IP Library Granted Patent US 12,219,829
Granted Patent B2
US 12,219,829 · App. 18/592,891 · Granted Feb 4, 2025

Display device

Inventors: Nayun Kwak (Yongin-si, KR); Chulkyu Kang (Yongin-si, KR); Daesuk Kim (Yongin-si, KR); Ilgoo Youn (Yongin-si, KR); Dongsun Lee (Yongin-si, KR); Soyoung Lee (Yongin-si, KR); Jieun Lee (Yongin-si, KR); Junyoung Jo (Yongin-si, KR); Minhee Choi (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/126G09G3/3233H01L27/1237H10K59/124H10K59/131G09G2300/0426G09G2300/0819
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Quick Facts
Patent No.
US 12,219,829
App. No.
18/592,891
Granted
Feb 4, 2025
Kind
B2
Abstract

A display device includes a pixel circuit disposed on a substrate, and a display element on the pixel circuit. The pixel circuit includes a first thin-film transistor comprising a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a second thin-film transistor comprising a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer being connected to the first semiconductor layer and the first gate electrode, a first shielding layer overlapping the second semiconductor layer, and a second shielding layer overlapping the second semiconductor layer and stacked on the first shielding layer.

Claims (32)

1. A display device comprising:

a first transistor including a first semiconductor layer, a first gate electrode and a second gate electrode;

a first shielding layer overlapping a portion of the first semiconductor layer, in a plan view;

a capacitor including a first capacitor electrode and a second capacitor electrode on the first capacitor electrode; and

a connection electrode connected to the first capacitor electrode and the first semiconductor layer,

wherein the first semiconductor layer comprises a source area, a drain area, a first channel area, a second channel area and a middle area, the middle area is between the first channel area and the second channel area,

wherein the first gate electrode overlaps the first channel area and the second gate electrode overlaps the second channel area in a plan view,

wherein the first shielding layer overlaps the middle area of the first semiconductor layer, and

wherein the connection electrode is connected to one of the source area and the drain area of the first semiconductor layer.

2. The display device of claim 1 , wherein the first gate electrode and the second gate electrode are on a same layer.

3. The display device of claim 1 , wherein the connection electrode is connected to the first capacitor electrode through an opening defined in the second capacitor electrode.

4. The display device of claim 1 , further comprising a driving transistor, and

wherein a part of the first capacitor electrode is a gate electrode of the driving transistor.

5. The display device of claim 4 , wherein a semiconductor layer of the driving transistor is connected to the other one of the source area and the drain area of the first semiconductor layer.

6. The display device of claim 4 , further comprising a second transistor including a second semiconductor layer, a first gate electrode and a second gate electrode,

wherein the second semiconductor layer comprises a source area, a drain area, a first channel area, a second channel area and a middle area, the middle area is between the first channel area and the second channel area,

wherein the first gate electrode of the second transistor overlaps the first channel area of the second semiconductor layer and the second gate electrode of the second transistor overlaps the second channel area of the second semiconductor layer in a plan view, and

wherein the connection electrode is connected to one of the source area and the drain area of the second semiconductor layer.

7. The display device of claim 6 , further comprising a first voltage line connected to the other one of the source area and the drain area of the second semiconductor layer.

8. The display device of claim 1 , wherein the first shielding layer and the second capacitor electrode are on a same layer.

9. The display device of claim 1 , further comprising a second voltage line connected to the first shielding layer.

10. The display device of claim 9 , further comprising a second shielding layer overlapping the first shielding layer.

11. The display device of claim 10 , wherein the second shielding layer is connected to the first shielding layer.

12. The display device of claim 10 , wherein a part of the second voltage line is the second shielding layer.

13. The display device of claim 10 , wherein the connection electrode and the second shielding layer are on a same layer.

14. The display device of claim 1 , further comprising a voltage line connected to the second capacitor electrode.

15. The display device of claim 14 , wherein a voltage applied to the first shielding layer and a voltage applied to the voltage line are the same.

16. The display device of claim 1 , wherein the first semiconductor layer of the first transistor comprises polysilicon.

17. The display device of claim 1 , wherein the first shielding layer receives a constant voltage.

18. The display device of claim 1 , further comprising a scan line providing a scan signal to the first gate electrode and the second gate electrode of the first transistor.

19. The display device of claim 18 , wherein the scan line crosses the connection electrode.

20. The display device of claim 18 , wherein the scan line is in a space between the first shielding layer and the second capacitor electrode, in a plan view.

Priority Claims (1)
KR 10-2019-0160007 · Dec 4, 2019 · national
Continuity (3)
Continuation 18161434 · Jan 30, 2023
Continuation 17085288 · Oct 30, 2020
Related Publication 20240206247A1 · Jun 20, 2024
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