first end portion of the at least one semiconductor rod faces a second surface of the rod protecting layer that is opposite to the first surface of the rod protecting layer.

11. The method of claim 10 , wherein the second end portion of the at least one semiconductor rod is in contact with the protrusions of the separation layer.

12. The method of claim 11 , wherein the at least one semiconductor rod is arranged in a direction perpendicular to the first surface of the rod protecting layer.

13. The method of claim 12 , wherein the at least one semiconductor rod includes a semiconductor crystal, which includes a first conductivity semiconductor, an active layer, and a second conductivity semiconductor having a different polarity from the first conductivity semiconductor, and an insulating film, which surrounds an outer circumferential surface of the semiconductor crystal.

14. The method of claim 11 , wherein the auxiliary layer is formed on the first surface faced by the first end portion of the at least one semiconductor rod.

15. A light-emitting element structure comprising:

an organic protective film including an organic material that is insoluble in an etchant containing fluorine (F);

at least one semiconductor rod disposed in the organic protective film and arranged to be spaced apart in a direction parallel to a first surface of the organic protective film; and

an auxiliary layer formed on at least part of the organic protective film,

wherein the organic material of the organic protective film includes at least one of polymethyl methacrylate (PMMA), photoresist (PR), and poly-(3,4-ethylenedioxy thiophene)polystyrene sulfonate (PEDOT:PSS).

16. The light-emitting element structure of claim 15 , wherein the first surface of the organic protective film is substantially flat, and

wherein a second surface of the organic protective film that is opposite to the first surface of the organic protective film, and on which the auxiliary layer is not formed, includes at least one depression, which is formed due to an area that overlaps with the at least one semiconductor rod being depressed.

17. The light-emitting element structure of claim 16 , wherein a long axis of the at least one semiconductor rod extends in a direction perpendicular to the first surface of the organic protective film.

18. The light-emitting element structure of claim 17 , wherein the at least one semiconductor rod is aligned such that first and second end portions of the at least one semiconductor rod face the first and second surfaces, respectively, of the organic protective film, and

wherein the second end portion of the at least one semiconductor rod is in part in contact with the at least one depression.

19. The light-emitting element structure of claim 18 , wherein the at least one semiconductor rod includes a semiconductor crystal, which includes a first conductivity semiconductor, a second conductivity semiconductor having a different polarity from the first conductivity semiconductor, and an active layer disposed between the first and second conductivity semiconductors, and

wherein the semiconductor crystal has a structure in which the first conductivity semiconductor, the active layer, and the second conductivity semiconductor are stacked in the direction in which the long axis of the at least one semiconductor rod extends.