Read level compensation for partially programmed blocks of memory devices
A system can include a memory device containing blocks made up of wordlines respectively connected to sets of memory cells, and a processing device, operatively coupled with the memory device to perform operations including responsive to receiving a read request that specifies a block, determining a value of a metric reflective of a number of programmed wordlines of the block. The operations can also include responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric, and performing, using the read voltage offset, a read operation responsive to the read request.
1. A system comprising:
a memory device comprising a plurality of blocks, each block of the plurality of blocks comprising a plurality of wordlines, each wordline of the plurality of wordlines connected to a respective set of memory cells; and
a processing device, operatively coupled with the memory device to perform operations comprising:
responsive to receiving a read request that specifies a block, determining a value of a metric reflective of a number of programmed wordlines of the block;
responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric; and
performing, using the read voltage offset, a read operation responsive to the read request.
2. The system of claim 1 , wherein identifying the read voltage offset comprises:
identifying, in a metadata structure, a record associating the value of the metric and the corresponding read voltage offset.
3. The system of claim 1 , wherein determining whether the block is in a partially programmed state comprises:
determining whether at least one wordline in the block is connected to a corresponding set of erased memory cells.
4. The system of claim 1 , wherein determining the value of the metric comprises:
identifying the value in a metadata structure.
5. The system of claim 4 , wherein the metadata structure is stored in a local memory.
6. The system of claim 4 , the metadata structure is stored on the memory device.
7. The system of claim 1 , wherein the metric reflects a ratio of the number of programmed wordlines of the block to a total number of wordlines of the block.
8. A method comprising:
responsive to receiving a read request that specifies a block within a plurality of blocks of a memory device, determining a value of a metric reflective of a number of programmed wordlines of the block;
responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric; and
performing, using the read voltage offset, a read operation responsive to the read request.
9. The method of claim 8 , wherein identifying the read voltage offset comprises:
identifying, in a metadata structure, a record associating the value of the metric and the corresponding read voltage offset.
10. The method of claim 8 , wherein determining whether the block is in a partially programmed state comprises:
determining whether at least one wordline in the block is connected to a corresponding set of erased memory cells.
11. The method of claim 8 , wherein determining the value of the metric comprises:
identifying the value in a metadata structure.
12. The method of claim 11 , wherein the metadata structure is stored in a local memory.
13. The method of claim 11 , wherein the metadata structure is stored on the memory device.
14. The method of claim 8 , wherein the metric reflects a ratio of the number of programmed wordlines of the block to a total number of wordlines of the block.
15. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
receiving a read request that specifies a block within a plurality of blocks, the block comprising a plurality of wordlines on a memory device;
responsive to receiving the read request, determining a value of a metric reflective of a number of programmed wordlines of the block;
responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric; and
issuing, to the memory device, a read command comprising the read voltage offset.
16. The non-transitory computer-readable storage medium of claim 15 , wherein identifying the read voltage offset comprises:
identifying, in a metadata structure, a record associating the value of the metric and the corresponding read voltage offset.
17. The non-transitory computer-readable storage medium of claim 15 , wherein determining whether the block is in a partially programmed state comprises:
determining whether at least one wordline of the block is connected to a corresponding set of erased memory cells.
18. The non-transitory computer-readable storage medium of claim 15 , wherein determining the value of the metric comprises:
identifying the value in a metadata structure.
19. The non-transitory computer-readable storage medium of claim 18 , wherein the metadata structure is stored in a local memory.
20. The non-transitory computer-readable storage medium of claim 18 , wherein the metric is a count of programmed wordlines of the block.