Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device in which probes and the layout of the electrode pads of a test element group (TEG) are associated is provided. As a semiconductor device is miniaturized, a scribe area on a wafer also tends to decrease. Accordingly, it is necessary to reduce the size of a TEG arranged in the scribe area, and efficiently arrange an electrode pad for probe contact. Thus, it is necessary to associate the probes and the layout of the electrode pad. According to the method, a layout of a TEG electrode pad corresponding to a plurality of probes arranged in a fan shape or probes manufactured by Micro Electro Mechanical Systems (MEMS) technology is provided.
1. A method for manufacturing a semiconductor device, comprising:
forming a plurality of first groups of electrode pads in a first scribe area extending in a vertical direction, each of the first groups including a plurality of electrode pads and a semiconductor element, wherein all of the electrode pads and the semiconductor element of each of the first groups are arranged in a first straight line along a predetermined direction;
forming a plurality of second groups of electrode pads in a second scribe area extending in a horizontal direction, each of the second groups including a plurality of electrode pads and a semiconductor element, wherein all of the electrode pads and the semiconductor element of each of the second groups are arranged in a second straight line along the same direction as the predetermined direction;
contacting each probe of an array of probes with a corresponding one of the electrode pads in the first and second groups of electrode pads; and
inspecting electrical characteristics of the semiconductor element.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein
a material of a tip of the probe is the same type as one of materials used in a manufacturing process of the semiconductor wafer.
3. The method for manufacturing a semiconductor device according to claim 2 , wherein the material of the tip of the probe and the electrode pad group is tungsten.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor element is a transistor.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor element is an inverter.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein the array of probes is formed on a cantilever.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein the array of probes is arranged in a fan shape.