Imaging element and imaging device including an organic semiconductor material
An imaging element according to an embodiment of the present disclosure includes: a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region; an organic photoelectric converter including a first electrode, a second electrode, a charge accumulation layer, and an organic photoelectric conversion layer, the first electrode being provided on a light receiving surface of the semiconductor substrate and including a plurality of electrodes, the second electrode being opposed to the first electrode, the charge accumulation layer and the organic photoelectric conversion layer being stacked in this order between the first electrode and the second electrode and extending over the effective pixel region; and a first hydrogen-blocking layer that covers above the organic photoelectric conversion layer, a side surface of the organic photoelectric conversion layer, and a side surface of the charge accumulation layer.
1. An imaging element, comprising:
a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region;
an organic photoelectric converter including a first electrode, a second electrode, a charge accumulation layer, and an organic photoelectric conversion layer, the first electrode being provided on a light receiving surface of the semiconductor substrate and including a plurality of electrodes, the second electrode being opposed to the first electrode, the charge accumulation layer and the organic photoelectric conversion layer being stacked in this order between the first electrode and the second electrode and extending over the effective pixel region; and
a first hydrogen-blocking layer including a top first hydrogen-blocking layer and a bottom first hydrogen-blocking layer that covers above the organic photoelectric conversion layer,
wherein the top first hydrogen-blocking layer covers a side surface of the organic photoelectric conversion layer, and a side surface of the charge accumulation layer, and
wherein the top first hydrogen-blocking layer has a thickness greater than a thickness of the bottom first hydrogen-blocking layer.
2. The imaging element according to claim 1 , further comprising a second hydrogen-blocking layer below the charge accumulation layer.
3. The imaging element according to claim 2 , wherein the second hydrogen-blocking layer is provided between the semiconductor substrate and the charge accumulation layer.
4. The imaging element according to claim 2 , wherein
the organic photoelectric converter further includes an insulating layer between the first electrode and the charge accumulation layer, and
the insulating layer is formed as the second hydrogen-blocking layer.
5. The imaging element according to claim 4 , wherein the second hydrogen-blocking layer is in contact with the first hydrogen-blocking layer in the peripheral region.
6. The imaging element according to claim 2 , wherein the first hydrogen-blocking layer and the second hydrogen-blocking layer are each formed by using an insulating material.
7. The imaging element according to claim 2 , wherein the first hydrogen-blocking layer and the second hydrogen-blocking layer are each formed by including a metal oxide having light transmissivity.
8. The imaging element according to claim 2 , wherein the first hydrogen-blocking layer and the second hydrogen-blocking layer each include a single layer or a plurality of layers.
9. The imaging element according to claim 2 , wherein the first hydrogen-blocking layer and the second hydrogen-blocking layer are each an aluminum oxide (AlO x ) film or a carbon-containing silicon oxide film (SiOC) film.
10. The imaging element according to claim 1 , further comprising:
a first protective layer; and
a second protective layer,
wherein the first hydrogen-blocking layer, the first protective layer, and the second protective layer are stacked in this order.
11. The imaging element according to claim 10 , wherein the first protective layer and the second protective layer are each formed by using an insulating material.
12. The imaging element according to claim 10 , wherein the first protective layer and the second protective layer are each formed by including a metal oxide having light transmissivity.
13. The imaging element according to claim 10 , wherein the first protective layer and the second protective layer each include a single layer or a plurality of layers.
14. The imaging element according to claim 10 , wherein the first protective layer and the second protective layer are each a single-layer film including one of an aluminum oxide (AlO x ) film, a silicon nitride (SiN x ) film, a carbon-containing silicon oxide (SiOC) film, a silicon oxide (SiO x ) film, and a silicon oxynitride (SiO x N y ) film, or a stacked film including two or more thereof.
15. The imaging element according to claim 10 , further comprising:
a pad section; and
a wiring line that couples the second electrode to the pad section,
wherein the second protective layer is provided at least over a coupling section between the second electrode and the wiring line and over a coupling section between the pad section and the wiring line.
16. The imaging element according to claim 1 , wherein
the organic photoelectric converter further includes an insulating layer between the first electrode and the charge accumulation layer, and
the insulating layer includes an opening on one electrode out of the plurality of electrodes included in the first electrode, and the one electrode and the charge accumulation layer are electrically coupled to each other via the opening.
17. The imaging element according to claim 1 , wherein the semiconductor substrate has an inorganic photoelectric converter embedded therein.
18. An imaging device, comprising:
an imaging element, the imaging element including:
a semiconductor substrate having an effective pixel region in which a plurality of pixels is disposed and a peripheral region provided around the effective pixel region;
an organic photoelectric converter including a first electrode, a second electrode, a charge accumulation layer, and an organic photoelectric conversion layer, the first electrode being provided on a light receiving surface of the semiconductor substrate and including a plurality of electrodes, the second electrode being opposed to the first electrode, the charge accumulation layer and the organic photoelectric conversion layer being stacked in this order between the first electrode and the second electrode and extending over the effective pixel region; and
a first hydrogen-blocking layer including a top first hydrogen-blocking layer and a bottom first hydrogen-blocking layer that covers above the organic photoelectric conversion layer,
wherein the top first hydrogen-blocking layer covers a side surface of the organic photoelectric conversion layer, and a side surface of the charge accumulation layer, and
wherein the top first hydrogen-blocking layer has a thickness greater than a thickness of the bottom first hydrogen-blocking layer.
19. The imaging device according to claim 18 , further comprising a second hydrogen-blocking layer below the charge accumulation layer.
20. The imaging device according to claim 19 , wherein the first hydrogen-blocking layer and the second hydrogen-blocking layer are each an aluminum oxide (AlO x ) film or a carbon-containing silicon oxide film (SiOC) film.