IP Library Granted Patent US 12,289,549
Granted Patent B2
US 12,289,549 · App. 17/983,693 · Granted Apr 29, 2025

Image sensor with charge transfer between pixels

Inventors: Xianmin Yi (Menlo Park, CA); Alexander Lu (San Jose, CA); Carol Zhao (Milpitas, CA)
Assignee: FAIRCHILD IMAGING, INC
H04N25/713
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,289,549
App. No.
17/983,693
Granted
Apr 29, 2025
Kind
B2
Abstract

Image sensor systems are disclosed that allow for charge transfer between pixels of a group included in a pixel array with a single digital readout of the accumulated charge from the group. Each of the pixels within a given group includes a photodetector. One or more pump gates are arranged between adjacent pixels of the given group to allow charge to be pumped from one pixel to the next in a serial fashion within the group. A readout circuit that includes at least a transfer gate and a capacitor may be coupled to a final pixel of the group to receive the accumulated charge and generate a photodetector signal (based on the accumulated charge) that can be amplified via a source follower component and ultimately read out to a column amplifier.

Claims (35)

1. A charge coupled device (CCD), comprising:

a first pixel comprising a first photodetector;

a second pixel comprising a second photodetector;

a first pump gate and a second pump gate coupled in series between the first pixel and the second pixel;

a transfer gate having an input coupled to the second photodetector of the second pixel; and

a capacitor coupled to an output of the transfer gate.

2. The CCD of claim 1 , further comprising a reset switch coupled to the output of the transfer gate.

3. The CCD of claim 1 , wherein the output of the transfer gate is coupled to a gate of a FET.

4. The CCD of claim 1 , wherein each of the first pump gate and the second pump gate includes a FET and a potential barrier.

5. The CCD of claim 4 , wherein the potential barrier is a PN diode or a PIN diode.

6. The CCD of claim 1 , further comprising a third pixel comprising a third photodetector and a third pump gate and a fourth pump gate coupled in series between the third pixel and the first pixel.

7. The CCD of claim 6 , further comprising a first reset switch coupled to the first photodetector, a second reset switch coupled to the second photodetector, and a third reset switch coupled to the third photodetector.

8. An image sensor, comprising:

a pixel array having at least one column of addressable pixels, wherein the at least one column of addressable pixels includes at least a first pixel having a first photodetector and a second pixel having a second photodetector;

a first pump gate and a second pump gate coupled in series between the first pixel and the second pixel; and

a readout circuit including a transfer gate having an input coupled to the second photodetector of the second pixel, and a capacitor coupled to an output of the transfer gate.

9. The image sensor of claim 8 , further comprising:

a column amplifier coupled to the readout circuit;

an analog-to-digital converter (ADC) coupled to the column amplifier; and

a processor coupled to the ADC.

10. The image sensor of claim 8 , wherein the readout circuit further comprises a reset switch coupled to the output of the transfer gate.

11. The image sensor of claim 8 , wherein the output of the transfer gate is coupled to a gate of a FET.

12. The image sensor of claim 8 , wherein each of the first pump gate and the second pump gate includes a FET and a potential barrier.

13. The image sensor of claim 12 , wherein the potential barrier is a PN diode or a PIN diode.

14. The image sensor of claim 8 , wherein the pixel array further comprises a third pixel comprising a third photodetector, and the image sensor further comprises a third pump gate and a fourth pump gate coupled in series between the third pixel and the first pixel.

15. The image sensor of claim 14 , further comprising a first reset switch coupled to the first photodetector, a second reset switch coupled to the second photodetector, and a third reset switch coupled to the third photodetector.

16. A charge coupled device (CCD), comprising:

a plurality of pixels each having a photodetector;

a plurality of pump gate blocks, each pump gate block being between a pair of pixels of the plurality of pixels, each pump gate block comprising a first pump gate coupled in series with a second pump gate;

a transfer gate having an input coupled to the photodetector of one pixel of the plurality of pixels; and

a capacitor coupled to an output of the transfer gate.

17. The CCD of claim 16 , wherein the output of the transfer gate is coupled to a gate of a FET.

18. The CCD of claim 16 , wherein each of the first pump gate and the second pump gate includes a FET and a potential barrier.

19. The CCD of claim 18 , wherein the potential barrier is a PN diode or a PIN diode.

20. The CCD of claim 16 , further comprising a plurality of reset switches with each reset switch coupled to a corresponding photodetector of the plurality of pixels.

Assignments (3)
CHANGE OF NAME Recorded Dec 6, 2024
From: BAE SYSTEMS IMAGING SOLUTIONS INC.
To: FAIRCHILD IMAGING, INC.
Reel/Frame 069531/0646 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE SHOULD BE BAE SYSTEMS IMAGING SOLUTIONS INC. NO COMMA AFTER THE WORD SOLUTIONS. PREVIOUSLY RECORDED AT REEL: 061707 FRAME: 0396. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jan 26, 2023
From: YI, XIANMIN; LU, ALEXANDER; ZHAO, CAROL
To: BAE SYSTEMS IMAGING SOLUTIONS INC.
Reel/Frame 062515/0274 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2022
From: YI, XIANMIN; LU, ALEXANDER; ZHAO, CAROL
To: BAE SYSTEMS IMAGING SOLUTIONS INC.
Reel/Frame 061707/0396 →
Continuity (1)
Related Publication 20240155262A1 · May 9, 2024
References Cited (19)
US 7626626B2 · Panicacci · 2009 [cited by applicant]
US 7952629B2 · Cieslinski · 2011 [cited by applicant]
US 8785831B2 · Krymski · 2014 [cited by applicant]
US 9041842B2 · Willassen · 2015 [cited by applicant]
US 9210345B2 · Lahav et al. · 2015 [cited by applicant]
US 9332200B1 · Hseih et al. · 2016 [cited by applicant]
US 9554071B2 · Panicacci · 2017 [cited by applicant]
US 9942502B2 · Borremans · 2018 [cited by applicant]
US 10192911B2 · Agranov et al. · 2019 [cited by applicant]
US 11239267B2 · Agranov et al. · 2022 [cited by applicant]
US 20050082582A1 · Rhodes · 2005 [cited by examiner]
US 20100097508A1 · Yanagita et al. · 2010 [cited by applicant]
US 20140226047A1 · Lahav · 2014 [cited by examiner]
US 20190252428A1 · Ma et al. · 2019 [cited by applicant]
US 20220337774A1 · Oh · 2022 [cited by applicant]
WO 2022225948A1 · 2022 [cited by applicant]
Ma et al., A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor, Jan. 12, 2015 (Jan. 12, 2015); [Retrieved from URL: https://ieeexplore.ieee.org/documen/7006672]; [Retrieved from onllne on Jan. 4, … [cited by applicant]
Velichko et al., Low Noise High Efficiency 3.75 m and 2.8 m Global Shutter CMOS Pixel Arrays, 2013 (2013); [Retrieved from URL: https/www.Imagesensors.org/Past%20Workshops/2013%20Workshop/2013%20Papers/12-1_015-Vellchko… [cited by applicant]
International Search Report, PCT/US23/79085, mailed Mar. 1, 2024, 11 pages. [cited by applicant]