Laser dicing system and method for dicing semiconductor structure including cutting street
A laser dicing system is disclosed. The laser dicing system includes a host device and a laser source. The host device reads and identifies a mark formed on a surface of a semiconductor structure. The laser source is coupled to the host device and is configured to generate a dicing laser energy to form a trench on the semiconductor structure. The dicing laser energy irradiated on the semiconductor structure is adjustable based on information embedded in the mark.
1. A laser dicing system, comprising:
a host device configured to read and identify a mark formed on a surface of a semiconductor structure; and
a laser source coupled to the host device and configured to generate a dicing laser energy to form a trench on the semiconductor structure,
wherein:
the dicing laser energy irradiated on the semiconductor structure is adjustable based on information embedded in the mark; and
in response to the laser source being focused on a first position different from a second position, the dicing laser energy irradiated on the semiconductor structure is reduced, the first position and the second position being located within a cutting street of the semiconductor structure.
2. The laser dicing system of claim 1 , wherein the information embedded in the mark comprises a material category of a corresponding position on the semiconductor structure.
3. The laser dicing system of claim 2 , wherein the host device comprises:
an image capture unit configured to read the mark formed on the surface of the semiconductor structure; and
an image identification unit configured to identify the information embedded in the mark indicating the material category of the corresponding position on the semiconductor structure, and provide the information to the laser source.
4. The laser dicing system of claim 3 , wherein the host device further comprises:
a laser energy adjusting unit movably provided on a laser light path between the laser source and the semiconductor structure based on the information identified by the image identification unit,
wherein the laser energy adjusting unit is moved to the laser light path between the laser source and the semiconductor structure when the laser source is focused on the first position on the semiconductor structure, and the first position is indicated by the information that has a first material category.
5. The laser dicing system of claim 4 , wherein the host device further comprises:
a positioning unit receiving a comment from the host device to move the laser energy adjusting unit to the laser light path and move the laser energy adjusting unit away from the laser light path based on the information identified by the image identification unit.
6. The laser dicing system of claim 1 , further comprising:
a laser energy adjusting unit coupled to the host device and movably provided on a laser light path between the laser source and the semiconductor structure,
wherein the laser energy adjusting unit is moved to the laser light path between the laser source and the semiconductor structure when the laser source is focused on the first position on the semiconductor structure, and the first position is indicated by the information that has a first material category.
7. The laser dicing system of claim 6 , wherein the laser energy adjusting unit is moved away from the laser light path when the laser source is focused on the second position on the semiconductor structure, and the second position is indicated by the information that has a second material category.
8. The laser dicing system of claim 7 , wherein the first position and the second position are located along the cutting street on the semiconductor structure.
9. The laser dicing system of claim 6 , further comprising:
a positioning unit coupled to the host device and configured to move the laser energy adjusting unit to the laser light path and move the laser energy adjusting unit away from the laser light path.
10. A laser dicing system, comprising:
a host device storing information indicating a material category of a corresponding position on a semiconductor structure; and
a laser source coupled to the host device and configured to generate a dicing laser energy to form a trench on the semiconductor structure,
wherein:
the dicing laser energy irradiated on the semiconductor structure is adjustable based on the information indicating the material category of the corresponding position on the semiconductor structure; and
in response to the laser source being focused on a first position different from a second position, the dicing laser energy irradiated on the semiconductor structure is reduced, the first position and the second position being located within a cutting street of the semiconductor structure.
11. The laser dicing system of claim 10 , wherein the information indicating the material category of the corresponding position on the semiconductor structure comprises a position of the cutting street on the semiconductor structure, the material category along the cutting street, a material density of each material of the material category, or a laser energy for dicing each material of the material category.
12. The laser dicing system of claim 10 , wherein the host device reads and identifies a mark formed on a surface of the semiconductor structure, and provides the information indicating the material category of the corresponding position on the semiconductor structure to the laser source.
13. The laser dicing system of claim 10 , wherein the host device comprises:
an image capture unit configured to read a mark formed on a surface of the semiconductor structure; and
an image identification unit configured to identify the information embedded in the mark indicating the material category of the corresponding position on the semiconductor structure, and provide the information to the laser source.
14. The laser dicing system of claim 13 , wherein the host device further comprises:
a laser energy adjusting unit movably provided on a laser light path between the laser source and the semiconductor structure based on the information identified by the image identification unit,
wherein the laser energy adjusting unit is moved to the laser light path between the laser source and the semiconductor structure when the laser source is focused on the first position on the semiconductor structure, and the first position is indicated by the information that has a first material category.
15. The laser dicing system of claim 14 , wherein the host device further comprises:
a positioning unit receiving a comment from the host device to move the laser energy adjusting unit to the laser light path and move the laser energy adjusting unit away from the laser light path based on the information identified by the image identification unit.
16. The laser dicing system of claim 10 , further comprising:
a laser energy adjusting unit coupled to the host device and movably provided on a laser light path between the laser source and the semiconductor structure,
wherein the laser energy adjusting unit is moved to the laser light path between the laser source and the semiconductor structure when the laser source is focused on the first position on the semiconductor structure, and the first position is indicated by the information that has a first material category.
17. The laser dicing system of claim 16 , wherein the laser energy adjusting unit is moved away from the laser light path when the laser source is focused on the second position on the semiconductor structure, and the second position is indicated by the information that has a second material category.
18. The laser dicing system of claim 17 , wherein the first position and the second position are located along a cutting street on the semiconductor structure.
19. The laser dicing system of claim 16 , further comprising:
a positioning unit coupled to the host device and configured to move the laser energy adjusting unit to the laser light path and move the laser energy adjusting unit away from the laser light path.
20. A laser dicing system, comprising:
a host device configured to read and identify a first mark and a second mark formed within a cutting street on a surface of a semiconductor structure; and
a laser source coupled to the host device and configured to generate a dicing laser energy to form a trench on the semiconductor structure,
wherein in response to the laser source being focused on a first position corresponding to the first mark, different from a second position corresponding to the second mark, a dicing laser energy irradiated on the semiconductor structure is reduced.