RF devices with enhanced performance and methods of forming the same
The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer formed from a strained silicon epitaxial layer, in which a lattice constant is greater than 5.461 at a temperature of 300K. The first mold compound resides over the active layer. Herein, silicon crystal does not exist between the first mold compound and the active layer. The multilayer redistribution structure includes a number of bump structures, which are at a bottom of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.
1. An apparatus comprising:
a mold device die comprising a device region, a passivation layer, and a first mold compound, wherein:
the device region includes a front-end-of-line (FEOL) portion and a back-end-of-line (BEOL) portion, wherein the FEOL portion comprises an active layer, a contact layer, and isolation sections;
a bottom surface of the active layer and a bottom surface of each isolation section are substantially coplanar and are in contact with a top surface of the contact layer, and the BEOL portion is underneath a bottom surface of the contact layer;
the isolation sections surround the active layer and extend vertically beyond a top surface of the active layer to define an opening within the isolation sections and over the active layer;
the active layer is formed from a strained silicon epitaxial layer, wherein a lattice constant of silicon is greater than 5.461 in the strained silicon epitaxial layer at a temperature of 300K;
the isolation sections consist of silicon dioxide;
the passivation layer resides over the top surface of the active layer and within the opening, wherein the passivation layer is formed of silicon dioxide, silicon nitride, or a combination of both; and
the first mold compound fills the opening and is in contact with the passivation layer, wherein silicon crystal, which has no germanium, nitrogen, or oxygen content, does not exist between the first mold compound and the active layer; and
a multilayer redistribution structure formed underneath the BEOL portion of the mold device die, wherein the multilayer redistribution structure comprises a plurality of bump structures, wherein the plurality of bump structures is on a bottom surface of the multilayer redistribution structure and electrically coupled to the FEOL portion of the mold device die.
2. The apparatus of claim 1 wherein:
the BEOL portion comprises connecting layers; and
the multilayer redistribution structure further comprises redistribution interconnections, wherein the plurality of bump structures is electrically coupled to the FEOL portion of the mold device die via the redistribution interconnections within the multilayer redistribution structure and the connecting layers within the BEOL portion.
3. The apparatus of claim 1 wherein a portion of the first mold compound resides over the isolation sections.
4. The apparatus of claim 1 wherein the first mold compound has a thermal conductivity between 1 W/m·K and 100 W/m·K.
5. The apparatus of claim 1 wherein the first mold compound has a dielectric constant less than 8.
6. The apparatus of claim 1 wherein the first mold compound has a dielectric constant between 3 and 5.
7. The apparatus of claim 1 wherein the FEOL portion is configured to provide at least one of a switch field-effect transistor (FET), a diode, a capacitor, a resistor, or an inductor.
8. The apparatus of claim 1 wherein the active layer of the FEOL portion includes a source, a drain, and a channel between the source and the drain, while the contact layer of the FEOL portion includes a gate structure that extends horizontally underneath the channel.
9. An apparatus comprising:
a mold device die comprising a device region, a passivation layer, and a first mold compound, wherein:
the device region includes a front-end-of-line (FEOL) portion and a back-end-of-line (BEOL) portion, wherein the FEOL portion comprises an active layer, a contact layer, and isolation sections;
a bottom surface of the active layer and a bottom surface of each isolation section are substantially coplanar and are in contact with a top surface of the contact layer, and the BEOL portion is underneath a bottom surface of the contact layer;
the isolation sections surround the active layer and extend vertically beyond a top surface of the active layer to define an opening within the isolation sections and over the active layer;
the active layer is formed from a strained silicon epitaxial layer, wherein a lattice constant of silicon is greater than 5.461 in the strained silicon epitaxial layer at a temperature of 300K;
the isolation sections consist of silicon dioxide;
the passivation layer resides over the top surface of the active layer and within the opening, wherein the passivation layer is formed of silicon dioxide, silicon nitride, or a combination of both; and
the first mold compound fills the opening and is in contact with the passivation layer, wherein silicon crystal, which has no germanium, nitrogen, or oxygen content, does not exist between the first mold compound and the active layer;
a multilayer redistribution structure formed underneath the BEOL portion of the mold device die, wherein:
the multilayer redistribution structure extends horizontally beyond the mold device die; and
the multilayer redistribution structure comprises a plurality of bump structures, wherein the plurality of bump structures is on a bottom surface of the multilayer redistribution structure, and electrically coupled to the FEOL portion of the mold device die; and
a second mold compound residing over the multilayer redistribution structure to encapsulate the mold device die.
10. The apparatus of claim 9 wherein the first mold compound is formed from a same material as the second mold compound.
11. The apparatus of claim 9 wherein the first mold compound and the second mold compound are formed from different materials.
12. The apparatus of claim 9 wherein:
the BEOL portion comprises connecting layers; and
the multilayer redistribution structure further comprises redistribution interconnections, wherein the plurality of bump structures is electrically coupled to the FEOL portion of the mold device die via the redistribution interconnections within the multilayer redistribution structure and the connecting layers within the BEOL portion.
13. The apparatus of claim 9 wherein a portion of the first mold compound resides over the isolation sections.
14. The apparatus of claim 9 wherein the first mold compound has a thermal conductivity between 1 W/m·K and 100 W/m·K.
15. The apparatus of claim 9 wherein the first mold compound has a dielectric constant less than 8.
16. The apparatus of claim 9 wherein the first mold compound has a dielectric constant between 3 and 5.
17. The apparatus of claim 9 wherein the FEOL portion is configured to provide at least one of a switch field-effect transistor (FET), a diode, a capacitor, a resistor, or an inductor.
18. The apparatus of claim 9 wherein the active layer of the FEOL portion includes a source, a drain, and a channel between the source and the drain, while the contact layer of the FEOL portion includes a gate structure that extends horizontally underneath the channel.