Granted Patent B2

US 12,243,742 · App. 17/233,382 · Granted Mar 4, 2025

Inventors: Seunghyun Lee (Seoul, KR); Hyunchul Kim (Hwaseong-si, KR); Seungwoo Choi (Hwaseong-si, KR); Yeahyun Gu (Hwaseong-si, KR)

Assignee: ASM IP Holding B.V.

H01L21/0332H01L21/02164H01L21/02274H01L21/0228

Abstract

Claims (27)

1. A method for adjusting a film stress comprising:

loading a substrate onto a substrate support in a reaction space;

forming a first film on the substrate in a first step comprising:

supplying a first reactant during a first period to the reaction space; and

supplying a second reactant to the reaction space,

wherein during the first step, the first reactant is dissociated by a plasma within the reaction space from the second reactant during a second period to form the first film from dissociated fragments of the first reactant that are adsorbed onto the substrate, wherein the first period and the second period do not overlap; and

converting the first film into a second film by supplying a third reactant to the first film in a second step, wherein the cycle ratio of the first step to the second step is larger than 5 to adjust the stress of the second film.

2. The method according to claim 1 , wherein the second reactant is activated by a radio frequency power.

3. The method according to claim 2 , wherein the second reactant is at least one of Ar and He, or mixture thereof.

4. The method according to claim 3 , wherein the second reactant densifies the first film.

5. The method according to claim 1 , wherein the third reactant is activated by a radio frequency power and chemically reacts to the first film within the reaction space during a third period.

6. The method according to claim 1 , wherein the first step is repeated at least one time and the second step is repeated at least one time,

wherein the first step and the second step are sequentially repeated at least one time.

7. The method according to claim 1 , wherein the first reactant is silicon-containing gas.

8. The method according to claim 1 , wherein the second reactant is at least one of Ar and He or mixture thereof.

9. The method according to claim 1 , wherein the third reactant is oxygen-containing gas.

10. The method according to claim 7 , the silicon-containing gas is at least one of DIPAS, SiH 3 N(iPr) 2 ; TSA, (SiH 3 ) 3 N; DSO, (SiH 3 ) 2 ; DSMA, (SiH 3 ) 2 NMe; DSEA, (SiH 3 ) 2 NEt; DSIPA, (SiH 3 ) 2 N(iPr); DSTBA, (SiH 3 ) 2 N(tBu); DEAS, SiH 3 NEt 2 ; DTBAS, SiH 3 N(tBu) 2 ; BDEAS, SiH 2 (NEt 2 ) 2 ; BDMAS, SiH 2 (NMe 2 ) 2 ; BTBAS, SiH 2 (NHtBu) 2 ; BITS, SiH 2 (NHSiMe 3 ) 2 ; TEOS, Si(OEt) 4 ; SiCl 4 ; HCD, Si 2 Cl 6 ; 3DMAS, SiH(N(Me) 2 ) 3 ; BEMAS, Si H 2 [N(Et)(Me)] 2 ; AHEAD, Si 2 (NHEt) 6 ; TEAS, Si(NHEt) 4 ; Si 3 H 8 ; DCS, SiH 2 Cl 2 ; SiHI 3 ; SiH 2 I 2 or mixture thereof.

11. The method according to claim 9 , wherein the oxygen-containing gas is at least one of O 2 , O 3 , CO 2 , H 2 O, NO 2 and N 2 O or mixture thereof.

12. The method according to claim 1 , wherein the second film comprises silicon oxide.

13. The method according to claim 4 , wherein the fragments of the first reactant are at least one of silicon, carbon, nitrogen, chlorine, iodine, hydrogen and alkyl groups or mixture thereof, and wherein the first film consists of the fragments.

14. The method according to claim 1 , wherein a tensile stress of the second film increases as the cycle ratio of the first step to the second step increases.

15. The method according to claim 1 , wherein a compressive stress of the second film increases as the cycle ratio of the first step to the second step decreases.

16. The method according to claim 5 , wherein the radio frequency power is supplied in pulses during the third period with a duty ratio of 10 to 75%.

17. The method according to claim 1 , wherein the substrate includes a pattern and the second film is a hardmask formed on the pattern, wherein the first step and the second step are carried out at 50° C. or below.

18. The method according to claim 17 , wherein a wet etch rate of the second film is adjusted by controlling the cycle ratio of the first step to the second step.

19. The method according to claim 18 , wherein the wet etch rate of the second film is almost the same as the wet etch rate of silicon oxide hardmask formed at 300° C. or above.

20. The method according to claim 17 , wherein the second film is a silicon oxide hardmask.

Assignments (1)

Continuity (2)

References Cited (400)