IP Library Granted Patent US 12,255,155
Granted Patent B2
US 12,255,155 · App. 17/587,290 · Granted Mar 18, 2025

Package structure with stacked semiconductor dies

Inventors: Yi-Chao Mao (Zhongli, TW); Chin-Chuan Chang (Zhudong Township, TW); Szu-Wei Lu (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L23/562H01L21/76816H01L24/08H01L24/17H01L24/32H01L2224/02333H01L2224/83203
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Quick Facts
Patent No.
US 12,255,155
App. No.
17/587,290
Granted
Mar 18, 2025
Kind
B2
Abstract

A package structure is provided. The package structure includes a lower semiconductor die and a first protective layer surrounding the lower semiconductor die. The package structure also includes a dielectric layer partially covering the first protective layer and the lower semiconductor die and an upper semiconductor die over the lower semiconductor die and the first protective layer. The upper semiconductor die is bonded with the lower semiconductor die through a connector. The package structure further includes an insulating film surrounding the connector and a second protective layer surrounding the upper semiconductor die. A portion of the second protective layer is between the insulating film and the dielectric layer.

Claims (38)

1. A package structure, comprising:

a lower semiconductor die;

a first protective layer surrounding the lower semiconductor die;

a dielectric layer partially covering the first protective layer and the lower semiconductor die;

an upper semiconductor die over the lower semiconductor die and the first protective layer, wherein the upper semiconductor die is bonded with the lower semiconductor die through a connector;

an insulating film surrounding the connector; and

a second protective layer surrounding the upper semiconductor die, wherein a portion of the second protective layer is between the insulating film and the dielectric layer.

2. The package structure as claimed in claim 1 , wherein the insulating film comprises a squeezed portion extending beyond an edge of the upper semiconductor die, and the squeezed portion has a sidewall surface curved outwards with respect to an inner portion of the squeezed portion.

3. The package structure as claimed in claim 2 , wherein the squeezed portion is separated from the dielectric layer by a portion of the second protective layer.

4. The package structure as claimed in claim 2 , wherein the squeezed portion is in direct contact with the dielectric layer.

5. The package structure as claimed in claim 4 , wherein the insulating film is separated from the dielectric layer by a portion of the second protective layer.

6. The package structure as claimed in claim 1 , wherein the lower semiconductor die has an edge laterally between opposite edges of the upper semiconductor die.

7. The package structure as claimed in claim 1 , wherein the insulating film is in direct contact with the lower semiconductor die.

8. The package structure as claimed in claim 1 , wherein the insulating film is in direct contact with the first protective layer.

9. The package structure as claimed in claim 1 , wherein edges of the insulating film and the upper semiconductor die are substantially aligned with each other.

10. The package structure as claimed in claim 1 , further comprising:

a second lower semiconductor die surrounded by the first protective layer, wherein the upper semiconductor die is bonded with the second lower semiconductor die through a second connector, and the insulating film surrounds the second connector.

11. A package structure, comprising:

a lower semiconductor die;

a first protective layer surrounding the lower semiconductor die;

an upper semiconductor die over the lower semiconductor die and the first protective layer, wherein the upper semiconductor die is bonded with the lower semiconductor die through a connector;

an insulating film surrounding the connector; and

a second protective layer surrounding the upper semiconductor die and the insulating film, wherein the insulating film is in direct contact with the first protective layer and the second protective layer.

12. The package structure as claimed in claim 11 , wherein the upper semiconductor die extends across an edge of the lower semiconductor die.

13. The package structure as claimed in claim 11 , wherein edges of the insulating film and the upper semiconductor die are substantially aligned with each other.

14. The package structure as claimed in claim 11 , wherein the insulating film comprises a squeezed portion extending beyond an edge of the upper semiconductor die.

15. The package structure as claimed in claim 11 , wherein a portion of the second protective layer is below the squeezed portion of the insulating film and above the lower semiconductor die.

16. A package structure, comprising:

a lower semiconductor die;

a first protective layer surrounding the lower semiconductor die;

an upper semiconductor die over the lower semiconductor die and the first protective layer, wherein the upper semiconductor die is bonded with the lower semiconductor die through a connector;

an insulating film surrounding the connector, wherein the insulating film comprises a squeezed portion extending beyond an edge of the upper semiconductor die, and the squeezed portion has a sidewall surface curved outwards with respect to an inner portion of the squeezed portion; and

a second protective layer surrounding the upper semiconductor die.

17. The package structure as claimed in claim 16 , wherein a portion of the second protective layer is below the squeezed portion of the insulating film and above the lower semiconductor die.

18. The package structure as claimed in claim 16 , wherein the insulating film is in direct contact with the first protective layer.

19. The package structure as claimed in claim 16 , wherein the first protective layer is substantially as thick as the lower semiconductor die.

20. The package structure as claimed in claim 16 , further comprising:

a second lower semiconductor die surrounded by the first protective layer, wherein the insulating film partially covers the second lower semiconductor die.

Continuity (3)
Continuation 16227449 · Dec 20, 2018
Provisional Application 62711929 · Jul 30, 2018
Related Publication 20220157743A1 · May 19, 2022
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