Fin-based laterally-diffused metal-oxide semiconductor field effect transistor
In some implementations, a method includes forming first and second fins on a semiconductor substrate. The method further includes diffusing first and second implants into the semiconductor substrate and first and second fins. The method also includes patterning a field plate on the semiconductor substrate. An active device, such as a laterally-diffused metal-oxide semiconductor field effect (LDMOS) transistor can be formed in this way.
1. A method, comprising:
forming a semiconductor fin having a first conductivity type extending upward from a surface of a semiconductor substrate;
forming a well region having an opposite second conductivity type, the well region extending under and into a first location of the fin;
forming a source region having the first conductivity type in the well region, the source region extending below the surface of the semiconductor substrate and into the first location of the fin;
forming a drain region having the first conductivity type, the drain region extending under and into a second location of the fin; and
forming a gate over the fin, the gate partially overlapping the well region and the source region.
2. The method of claim 1 , further comprising forming a field plate over the semiconductor fin between the gate and the drain region.
3. The method of claim 1 , wherein the semiconductor fin has a rectangular cross-section.
4. The method of claim 1 , wherein the semiconductor fin is a first fin, further comprising forming a second semiconductor fin, the first and second fins being parallel and noncollinear.
5. The method of claim 1 , wherein the semiconductor fin is a first fin, further comprising forming a second semiconductor fin, the first fin oriented along a first radial of a circle-and-spoke pattern, and the second fin oriented along a second radial of the circle-and-spoke pattern.
6. The method of claim 1 , further comprising forming a silicide contact on an end face of the fin.
7. The method of claim 1 , further comprising forming a first metal contact to the source region, a second metal contact to the drain region, and third metal contact to the gate.
8. The method of claim 7 , wherein the first or second metal contact conductively connects to the fin at an end face of the fin.
9. The method of claim 1 , further comprising forming a gate dielectric layer and a second dielectric layer on the fin, the second dielectric layer thicker than the gate dielectric layer, wherein the gate is located over a portion of the gate dielectric layer and the second dielectric layer, and the second dielectric layer extends on the fin from the gate to the drain region.
10. The method of claim 1 , wherein the first conductivity type is N-type and the second conductivity type is P-type.
11. An integrated circuit, comprising:
a semiconductor fin having a first conductivity type extending upward from a surface of a semiconductor substrate;
a well region having an opposite second conductivity type located in the substrate, the well region extending under and into a first location of the fin;
a source region having the first conductivity type in the well region, the source region extending below the surface of the semiconductor substrate and into the first location of the fin;
a drain region having the first conductivity type located in the substrate, the drain region extending under and into a second location of the fin at a second position of the semiconductor fin; and
a gate located over the semiconductor fin, the gate partially overlapping the well region and the source region.
12. The integrated circuit of claim 11 , further comprising a field plate over the semiconductor fin between the gate and the drain region.
13. The integrated circuit of claim 11 , wherein the semiconductor fin has a rectangular cross-section.
14. The integrated circuit of claim 11 , wherein the semiconductor fin is a first fin, and further comprising a second semiconductor fin located over the substrate, the first and second fins being parallel and noncollinear.
15. The integrated circuit of claim 11 , wherein the semiconductor fin is a first fin, and further comprising a second semiconductor fin, the first fin oriented along a first radial of a circle-and-spoke pattern, and the second fin oriented along a second radial of the circle-and-spoke pattern.
16. The integrated circuit of claim 11 , further comprising a silicide contact formed on an end face of the fin.
17. The integrated circuit of claim 11 , further comprising a first metal contact to the source region, a second metal contact to the drain region, and third metal contact to the gate.
18. The integrated circuit of claim 17 , wherein the first or second metal contact conductively connects to the fin at an end face of the fin.
19. The integrated circuit of claim 11 , further comprising a gate dielectric layer and a second dielectric layer formed on three sides of the fin, the second dielectric layer thicker than the gate dielectric layer, wherein the gate is located over a portion of the gate dielectric layer and the second dielectric layer, and the second dielectric layer extends on the fin from the gate to the drain region.
20. The integrated circuit of claim 11 , wherein the first conductivity type is N-type and the second conductivity type is P-type.
21. A method, comprising:
forming first and second semiconductor fins having a first conductivity type over a semiconductor substrate and directed along first and second radials projecting from a central semiconductor region;
forming a source region having the first conductivity type in the central semiconductor region, the source region extending under and into the first and second fins at first ends of the fins;
forming first and second drain regions having the first conductivity type and extending under and into opposite second ends of the fins; and
forming a gate over the first and second fins, the gate partially overlapping the source region, the first and second fins and the gate forming a circle-and-spoke pattern.