IP Library › Granted Patent US 12,249,641
Granted Patent B1
US 12,249,641 · App. 18/383,009 · Granted Mar 11, 2025

Photon number resolving detector with thermal diode

Inventors: Faraz Najafi (Palo Alto, CA); Qiaodan Jin Stone (Sunnyvale, CA); Andrea Bahgat Shehata (Mountain View, CA)
Assignee: PSIQUANTUM CORP.
H01L29/66992H01L23/345H01L29/861H01L29/868H01L31/09H01L31/107H10N60/30H10N69/00
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Quick Facts
Patent No.
US 12,249,641
App. No.
18/383,009
Granted
Mar 11, 2025
Kind
B1
Abstract

The various embodiments described herein include methods, devices, and systems for fabricating and operating diodes. In one aspect, an electrical circuit includes: (1) a diode component having a particular energy band gap; (2) an electrical source electrically coupled to the diode component and configured to bias the diode component in a particular state; and (3) a heating component thermally coupled to a junction of the diode component and configured to selectively supply heat corresponding to the particular energy band gap.

Claims (28)

1. A photon number resolving detector comprising:

a diode having a particular energy band gap;

a plurality of heating components thermally coupled to a junction of the diode, the plurality of heating components comprising a first heating component and a second heating component, each heating component comprising a respective photon detector configured to generate heat that corresponds to the particular energy band gap in response to one or more respective incident photons; and

a readout circuit to generate a first voltage in response the first heating component receiving an incident photon, and to generate a second voltage in response to the first heating component receiving the incident photon and the second heating component receiving an additional incident photon, the second voltage being higher than the first voltage.

2. The photon number resolving detector of claim 1 , wherein the plurality of heating components further comprises a third heating component.

3. The photon number resolving detector of claim 2 , wherein the readout circuit is further configured to generate a third voltage in response to the first heating component, the second heating component, and the third heating component each receiving a respective photon, the third voltage being higher than the second voltage.

4. The photon number resolving detector of claim 1 , wherein the diode is reverse biased by an electrical source.

5. The photon number resolving detector of claim 1 , wherein each respective photon detector comprises a superconducting photon detector.

6. The photon number resolving detector of claim 5 , wherein the superconducting photon detector transitions from a superconducting state to a non-superconducting state in response to a photon incident to the superconducting photon detector, wherein resistive heat is generated by the superconducting photon detector in the non-superconducting state.

7. The photon number resolving detector of claim 5 , wherein the superconducting photon detector comprises one or more nanowires configured to detect single photons.

8. The photon number resolving detector of claim 1 , wherein the photon number resolving detector is arranged within a cryogenic enclosure to maintain each respective photon detector at a cryogenic temperature.

9. The photon number resolving detector of claim 8 , wherein the cryogenic temperature is below 100 K.

10. The photon number resolving detector of claim 1 , wherein each heating component is separated from the junction of the diode by a thermally-conductive, electrically-insulating component.

11. The photon number resolving detector of claim 1 , wherein each heating component is configured to generate heat energy in a range of 100 nanowatts to 10 milliwatts.

12. A method comprising:

maintaining a photon number resolving detector at a cryogenic temperature, the photon number resolving detector comprising a diode and a plurality of heating components that are thermally coupled to the diode, the diode having a particular energy band gap, the plurality of heating components comprising a first heating component and a second heating component, each heating component comprising a respective photon detector configured to generate heat that corresponds to the particular energy band gap;

generating heat from the first heating component in response to the first heating component receiving an incident photon, the heat being coupled to the diode to increase voltage at a readout circuit; and

generating a voltage on the readout circuit in response to the incident photon.

13. The method of claim 12 , wherein the voltage is a first voltage, the incident photon is a first incident photon, and the method further comprises:

generating additional heat from the first heating component in response to the first heating component receiving a first additional incident photon and further in response to the second heating component receiving a second additional incident photon, the additional heat being coupled to the diode to increase voltage at the readout circuit; and

generating a second voltage on the readout circuit in response to the first additional incident photon and the second additional incident photon, the second voltage being higher than the first voltage.

14. The method of claim 12 , wherein the diode is reverse biased by an electrical source.

15. The method of claim 12 , wherein each respective photon detector comprises a superconducting photon detector.

16. The method of claim 15 , wherein the superconducting photon detector transitions from a superconducting state to a non-superconducting state in response to a photon incident to the superconducting photon detector, wherein resistive heat is generated by the superconducting photon detector in the non-superconducting state.

17. The method of claim 15 , wherein the superconducting photon detector comprises one or more nanowires to detector single photons.

18. The method of claim 12 , wherein the photon number resolving detector is arranged within a cryogenic enclosure to maintain each respective photon detector at a cryogenic temperature.

19. The method of claim 18 , wherein the cryogenic temperature is below 100 K.

20. The method of claim 12 , wherein each heating component is configured to generate heat energy in a range of 100 nanowatts to 10 milliwatts.

Continuity (3)
Continuation 17705201 · Mar 25, 2022
Continuation 16773921 · Jan 27, 2020
Provisional Application 62798983 · Jan 30, 2019
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