Gallium oxide single crystal particle and method for producing the same
A gallium oxide single crystal particle according to the present invention is an α-Ga 2 O 3 single crystal particle and has a diameter and a height that exceed 100 μm.
1. A gallium oxide single crystal particle being an α-Ga 2 O 3 single crystal particle,
the gallium oxide single crystal particle having a diameter and a height that exceed 100 μm,
wherein a Raman peak closest to a Raman shift of 690 cm −1 has a half-width of 20 cm −1 or less, and
wherein a surface of the gallium oxide single crystal particle has a surface roughness Ra of 100 nm or less.
2. The gallium oxide single crystal particle according to claim 1 ,
wherein a proportion of Ga atoms to O atoms is 0.70 to 1.00.
3. The gallium oxide single crystal particle according to claim 1 ,
wherein an X-ray rocking curve of at least one of (006) or (104) planes has a half-width of 300 arcsec or less.
4. The gallium oxide single crystal particle according to claim 1 ,
wherein a content of an alkali metal element is 1.2×10 15 to 1.0×10 18 atoms/cm 3 .
5. A method for producing the gallium oxide single crystal particle according to claim 1 , the method comprising:
bringing an aqueous solution including a Ga ion, the aqueous solution having a pH of 9.0 to 11.0, into a supercritical state having a temperature of 390° C. or more and a pressure of 22.1 MPa or more to form an α-Ga 2 O 3 single crystal particle having a diameter and a height that exceed 100 μm.
6. The method for producing a gallium oxide single crystal particle according to claim 5 ,
wherein gallium oxide hydroxide is added to the aqueous solution before the aqueous solution is brought into the supercritical state having a temperature of 390° C. or more and a pressure of 22.1 MPa or more.
7. The method for producing a gallium oxide single crystal particle according to claim 5 ,
wherein the aqueous solution includes an alkali metal element.