Pulsed micro-chip laser for malaria detection
A laser suitable for use under field conditions to generate pulsed laser for detecting malaria using transient vapor nanobubbles can include a frequency doubled passively Q-switched microchip laser. The passively Q-switched microchip lasers can include suppression techniques for the unwanted fundamental wavelength in addition to using anti-reflective coatings. The pulsed laser disclosed herein can generate pulses with a high peak power as a result of high energy in conjunction with short pulse duration in the range of hundreds of picoseconds. The high peak power can be enough to generate the photo-thermal transient vapor nanobubbles for malaria detection and/or treatment.
1. A passively Q-switched microchip laser configured for generating transient vapor nanobubbles around malaria-specific nanoparticles in a human, the laser comprising:
a laser cavity bound by a reflector and an optical coupler;
a gain element located in the laser cavity, the gain element having a first axis, a first gain element surface, and a second gain element surface, the first gain element surface being adjacent to one of the reflector or the optical coupler;
a saturable absorber element in the laser cavity, the saturable absorber element having a second axis, a first saturable absorber element surface, and a second saturable absorber element surface, the first saturable absorber element surface being adjacent to another one of the reflector or the optical coupler,
wherein, in response to pumping energy at a predetermined pumping wavelength, the gain element is configured to produce simulated emission of at least a first wavelength and a second wavelength, wherein a simulated emission cross-section of the second wavelength is greater than a simulated emission cross-section of the first wavelength, wherein the second wavelength is a fundamental wavelength,
wherein the passively Q-switched microchip laser further comprises one or more fundamental wavelength suppression features such that the saturable absorber element is configured to output a pulsed laser beam substantially of the first wavelength.
2. The laser of claim 1 , wherein the pulsed laser beam has a duration less than about 300 picoseconds.
3. The laser of claim 1 , wherein the pulsed laser beam has an energy of at least about 20 microjoule.
4. The laser of claim 1 , wherein the pumping wavelength is between 670 nm to 675 nm.
5. The laser of claim 1 , wherein the one or more fundamental wavelength suppression features comprise the second gain element surface being at an angle to the first axis.
6. The laser of claim 5 , wherein the one or more fundamental wavelength suppression features further comprise the second saturable absorber element surface being at an angle to the second axis.
7. The laser of claim 1 , wherein the first and second axes are substantially collinear.
8. The laser of claim 1 , wherein the first and second axes are offset from each other.
9. The laser of claim 1 , wherein the second gain element surface and the second saturable absorber element surface are generally parallel.
10. The laser of claim 1 , wherein the first axis is at an angle with the second axis.
11. The laser of claim 1 , wherein the second gain element surface and the second saturable absorber element surface are at an angle with each other.
12. The laser of claim 1 , wherein the one or more fundamental wavelength suppression features comprise an exo-cavity element.
13. The laser of claim 12 , wherein the exo-cavity element is located on an opposite side of the gain element from a pump, the exo-cavity element configured to reflect back pump radiation into the cavity.
14. The laser of claim 12 , wherein the exo-cavity element is located next to the first gain element surface and substantially collinear with an optical axis of the laser cavity, the exo-cavity element configured to isolate feedback of a first wavelength from pump shaping optics.
15. The laser of claim 12 , further comprising an intra-cavity element between the gain element and the saturable absorber element, the intra-cavity element configured to focus pump radiation into the gain element.
16. The laser of claim 1 , wherein the first gain element surface is perpendicular to the first axis.
17. The laser of claim 1 , wherein the first saturable absorber element surface is perpendicular to the second axis.
18. A laser generator device outputting laser pulse(s) configured to generate transient vapor nanobubbles around malaria-specific nanoparticles in a human or ex vivo, the device comprising:
the passively Q-switched microchip laser of claim 1 ;
a laser pump coupled to the passively Q-switched microchip laser via a pump fiber; and
an output fiber coupling the passively Q-switched microchip laser and one or more malaria detection sensors.
19. The laser generator device of claim 18 , further comprising second harmonic generation and filtering elements coupling the passively Q-switched microchip laser to the output fiber.
20. The laser generator device of claim 18 , wherein the device is configured to sequentially switch the outputted pulsed laser beam among a plurality of optical fibers in the one or more malaria detection sensors.