IP Library Granted Patent US 12,274,113
Granted Patent B2
US 12,274,113 · App. 17/427,012 · Granted Apr 8, 2025

Hole transport material, quantum dot light-emitting device and manufacturing method thereof, and display apparatus

Inventor: Haowei Wang (Beijing, CN)
Assignee: BOE Technology Group Co., Ltd.
H10K50/15C07C57/18C07C211/09C07C211/54C07D209/82C07D303/32C07D405/06H10K50/16H10K71/00B82Y30/00H10K85/631H10K85/6572H10K2102/321
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Quick Facts
Patent No.
US 12,274,113
App. No.
17/427,012
Granted
Apr 8, 2025
Kind
B2
Abstract

The present disclosure provides a hole transport material, a quantum dot light-emitting device and a manufacturing method thereof and a display apparatus. A surface of a quantum dot is modified with a ligand capable of being cross-linked with a modifying group of the hole transport material, that is, a cross-linking group in the ligand, so that when the quantum dot light-emitting device is manufactured, the cross-linking group of the quantum dot material is cross-linked with the modifying group of the hole transport material under a set external stimulus, so that the coupling degree between a light-emitting layer and a hole transport layer is increased and an interface structure between the light-emitting layer and the hole transport layer is weakened, thus facilitating carrier transmission. Under the condition of not sacrificing the transmission rate of electrons, hole injection is increased to the greatest extent, so as to regulate the injection balance of carriers, improve the carrier recombination rate of the quantum dot light-emitting device, and further improve the luminous efficiency and other device performances of the quantum dot light-emitting device. Moreover, the increase of hole injection will reduce the aggregation of carriers at an interface, thereby improving the stability of the device.

Claims (61)

1. A quantum dot light-emitting device, comprising an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode disposed in a stacked mode, wherein

the hole transport layer comprises a hole transport material comprising a body of the hole transport material and a modifying group connected with the body of the hole transport material, wherein the modifying group is configured to be cross-linked with a cross-linking group of a quantum dot material under a set external stimulus, wherein

the light-emitting layer comprises a quantum dot material comprising a quantum dot and a ligand connected with the quantum dot; and

the ligand comprises a coordinating group bonded with the quantum dot, a solubilizing group connected with the coordinating group, and a cross-linking group connected with the solubilizing group, wherein the cross-linking group is cross-linked with the modifying group of the hole transport material;

wherein the quantum dot material and the hole transport material are arranged in different layers;

wherein a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

2. The quantum dot light-emitting device according to claim 1 , wherein the cross-linking group comprises at least one of a double bond group, a triple bond group or an epoxy group.

3. The quantum dot light-emitting device according to claim 2 , wherein the cross-linking group comprises at least one of alkenyl group, alkynyl group, ester group, aldehyde group, carbonyl group, azide, cyano group, amino group, carboxyl group, mercapto group, ethylene oxide, propylene oxide, butylene oxide or pentane oxide.

4. The quantum dot light-emitting device according to claim 1 , wherein the solubilizing group comprises at least one of ethyl, n-butyl, tert-butyl, n-octyl, tert-butyl phenyl, methoxy or n-butoxy.

5. The quantum dot light-emitting device according to claim 1 , wherein the coordinating group comprises at least one of amino, polyamino, hydroxyl, polyhydroxy, mercapto, polythiol, thioether, polythioether, phosphine or phosphine oxide.

6. The quantum dot light-emitting device according to claim 1 , further comprising a substrate, wherein the anode, the hole transport layer, the light-emitting layer, the electron transport layer and the cathode are sequentially stacked on the substrate; or further comprising a substrate, wherein the cathode, the electron transport layer, the light-emitting layer, the hole transport layer and the anode are sequentially stacked on the substrate.

7. A display apparatus, comprising a quantum dot light-emitting device, wherein the quantum dot light-emitting device comprises an anode, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode disposed in a stacked mode, wherein

the hole transport layer comprises a hole transport material comprising a body of the hole transport material and a modifying group connected with the body of the hole transport material, wherein the modifying group is configured to be cross-linked with a cross-linking group of a quantum dot material under a set external stimulus, wherein

the light-emitting layer comprises a quantum dot material comprising a quantum dot and a ligand connected with the quantum dot; and

the ligand comprises a coordinating group bonded with the quantum dot, a solubilizing group connected with the coordinating group, and a cross-linking group connected with the solubilizing group, wherein the cross-linking group is cross-linked with the modifying group of the hole transport material;

wherein the quantum dot material and the hole transport material are arranged in different layers;

wherein a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or,

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

or

a molecular formula of the ligand of the quantum dot material is as follows:

a molecular formula of the hole transport material is as follows:

and a molecular formula after the ligand of the quantum dot material is cross-linked with the hole transport material is as follows:

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2021
From: WANG, HAOWEI
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 057035/0629 →
Continuity (1)
Related Publication 20220320453A1 · Oct 6, 2022
References Cited (2)
US 20190305241A1 · Angioni · 2019 [cited by examiner]
US 20210408417A1 · Angioni · 2021 [cited by examiner]