Quantum dots, production method thereof, and composite and electronic device including the same
A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
1. A quantum dot, comprising
a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core,
wherein the quantum dot does not comprise cadmium,
the core comprises a Group III-V compound comprising a Group III metal and a Group V element,
the quantum dot has a maximum photoluminescence peak in a green light wavelength region,
a full width at half maximum of the maximum photoluminescence peak is less than about 50 nanometers,
a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers,
wherein in the quantum dot, a mole ratio of selenium to sulfur (Se:S) is greater than or equal to about 0.80:1 and less than or equal to 1.30:1,
wherein in the quantum dot a mole ratio of phosphorus to indium is greater than or equal to about 0.6:1 and less than or equal to about 0.9:1.
2. The quantum dot of claim 1 , wherein the green light wavelength region is greater than or equal to about 500 nanometers and less than or equal to about 560 nanometers, and wherein the full width at half maximum of the maximum photoluminescence peak is less than or equal to about 35 nanometers.
3. The quantum dot of claim 1 , wherein in the quantum dot, a mole ratio of selenium to sulfur (Se:S) is greater than or equal to about 0.85:1 and less than or equal to 1.30:1.
4. The quantum dot of claim 1 , wherein the Group V element does not comprise arsenic, antimony, or a combination thereof.
5. The quantum dot of claim 1 , wherein in the quantum dot a mole ratio of phosphorus to indium is greater than or equal to about 0.65:1 and less than or equal to about 0.8:1 and the Group V element does not comprise arsenic, antimony, or a combination thereof.
6. The quantum dot of claim 1 , wherein in the quantum dot,
a mole ratio of sulfur and selenium relative to indium ((S+Se)/In) is greater than or equal to about 20:1 and less than or equal to about 36:1; and
a mole ratio of zinc relative to indium is greater than or equal to about 25:1 and less than or equal to about 40:1.
7. The quantum dot of claim 1 , wherein the quantum dot has a size of greater than or equal to about 5 nanometers and less than or equal to about 8 nanometers.
8. The quantum dot of claim 1 , wherein the quantum dot has quantum efficiency of greater than or equal to about 80%.
9. The quantum dot of claim 1 , wherein the green light wavelength region is greater than or equal to about 510 nanometers and less than or equal to 536 nanometers.
10. A quantum dot polymer composite comprising a polymer matrix and the quantum dot of claim 1 , wherein the quantum dot polymer composite is configured to emit light and a full width at half maximum of a luminescent peak of the light is less than or equal to about 38 nm.
11. The quantum dot polymer composite of claim 10 , wherein the quantum dot polymer composite is configured to emit light having Cy of greater than or equal to about 0.23 and less than or equal to about 0.24 and Cx of greater than or equal to about 0.18 and less than or equal to about 0.19 in a color coordination.
12. A display device comprising a light source and a photoluminescence element, wherein the photoluminescence element comprises the quantum dot of claim 1 , and the light source is configured to provide the photoluminescence element with incident light.
13. The display device of claim 12 , wherein the photoluminescence element is a stack structure comprising a substrate and a light emission layer disposed on the substrate, wherein the light emission layer comprise a pattern of a quantum dot polymer composite and the quantum dot polymer composite comprises a polymer matrix and the quantum dot dispersed in the polymer matrix.
14. The display device of claim 12 , wherein the display device is configured to have color reproducibility of greater than or equal to about 80% under a standard of BT2020.
15. A quantum dot, comprising
a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core,
wherein the quantum dot does not comprise cadmium,
the core comprises a Group III-V compound comprising a Group III metal and a Group V element,
the quantum dot has a maximum photoluminescence peak in a green light wavelength region,
a full width at half maximum of the maximum photoluminescence peak is less than about 50 nanometers,
a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and wherein in the quantum dot a mole ratio of phosphorus to indium is greater than or equal to about 0.6:1 and less than or equal to about 0.9:1 and wherein the Group V element does not comprise arsenic, antimony, or a combination thereof,
the shell comprises a first semiconductor nanocrystal shell and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, and
the second semiconductor nanocrystal shell has a thickness of less than 0.7 nanometers.
16. The quantum dot of claim 15 , wherein
the first semiconductor nanocrystal shell comprises zinc and selenium and
the second semiconductor nanocrystal comprise zinc and sulfur.
17. The quantum dot of claim 1 , wherein:
the shell comprises a first semiconductor nanocrystal shell and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell; and
the second semiconductor nanocrystal shell has a thickness of less than 0.7 nanometers.
18. The quantum dot of claim 15 , wherein in the quantum dot, a mole ratio of selenium to sulfur (Se:S) is greater than or equal to about 0.80:1 and less than or equal to about 2:1.
19. A quantum dot, comprising
a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core,
wherein the quantum dot does not comprise cadmium,
the core comprises a Group III-V compound comprising a Group III metal and a Group V element,
the quantum dot has a maximum photoluminescence peak in a green light wavelength region,
a full width at half maximum of the maximum photoluminescence peak is less than about 50 nanometers,
a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and
the quantum dot further comprises an additive comprising Sn, Bi, or a combination thereof.
20. A display device comprising a light source and a photoluminescence element, wherein the photoluminescence element comprises the quantum dot of claim 15 , and the light source is configured to provide the photoluminescence element with incident light.
21. The quantum dot of claim 19 , wherein a molar amount of the additive is less than about 0.1 moles with respect to 1 mole of the Group III metal.
22. The quantum dot of claim 1 , wherein in the quantum dot, a mole ratio of selenium to sulfur (Se:S) is greater than or equal to about 0.80:1 and less than 1.30:1.
23. The quantum dot of claim 1 , wherein in the quantum dot, a mole ratio of selenium to sulfur (Se:S) is greater than or equal to about 0.80:1 and less than or equal to 0.92:1.