Forward looking algorithm for vertical integrated cross-point array memory

1. A method for reading a memory array having a first and second plurality of cells, the method comprising:

applying a first ramping voltage with a first predetermined increment for each of a plurality of ramping steps of the first ramping voltage to read the first plurality of cells;

counting, among the first plurality of cells at each ramping step of the first ramping voltage, a first number of cells at a logic 1 state;

comparing the first number with a first predetermined threshold at each ramping step of the first ramping voltage;

determining a first voltage reached by the first ramping voltage, at the first voltage the first number becoming equal to or higher than the first predetermined threshold;

applying a second voltage to read the second plurality of cells, the second voltage being lower than the first voltage by a first predetermined amount; and

applying a second ramping voltage ramping up from the second voltage with a second predetermined increment for each ramping step to read the second plurality of cells, the second predetermined increment being lower than the first predetermined increment by a second predetermined amount.

2. The method of claim 1 , wherein the first plurality of cells are known pattern cells and the second plurality of cells are data cells.

3. The method of claim 1 , further comprising applying a third ramping voltage ramping up to the second voltage to read the second plurality of cells, the third ramping voltage using the first predetermined increment for each ramping step.

4. The method of claim 3 , further comprising:

counting, among the second plurality of cells at each ramping step of the third ramping voltage, a second number of cells at a logic 1 state;

comparing the second number with a second predetermined threshold; and

determining the first voltage when both a first and second condition are satisfied for a first time, the first condition being the first number becoming equal to or higher than the first predetermined threshold, and the second condition being the second number becoming higher than the second predetermined threshold.

5. The method of claim 1 , further comprising:

counting, among the second plurality of cells at a first step of the second ramping voltage, a third number of cells at the logic 1 state;

counting, among the second plurality of cells at a second step of the second ramping voltage, a fourth number of cells at the logic 1 state, the second step immediately following the first step;

calculating a difference between the third number and the fourth number; and

stopping the second ramping voltage when an absolute value of the difference is smaller than a third predetermined threshold.

6. The method of claim 5 , further comprising providing the stopping voltage of the second ramping voltage to a sense amplifier.

7. The method of claim 5 , further comprising:

adding a pulsed voltage to the stopping voltage of the second ramping voltage to read the second plurality of cells; and

counting, among the second plurality of cells, a fifth number of cells at the logic 1 state.

8. The method of claim 1 , further comprising:

reading a third plurality of cells located adjacent the first and second plurality of cells; and

stopping the first ramping voltage when a number of cells at a logic 0 state among the third plurality of cells exceeds a fourth predetermined threshold.

9. The method of claim 8 , wherein the third plurality of cells reflects page erase status.

10. The method of claim 1 , further comprising stopping the second ramping voltage when a predetermined number of steps in the second ramping voltage is reached.

11. A memory device comprising:

a memory array having a first and second plurality of cells;

a controller configured to:

apply a first ramping voltage with a first predetermined increment for each of a plurality of ramping steps of the first ramping voltage to read the first plurality of cells;

count, among the first plurality of cells at each ramping step of the first ramping voltage, a first number of cells at a logic 1 state;

compare the first number with a first predetermined threshold at each ramping step of the first ramping voltage;

determine a first voltage reached by the first ramping voltage, at the first voltage the first number becoming equal to or higher than the first predetermined threshold;

apply a second voltage to read the second plurality of cells, the second voltage being lower than the first voltage by a first predetermined amount; and

apply a second ramping voltage ramping up from the second voltage with a second predetermined increment for each ramping step to read the second plurality of cells, the second predetermined increment being lower than the first predetermined increment by a second predetermined amount.

12. The memory device of claim 11 , wherein the first plurality of cells are known pattern cells and the second plurality of cells are data cells.

13. The memory device of claim 11 , wherein the controller is further configured to apply a third ramping voltage ramping up to the second voltage to read the second plurality of cells, the third ramping voltage using the first predetermined increment for each ramping step.

14. The memory device of claim 13 , wherein the controller is further configured to:

count, among the second plurality of cells at each ramping step of the third ramping voltage, a second number of cells at a logic 1 state;

compare the second number with a second predetermined threshold at each ramping step; and

determine the first voltage when both a first and second condition are satisfied for a first time, the first condition being the first number becoming equal to or higher than the first predetermined threshold, and the second condition being the second number becoming higher than the second predetermined threshold.

15. The memory device of claim 11 , wherein the controller is further configured to:

count, among the second plurality of cells at a first step of the second ramping voltage, a third number of cells at the logic 1 state;

count, among the second plurality of cells at a second step of the second ramping voltage, a fourth number of cells at the logic 1 state, the second step following the first step;

calculate a difference between the third number and the fourth number; and

stop the second ramping voltage when an absolute value of the difference is smaller than a third predetermined threshold.

16. The memory device of claim 15 , wherein the controller is further configured to:

add a pulsed voltage to the stopping voltage of the second ramping voltage to read the second plurality of cells; and

count, among the second plurality of cells, a fifth number of cells at the logic 1 state.

17. The memory device of claim 11 , the controller is further configured to:

read a third plurality of cells located adjacent the first and second plurality of cells; and

stop the first ramping voltage when a number of cells at a logic 0 state among the third plurality of cells exceeds a fourth predetermined threshold.

18. The memory device of claim 17 , wherein the third plurality of cells reflects page erase status.

19. The memory device of claim 11 , wherein the controller is further configured to stop the second ramping voltage when a predetermined number of steps in the second ramping voltage is reached.

20. A method for reading a memory array, the method comprising:

simultaneously applying a first voltage and second voltage to read a first and second plurality of memory cells, respectively, the first voltage being higher than the second voltage by a first predetermined amount, the first plurality of memory cells having a known pattern;

counting a first number of cells turned to a logic 1 state in the first plurality of memory cells; and

subsequently applying a third voltage to read the second plurality of memory cells in response to the counting, wherein the third voltage is higher than the first voltage by either a second predetermined amount or a third predetermined amount lower than the second predetermined amount, wherein the second predetermined amount is chosen when the first number is lower than a first predetermined threshold, and the third predetermined amount is chosen when the first number is equal to or higher than the first predetermined threshold.