Ceramic metal circuit board and semiconductor device using the same
According to one embodiment, a ceramic metal circuit board is a ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate. At least one of the metal circuit plates has an area of not less than 100 mm 2 and includes a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates. The concave portion is provided not less than 3 mm inside from an end of the metal circuit plate.
1. A ceramic metal circuit board formed by bonding metal circuit plates to at least one surface of a ceramic substrate, wherein at least one of the metal circuit plates has an area of not less than 100 mm 2 and comprises a concave portion having a depth of not less than 0.02 mm within a range of 1% to 70% of a surface of the at least one of the metal circuit plates, and the concave portion is provided not less than 3 mm inside from an end of the at least one of the metal circuit plates, and
wherein a sectional shape of the concave portion is at least one shape selected from a triangular shape or a shape with a convex portion formed at an inlet edge of the concave portion.
2. The ceramic metal circuit board according to claim 1 , wherein an area to provide the concave portion falls within a range of 3% to 70% of one metal circuit plate surface.
3. The ceramic metal circuit board according to claim 2 , wherein the area to provide the concave portion falls within a range of 30% to 95% of one metal circuit plate surface other than a semiconductor element mounting portion region and a terminal mounting portion region.
4. The ceramic metal circuit board according to claim 1 , wherein the depth of the concave portion falls within a range of 10% to 90% of a thickness of the metal circuit plate.
5. The ceramic metal circuit board according to claim 1 , wherein an average minimum diameter d (mm) or an average minimum groove width w of the concave portion viewed from an upper side falls within a range of 0.5 mm to 2 mm.
6. The ceramic metal circuit board according to claim 1 , wherein an average shortest distance p between concave portions is not less than d/2 (mm) or not less than w/2 (mm).
7. The ceramic metal circuit board according to claim 1 , wherein a thickness of the metal circuit plate is not less than 0.3 mm.
8. The ceramic metal circuit board according to claim 1 , wherein a surface size of the ceramic substrate is not less than 12 cm 2 .
9. The ceramic metal circuit board according to claim 1 , wherein the ceramic metal circuit board has a structure including a back metal plate provided on a side opposite to a surface of the ceramic substrate on which the at least one of the metal circuit plates is provided.
10. The ceramic metal circuit board according to claim 9 , wherein the ceramic metal circuit board has a structure including a concave portion provided in the back metal plate.
11. The ceramic metal circuit board according to claim 1 , wherein the ceramic substrate comprises a silicon nitride substrate.
12. The ceramic metal circuit board according to claim 1 , wherein at least a part of the surface of the ceramic substrate, which excludes a portion where the at least one of the metal circuit plates is provided, comprises a concave portion.
13. A semiconductor device including a semiconductor element provided on a metal circuit plate provided with a concave portion of the ceramic metal circuit board of claim 1 comprises a concave portion.
14. The semiconductor device according to claim 13 , wherein semiconductor elements are provided on the at least one of the metal circuit plates provided with the concave portion.
15. The semiconductor device according to claim 13 , wherein a junction temperature of the semiconductor element is not less than 170° C.
16. The semiconductor device according to claim 13 , wherein the semiconductor device is resin-molded.