IP Library Granted Patent US 12,249,447
Granted Patent B2
US 12,249,447 · App. 17/921,854 · Granted Mar 11, 2025

Thick film resistor paste, thick film resistor, and electronic component

Inventors: Masaki Ando (Tokyo, JP); Takahito Nagano (Ome, JP)
Assignee: SUMITOMO METAL MINING CO., LTD.
H01C17/06533H01C7/003
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Quick Facts
Patent No.
US 12,249,447
App. No.
17/921,854
Granted
Mar 11, 2025
Kind
B2
Abstract

To provide a thick film resistor paste for a resistor having no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 60 mass % or less of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

Claims (9)

1. A thick film resistor paste, characterized by kneading: a ruthenium-oxide-containing glass powder that does not contain a lead ruthenate; and an organic vehicle,

wherein the ruthenium-oxide-containing glass powder comprises 10 mass % or more and 60 mass % or less of ruthenium oxide relative to 100 mass % of the glass composition containing the ruthenium oxide;

wherein a glass composition of the ruthenium-oxide-containing glass powder comprises 3 mass % or more and 60 mass % or less of silicon oxide, 30 mass % or more and 90 mass % or less of lead oxide, and 5 mass % or more and 50 mass % or less of boron oxide relative to 100 mass % of glass components; and

wherein a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

2. The thick film resistor paste according to claim 1 , wherein an average particle diameter of the ruthenium-oxide-containing glass powder is 5 micrometers or less.

3. The thick film resistor comprising a sintered body of the thick film resistor paste according to claim 2 .

4. An electronic component provided with the thick film resistor according to claim 3 .

5. The thick film resistor comprising a sintered body of the thick film resistor paste according to claim 1 .

6. An electronic component provided with the thick film resistor according to claim 5 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2022
From: ANDO, MASAKI; NAGANO, TAKAHITO
To: SUMITOMO METAL MINING CO., LTD.
Reel/Frame 061565/0660 →
Priority Claims (1)
JP 2020-081116 · May 1, 2020 · national
Continuity (1)
Related Publication 20230162896A1 · May 25, 2023
References Cited (10)
US 5379016A · Smith · 1995 [cited by examiner]
US 8815125B2 · Ogata · 2014 [cited by examiner]
US 10115505B2 · Murakami · 2018 [cited by examiner]
US 12024466B2 · Ando · 2024 [cited by examiner]
JP S52054195A · 1977 [cited by applicant]
JP S53100496A · 1978 [cited by applicant]
JP H04320003A · 1992 [cited by applicant]
JP H06163202A · 1994 [cited by applicant]
JP 4706703B2 · 2011 [cited by applicant]
International Search Report dated Jul. 6, 2021, issued in counterpart International Application No. PCT/JP2021/017301. [cited by applicant]