Photoelectric conversion element, measuring method of the same, solid-state imaging device, electronic device, and solar cell
Provided is a photoelectric conversion element includes two electrodes forming a positive electrode and a negative electrode, at least one charge blocking layer arranged between the two electrodes, and a photoelectric conversion layer arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer or a hole blocking layer, and a potential of the charge blocking layer is bent.
1. A photoelectric conversion element, comprising:
a positive electrode;
a negative electrode;
at least one charge blocking layer between the positive electrode and the negative electrode; and
a photoelectric conversion layer between the positive electrode and the negative electrode, wherein
when the at least one charge blocking layer is an electron blocking layer,
a plurality of positions X1, X2, and X3 are in the electron blocking layer,
the position X1 is closest to the negative electrode among the plurality of positions X1, X2, and X3,
the position X3 is closest to the photoelectric conversion layer among the plurality of positions X1, X2, and X3,
the position X2 is between the position X1 and the position X3,
an electron affinity (Ea) of the electron blocking layer at the position X2 is smaller than an electron affinity (Ea) of the electron blocking layer at the position X1 and an electron affinity (Ea) of the electron blocking layer at the position X3, and
the electron blocking layer comprises a first semiconductor material each of the plurality of positions X1, X2, and X3, and
when the at least one charge blocking layer is a hole blocking layer,
a plurality of positions X1′, X2′, and X3′ are located in the hole blocking layer,
the position X1′ is closest to the positive electrode among the plurality of positions X1′, X2′, and X3′,
the position X3′ is closest to the photoelectric conversion layer among the plurality of positions X1′, X2′, and X3′,
X2′ is between the position X1′ and the position X3′,
an ionization potential (Ip) of the hole blocking layer at the position X2′ is larger than an ionization potential (Ip) of the hole blocking layer at the position X1′ and an ionization potential (Ip) of the hole blocking layer at the position X3′, and
the hole blocking layer comprises a second semiconductor material each of the plurality of positions X1′, X2′, and X3′.