IP Library Granted Patent US 12,259,581
Granted Patent B2
US 12,259,581 · App. 17/793,596 · Granted Mar 25, 2025

Integrated optical device, integrated optical module, and method for manufacturing integrated optical device

Inventors: Ryohei Fukuzaki (Tokyo, JP); Masahiro Shinkai (Tokyo, JP)
Assignee: TDK CORPORATION
G02B6/3652G02B6/12G02B2006/12121
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Quick Facts
Patent No.
US 12,259,581
App. No.
17/793,596
Granted
Mar 25, 2025
Kind
B2
Abstract

An integrated optical device includes: a mounting base; an optical semiconductor device which is provided on a surface of the mounting base; a substrate; and an optical waveguide which is provided on a surface of the substrate, wherein an incident surface of the optical waveguide is disposed to face an emission surface of the optical semiconductor device, wherein light emitted from the optical semiconductor device is able to be incident to the optical waveguide, wherein the optical semiconductor device is connected to the mounting base through a metal layer, wherein the mounting base is connected to the substrate through the other metal layer, and wherein a mounting base bottom surface on the side opposite to a surface of the mounting base and a substrate bottom surface on the side opposite to a surface of the substrate are provided on the substantially same plane.

Claims (61)

1. An integrated optical device comprising:

a mounting base;

an optical semiconductor device which is provided on a surface of the mounting base;

a substrate; and

an optical waveguide which is provided on a surface of the substrate,

wherein an incident surface of the optical waveguide is disposed to face an emission surface of the optical semiconductor device,

wherein light emitted from the optical semiconductor device is able to be incident to the optical waveguide,

wherein the optical semiconductor device is connected to the mounting base through a metal layer,

wherein the mounting base is connected to the substrate through the other metal layer,

wherein a mounting base bottom surface on the side opposite to a surface of the mounting base and a substrate bottom surface on the side opposite to a surface of the substrate are provided on the substantially same plane,

wherein the mounting base has a substantially rectangular parallelepiped shape including first to third outer surfaces,

wherein the first outer surface is an upper surface of the mounting base,

wherein the second outer surface is a first side surface of the mounting base,

wherein the third outer surface includes a second side surface which faces the first side surface, third and fourth side surfaces which are respectively adjacent to the first and second side surfaces to face them, and the mounting base bottom surface which faces the upper surface,

wherein the optical semiconductor device is mounted on the first outer surface of the mounting base,

wherein the optical semiconductor device is disposed to be optically coupled to the optical waveguide,

wherein the second outer surface of the mounting base is connected to a side surface of the substrate through the metal layer,

wherein at least a part of the third outer surface of the mounting base includes a roughened region, and

wherein the roughened region is provided in a front region near the first side surface in relation to a middle position between the first side surface and the second side surface.

2. The integrated optical device according to claim 1 ,

wherein the surface roughness of the roughened region is larger than the surface roughness of the first and second outer surfaces.

3. The integrated optical device according to claim 1 ,

wherein the roughened region has a maximum cross-sectional height (Rt) of 5 μm or more and 50 μm or less.

4. The integrated optical device according to claim 1 ,

wherein the roughened region is provided on the third and fourth side surfaces, and

wherein the second side surface and the mounting base bottom surface are smooth surfaces not provided with the roughened region.

5. The integrated optical device according to claim 1 ,

wherein two or more optical semiconductor devices are provided.

6. The integrated optical device according to claim 1 ,

wherein the optical semiconductor device includes a first optical semiconductor device which outputs red light, a second optical semiconductor device which outputs green light, and a third optical semiconductor device which outputs blue light.

7. The integrated optical device according to claim 1 ,

wherein an antireflection film is provided between the optical semiconductor device and the optical waveguide.

8. The integrated optical device according to claim 1 ,

wherein a plurality of the optical semiconductor devices are provided,

wherein the plurality of optical semiconductor devices emit light having different wavelengths,

wherein the optical waveguide is provided with a core into which light emitted from the plurality of optical semiconductor devices is configured to be incident, and

wherein the plurality of cores are gathered together on the front side reaching the emission surface of the optical waveguide.

9. An integrated optical module comprising:

the integrated optical device according to claim 1 ; and

a package which accommodates the integrated optical device,

wherein in the integrated optical device, both the mounting base bottom surface and the substrate bottom surface are fixed to one inner surface of the package through an adhesive layer containing metal or resin.

10. The integrated optical module according to claim 9 ,

wherein the adhesive layer is made of a material in which a filler is mixed with a resin.

11. The integrated optical module according to claim 9 ,

wherein the adhesive layer has thermal conductivity of 4 W/m·K or more.

12. The integrated optical device according to Claim 1 ,

wherein the surface roughness of the roughened region is larger than the surfaces of the mounting base other than the roughened region.

13. The integrated optical device according to Claim 1 ,

wherein surfaces of the mounting base other than the roughened region has a maximum cross-sectional height (Rt) of 0.01 μm or more and less than 5 μm.

14. A method for manufacturing an integrated optical device comprising:

preparing a mounting base including first to third outer surfaces, having an optical semiconductor device mounted on the first outer surface, having a metal bonding material provided in the second outer surface, and having a roughened region formed in at least a part of the third outer surface,

wherein the mounting base has a substantially rectangular parallelepiped shape including first to third outer surfaces,

wherein the first outer surface is an upper surface of the mounting base,

wherein the second outer surface is a first side surface of the mounting base,

wherein the third outer surface includes a second side surface which faces the first side surface, third and fourth side surfaces which are respectively adjacent to the first and second side surfaces to face them, and the mounting base bottom surface which faces the upper surface,

wherein the optical semiconductor device is mounted on the first outer surface of the mounting base,

wherein the second outer surface of the mounting base is connected to a side surface of a substrate through a metal layer,

wherein at least a part of the third outer surface of the mounting base includes a roughened region, and

wherein the roughened region is provided in a front region near the first side surface in relation to a middle position between the first side surface and the second side surface;

adjusting a position of the optical semiconductor device to be optically coupled to an optical waveguide while heating the metal bonding material together with the mounting base by irradiating the roughened region with a laser beam in a state in which a side surface of the substrate provided with the optical waveguide is in contact with the second outer surface of the mounting base; and

fixing the optical semiconductor device by stopping the irradiation of the laser beam to cool the mounting base and metal-bonding the mounting base and the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2022
From: FUKUZAKI, RYOHEI; SHINKAI, MASAHIRO
To: TDK CORPORATION
Reel/Frame 060714/0949 →
Priority Claims (2)
JP 2020-007205 · Jan 21, 2020 · national
JP 2020-056032 · Mar 26, 2020 · national
Continuity (1)
Related Publication 20230134378A1 · May 4, 2023
References Cited (19)
US 8274867B2 · Mori · 2012 [cited by examiner]
US 20040202212A1 · Yamauchi · 2004 [cited by applicant]
US 20090103923A1 · Hosomi et al. · 2009 [cited by applicant]
US 20100108117A1 · Hamano et al. · 2010 [cited by applicant]
US 20110110622A1 · Akutsu et al. · 2011 [cited by applicant]
US 20110242697A1 · Mori et al. · 2011 [cited by applicant]
US 20170146744A1 · Katsuyama et al. · 2017 [cited by applicant]
CN 1538411A · 2004 [cited by applicant]
JP H11194224A · 1999 [cited by applicant]
JP 2000284135A · 2000 [cited by applicant]
JP 2002323629A · 2002 [cited by applicant]
JP 2005309370A · 2005 [cited by applicant]
JP 2009105106A · 2009 [cited by applicant]
JP 2010109132A · 2010 [cited by applicant]
JP 2011102819A · 2011 [cited by applicant]
JP 2016118750A · 2016 [cited by applicant]
WO 2015170505A1 · 2015 [cited by applicant]
WO 2020196489A1 · 2020 [cited by applicant]
Mar. 30, 2021 International Search Report issued in Patent Application No. PCT/JP2020/048263. [cited by applicant]