IP Library Granted Patent US 12,300,708
Granted Patent B2
US 12,300,708 · App. 17/572,106 · Granted May 13, 2025

Gapless image sensor packages and related methods

Inventor: Swarnal Borthakur (Boise, ID)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14623H01L27/14621H01L27/14627H01L27/14632H01L27/14685
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Quick Facts
Patent No.
US 12,300,708
App. No.
17/572,106
Granted
May 13, 2025
Kind
B2
Abstract

Implementations of image sensor packages may include: an image sensor die including a first largest planar side and a second largest planar side; an optically transmissive cover including a first largest planar side and a second largest planar side where the second largest planar side coupled to the first largest planar side of the image sensor die using an adhesive; and a light block material that fully covers edges of the image sensor die located between the first largest planar side and the second largest planar side of the image sensor die and fully covers edges of the optically transmissive cover between the first largest planar side and the second largest planar side of the optically transmissive cover. The light block material may extend across a portion of the first largest planar side and second largest planar side of the optically transmissive cover.

Claims (43)

1. An image sensor package comprising:

an image sensor die comprising a first largest planar side and a second largest planar side;

an optically transmissive cover comprising a first largest planar side and a second largest planar side, the second largest planar side coupled to the first largest planar side of the image sensor die using an adhesive;

a light block material that fully covers edges of the image sensor die located between the first largest planar side and the second largest planar side of the image sensor die and fully covers edges of the optically transmissive cover between the first largest planar side and the second largest planar side of the optically transmissive cover; and

a plurality of bumps surrounded by the light block material;

wherein the light block material extends across a portion of the first largest planar side of the optically transmissive cover;

wherein a width of the first largest planar side of the optically transmissive cover is equal to a width of the second largest planar side of the optically transmissive cover;

wherein an entirety of the first largest planar side of the optically transmissive cover is planar; and

wherein the light block material extends across a portion of the second largest planar side of the image sensor die.

2. The package of claim 1 , further comprising a second light block material that extends across a portion of the second largest planar side of the optically transmissive cover.

3. The package of claim 1 , further comprising a microlens array wherein the microlens array is formed only of an organic material.

4. The package of claim 1 , wherein the light block material extends fully across the entire second largest planar side of the image sensor die except at a location of each of the plurality of bumps.

5. The package of claim 1 , wherein the plurality of bumps are electrically coupled with the image sensor portion of the image sensor die through one or more through silicon vias and a redistribution layer.

6. The package of claim 1 , further comprising a second die bonded to the second side of the image sensor die and wherein the light block material fully covers edges of the second die located between a first largest planar side and a second largest planar side of the second die.

7. An image sensor package comprising:

an image sensor die comprising a first largest planar side and a second largest planar side;

an optically transmissive cover comprising a first largest planar side and a second largest planar side opposite the first largest planar side, the second largest planar side coupled to the first largest planar side of the image sensor die using an adhesive;

an air gap coupled between the optically transmissive cover and the image sensor die; and

a light block material that fully covers edges of the image sensor die located between the first largest planar side and the second largest planar side of the image sensor die and fully covers edges of the optically transmissive cover between the first largest planar side and the second largest planar side of the optically transmissive cover;

wherein a width of the first largest planar side of the optically transmissive cover is equal to a width of the second largest planar side of the optically transmissive cover;

wherein an entirety of the first largest planar side of the optically transmissive cover is planar;

wherein the light block material extends across a portion of the first largest planar side of the optically transmissive cover; and

wherein the light block material extends across a portion of the second largest planar side of the image sensor die.

8. The package of claim 7 , further comprising a second light block material that extends across a portion of the second largest planar side of the optically transmissive cover.

9. The package of claim 7 , further comprising a microlens array wherein the microlens array is formed only of an organic material.

10. The package of claim 7 , further comprising a plurality of bumps surrounded by the light block material.

11. The package of claim 7 , wherein the light block material extends fully across the entire second largest planar side of the image sensor die except at a location of each of a plurality of bumps.

12. The package of claim 7 , wherein a plurality of bumps are electrically coupled with the image sensor portion of the image sensor die through one or more through silicon vias and a redistribution layer.

13. The package of claim 7 , further comprising a second die bonded to the second side of the image sensor die and wherein the light block material fully.

14. An image sensor package comprising:

an image sensor die comprising a first largest planar side and a second largest planar side;

an optically transmissive cover comprising a first largest planar side and a second largest planar side, the second largest planar side coupled to the first largest planar side of the image sensor die using an adhesive;

a low refractive index layer coupled between the adhesive and the image sensor die; and

a light block material that fully covers edges of the image sensor die located between the first largest planar side and the second largest planar side of the image sensor die and fully covers edges of the optically transmissive cover between the first largest planar side and the second largest planar side of the optically transmissive cover;

wherein the semiconductor package is a gapless image sensor package;

wherein the light block material extends across a portion of the first largest planar side of the optically transmissive cover; and

wherein the light block material extends across a portion of the second largest planar side of the image sensor die.

15. The package of claim 14 , further comprising a microlens array wherein the microlens array is formed only of an organic material. covers edges of the second die located between a first largest planar side and a second largest planar side of the second die.

16. The package of claim 14 , wherein a plurality of bumps are electrically coupled with the image sensor portion of the image sensor die through one or more through silicon vias and a redistribution layer.

17. The package of claim 1 , wherein the light blocking material comprises a first portion coupled to an entirety of a sidewall of the optically transmissive cover and a second portion that extends across the first largest planar side of the optically transmissive cover, wherein the first portion and the second portion of the light blocking material are separately formed.

18. The package of claim 6 , wherein a widest width of the second die, a widest width of the image sensor die, and a widest width of the optically transmissive cover are all equal.

19. The package of claim 7 , wherein the light blocking material comprises a first portion coupled to an entirety of a sidewall of the optically transmissive cover and a second portion that extends across the first largest planar side of the optically transmissive cover, wherein the first portion and the second portion of the light blocking material are separately formed.

20. The package of claim 14 , wherein a widest width of the second die, a widest width of the image sensor die, and a widest width of the optically transmissive cover are all equal.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 059847, FRAME 0433 Recorded Nov 9, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 065525/0001 →
SECURITY INTEREST Recorded May 3, 2022
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 059847/0433 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2022
From: BORTHAKUR, SWARNAL
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 058607/0308 →