Gate structures in transistors and method of forming same
A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric around the first nanostructure; a second high-k gate dielectric around the second nanostructure; and a gate electrode over the first and second high-k gate dielectrics. The gate electrode includes a first work function metal; a second work function metal over the first work function metal; and a first metal residue at an interface between the first work function metal and the second work function metal, wherein the first metal residue has a metal element that is different than a metal element of the first work function metal.
1. A device comprising:
a first semiconductor structure;
a second semiconductor structure over the first semiconductor structure;
a first high-k gate dielectric around the first semiconductor structure;
a second high-k gate dielectric around the second semiconductor structure, wherein the first high-k gate dielectric and the second high-k gate dielectric each comprise fluorine; and
a gate electrode over the first and second high-k gate dielectrics, wherein the gate electrode comprises:
a first work function metal, wherein the first work function metal comprises fluorine;
a second work function metal over the first work function metal; and
a tungsten residue between the first work function metal and the second work function metal.
2. The device of claim 1 , wherein the first work function metal comprises a higher concentration of fluorine than the second work function metal.
3. The device of claim 1 , wherein the first work function metal and the second work function metal are the same conductivity type.
4. The device of claim 3 , wherein the first work function metal and the second work function metal are each p-type.
5. The device of claim 1 , wherein the first high-k gate dielectric further comprises hafnium oxide, and wherein a ratio of fluorine to hafnium in the first high-k gate dielectric is in a range of 0.015 to 0.2.
6. The device of claim 5 , wherein a ratio of tungsten to hafnium in a region between the first semiconductor structure and the second semiconductor structure is less than 0.1.
7. The device of claim 1 , wherein the tungsten residue comprises a plurality of discrete tungsten regions.
8. The device of claim 1 , wherein the gate electrode further comprises:
an adhesion layer over the second work function metal; and
a fill metal over the adhesion layer.
9. The device of claim 1 , wherein the second work function metal is free of fluorine.
10. A transistor comprising:
a first nanostructure over a semiconductor substrate;
a second nanostructure over the first nanostructure;
a gate dielectric surrounding the first nanostructure and the second nanostructure, wherein the gate dielectric comprises hafnium and fluorine; and
a gate electrode over the gate dielectric, wherein the gate electrode comprises:
a p-type work function material; and
discrete pockets of tungsten embedded in the p-type work function material.
11. The transistor of claim 10 , wherein the p-type work function material is a multi-layer structure comprising:
a first p-type work function metal layer; and
a second p-type work function metal layer, wherein the discrete pockets of tungsten are disposed between the first p-type work function metal layer and the second p-type work function metal layer.
12. The transistor of claim 10 , wherein the p-type work function material comprises fluorine.
13. The transistor of claim 12 , wherein the p-type work function material comprises a first region having a higher concentration of fluorine than the second region of the p-type work function material, wherein the discrete pockets of tungsten are disposed between the first region and the second region.
14. The transistor of claim 10 , wherein the gate electrode further comprises:
an adhesion layer over the p-type work function material; and
a fill metal over the adhesion layer.
15. The transistor of claim 10 , wherein a combination of the gate dielectric and the p-type work function material completely fills a region spanning from the first nanostructure to the second nanostructure.
16. A method comprising:
depositing a first p-type work function metal over a gate dielectric;
performing a fluorine treatment on the first p-type work function metal, wherein the fluorine treatment comprises flowing a precursor that comprises fluorine and a metal, and wherein fluorine from the fluorine treatment diffuses into the gate dielectric; and
after performing the fluorine treatment, depositing a second p-type work function metal over the first p-type work function metal, wherein the fluorine treatment forms a residue of the metal that is disposed between the first p-type work function metal and the second p-type work function metal.
17. The method of claim 16 , wherein the metal is tungsten, nickel, titanium, or tantalum.
18. The method of claim 16 , wherein the fluorine treatment further comprises not flowing a chemical that triggers a reduction oxidation reaction with the precursor.
19. The method of claim 16 , wherein the fluorine treatment is performed at a temperature in a range of 250° C. to 475° C.
20. The method of claim 16 , wherein depositing the second p-type work function metal comprises depositing the second p-type work function metal until it seams together between a first nanostructure and a second nanostructure, wherein the gate dielectric surrounds the first nanostructure and the second nanostructure.