Semiconductor device and method for producing the same
A semiconductor device including a base substrate B, which includes wire layers, chips C 1 , C 2 , C 3 , C 4 , C 5 , and C 6 provided on the base substrate B, and a protective film P provided on each of the side faces of the chips C 1 , C 2 , C 3 , C 4 , C 5 , and C 6.
1. A semiconductor device comprising:
a base substrate including a wire layer;
a first chip provided on the base substrate;
a second chip provided on the first chip;
an insulating film provided on a side face of the first chip and a side face of the second chip; and
a resin layer covering the second chip and the insulating film,
wherein the insulating film is a stacked film of a protective film and a first oxide film, and
wherein the number of layers of the protective film on the side face of the first chip is greater than the number of layers of the protective film on the side face of the second chip.
2. The semiconductor device according to claim 1 , wherein the insulating film contains at least one of silicon oxide, silicon nitride, silicon carbide, boron nitride, and diamond-like carbon.
3. The semiconductor device according to claim 1 , wherein the insulating film is thicker at a portion along a direction perpendicular to the side face of the first chip than at a portion along a direction perpendicular to the side face of the second chip.
4. The semiconductor device according to claim 1 , further comprising a second oxide film provided on a face of the first chip on a side opposite to the base substrate,
wherein:
the second oxide film is thinner around peripheral edge portions of the first chip than around a central portion of the first chip.
5. The semiconductor device according to claim 4 , wherein an upper end portion of the protective film on the side face of the first chip is exposed from the first oxide film and the second oxide film.
6. The semiconductor device according to claim 5 , wherein the upper end portion of the protective film on the side face of the first chip is located between the first oxide film and the second oxide film.