IP Library Granted Patent US 12,148,596
Granted Patent B2
US 12,148,596 · App. 18/086,396 · Granted Nov 19, 2024

High-frequency power supply device

Inventors: Yuichi Hasegawa (Osaka, JP); Yuya Ueno (Osaka, JP)
Assignee: DAIHEN Corporation
H01J37/32183H01J37/32165
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Quick Facts
Patent No.
US 12,148,596
App. No.
18/086,396
Granted
Nov 19, 2024
Kind
B2
Abstract

A high-frequency power supply device includes: a first power supply that supplies first high-frequency power to a load by outputting a first high-frequency voltage having a first fundamental frequency; a second power supply that supplies second high-frequency power to the load by outputting a second high-frequency voltage having a second fundamental frequency lower than the first fundamental frequency; a first matching unit that performs a first matching operation of matching an impedance of the first power supply with an impedance of the load in a state in which intermodulation distortion caused by the first high-frequency power and the second high-frequency power being simultaneously supplied to the load, occurs. The first power supply frequency-modulates the first high-frequency voltage with a modulation signal having a same frequency as the second fundamental frequency to output a modulated wave after the first matching operation is completed.

Claims (19)

1. A high-frequency power supply device comprising:

a first power supply that supplies first high-frequency power to a load by outputting a first high-frequency voltage having a first fundamental frequency;

a second power supply that supplies second high-frequency power to the load by outputting a second high-frequency voltage having a second fundamental frequency lower than the first fundamental frequency;

a first matching unit connected between the first power supply and the load; and

a second matching unit connected between the second power supply and the load, wherein

the first matching unit performs a first matching operation of matching an impedance of the first power supply with an impedance of the load in a state in which intermodulation distortion occurs, the intermodulation distortion being caused by the first high-frequency power and the second high-frequency power being simultaneously supplied to the load, and

the first power supply performs frequency modulation control of frequency-modulating the first high-frequency voltage with a modulation signal having a same frequency as the second fundamental frequency and outputting it as a modulated wave after the first matching operation is completed.

2. The high-frequency power supply device according to claim 1 , wherein

the first matching unit performs a second matching operation of matching the impedance of the first power supply with the impedance of the load after the frequency modulation control is completed.

3. The high-frequency power supply device according to claim 2 , wherein

the second matching unit performs a third matching operation of matching an impedance of the second power supply with the impedance of the load, and

the first power supply performs the frequency modulation control after the first matching operation and the third matching operation are completed.

4. The high-frequency power supply device according to claim 1 , wherein

the second matching unit performs a third matching operation of matching the impedance of the second power supply with the impedance of the load,

the first matching unit has a function of computing magnitude of reflection coefficient or magnitude of reflected power, based on information detected in the first matching unit, and considers that the first matching operation is completed when the magnitude of the reflection coefficient or the magnitude of the reflected wave power computed becomes equal to or less than a predetermined threshold value, and

the second matching unit has a function of computing magnitude of reflection coefficient or magnitude of reflected wave power, based on information detected in the second matching unit, and considers that the third matching operation is completed when the magnitude of the reflection coefficient or the magnitude of the reflected wave power computed becomes equal to or less than a predetermined threshold value.

5. The high-frequency power supply device according to claim 1 , wherein

the first power supply has a function of computing magnitude of reflection coefficient or magnitude of reflected wave power, based on information detected in the first power supply, and

the frequency modulation control adjusts a start phase of the modulation signal and a frequency shift amount of the modulated wave within predetermined adjustment ranges, and considers that the frequency modulation control is completed when the magnitude of the reflection coefficient or the magnitude of reflected wave power computed is considered to be minimized.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2023
From: HASEGAWA, YUICHI; UENO, YUYA
To: DAIHEN CORPORATION
Reel/Frame 062592/0272 →
Priority Claims (1)
JP 2021-214971 · Dec 28, 2021 · national
Continuity (1)
Related Publication 20230207270A1 · Jun 29, 2023
Cited By (1)
US 12,289,039