Self-limiting thick film positive temperature coefficient of resistivity (PTCR) resistor compositions
The present disclose provides a sol-gel paste composition of matter that is provided for application to a substrate to form an electrically conductive coating which can be used, for example, as a resistor in a thick-film resistive heater, which a positive temperature coefficient of resistivity (PTCR) as a consequence of the electronic properties of the electrically conductive semiconductors used in the resistor layer and which exhibits self-limiting behavior at elevated temperatures. The composition includes a sol gel solution in which up to 90% by weight (wt. %) of the solution is comprised of conductive and insulative powders in a uniform stable solution.
1. A thick film heating device, comprising:
a) a substrate;
b) at least one dielectric coating located directly on said substrate;
c) an electrically conducting resistive inorganic sol gel coating located directly on said dielectric coating, said inorganic sol gel coating having disbursed throughout the sol gel coating doped semiconductor particles of at least one type, said doped semiconductor particles of at least one type having either a perovskite crystal structure or a tungsten-bronze crystal structure and exhibiting a positive thermal coefficient of resistivity above a threshold switching temperature, and
conductive nanowires or conductive nanorods, or both, to facilitate electrical conduction between said at least one type of semiconductive particles through said electrically conducting resistive inorganic sol gel coating; and
d) at least two electrical conductor strips located along a peripheral edge of said electrically conducting resistive inorganic sol gel coating, either directly on the inorganic sol gel coating or between the peripheral edge of the inorganic sol gel coating and a peripheral edge of the dielectric coating, the least two electrical conductor strips being connectable to a power supply for providing electrical power to said electrically conducting resistive inorganic sol gel coating.
2. The thick film heating device according to claim 1 , further comprising said doped semiconductor particles of at least one type having conductive particles bound to an outer surface of said one or more types of doped semiconductor particles.
3. The thick film heating device according to claim 1 , wherein said doped semiconductor particles of at least one type have a perovskite crystal structure and are selected from the group consisting of BaTiO 3 , KNbOs, SrTiO 3 , CaTeO 3 , SrTeO 3 , BaTeO 3 , SrNbO 3 , KNaNbO 3 and combinations thereof.
4. The thick film heating device according to claim 1 , wherein said doped semiconductor particles of at least one type have a tungsten-bronze crystal structure and are any one of BaNb 2 O 6 , Sr 2 KNb 5 O 15 , Ba 4 Na 2 Nb 10 O 20 and combinations thereof.
5. The thick film heating device according to claim 4 , wherein said doped semiconductor particles of any one of BaNb 2 O 6 , Sr 2 KNb 5 O 15 , Ba 4 Na 2 Nb 10 O 20 and combinations thereof are combined with TiO 2 powder and sintered in a reducing environment at a temperature in a range from about 900° C. to about 1450° C., or from about 1200° C. to about 1375° C., to produce electrically conductive phases within the sintered semiconductor powder formulation.
6. The thick film heating device according to claim 1 , wherein said conductive nanorods or conductive nanowires, or both, are comprised of one or more of Ag, Cu, Ni, Au, Al, Fe, Pd, Pt, Si, TiO 2 , ZnO, RuO 2 , indium-tin oxide (ITO), and Cu—Ni nanorods and/or nanowires with a core-shell structure comprised of a copper nanowire or nanorod onto which one or more atomic layers of nickel has been deposited, and wherein a mass fraction of the Cu—Ni nanorods to the doped semiconductor particles in the semiconductor powder ranges from about 10 wt. % to about 60 wt. %, or
about 25 wt. % to about 55 wt. %, or
about 40 wt. % to about 50 wt. %.
7. The thick film heating device according to claim 1 , wherein the conductive nanowires and/or conductive nanorods are carbon nanotubes doped to reduce the intrinsic band gap of the carbon nanotube; or
single wall carbon nanotubes or multi-wall carbon nanotubes having a mass fraction to the doped semiconductor particles in a range from about 1.5 wt. % to about 30 wt. %.
8. The thick film heating device according to claim 1 , wherein the conductive nanowires and/or conductive nanorods have a length ranging from about 1 μm to about 50 μm, or
about 2 μm to about 20 μm, or
about 5 μm to 10 about μm; and
have an aspect ratio ranging from about 1 to about 500, or
about 2 to 200, or
about 3 to 100.
9. A sol-gel paste, comprising:
a liquid sol-gel having disbursed throughout
i) doped semiconductor particles of at least one type, said doped semiconductor particles of at least one type having either a perovskite crystal structure or a tungsten-bronze crystal structure and exhibiting a positive thermal coefficient of resistivity above a threshold switching temperature, and
ii) conductive nanowires or conductive nanorods, or both, to facilitate electrical conduction between said at least one type of doped semiconductive particles.
10. The sol-gel paste according to claim 9 , further comprising said doped semiconductor particles of at least one type having conductive particles bound to an outer surface of said one or more types of doped semiconductor particles.
11. The sol-gel paste according to claim 9 , wherein said doped semiconductor particles of at least one type have a perovskite crystal structure and are selected from the group consisting of BaTiO 3 , KNbO 3 , SrTiO 3 , CaTeO 3 , SrTeO 3 , BaTeO 3 , SrNbO 3 , KNaNbO 3 and combinations thereof.
12. The sol-gel paste according to claim 9 , wherein said doped semiconductor particles of at least one type have a tungsten-bronze crystal structure and are selected from the group consisting of BaNb 2 O 6 , Sr 2 KNb 5 O 15 , Ba 4 Na 2 Nb 10 O 20 and combinations thereof.
13. The sol-gel paste according to claim 12 , wherein said doped semiconductor particles of any one of BaNb 2 O 6 , Sr 2 KNb 5 O 15 , Ba 4 Na 2 Nb 10 O 20 and combinations thereof are combined with TiO 2 powder and sintered in a reducing environment at a temperature in a range from about 900° C. to about 1450° C., or from about 1200° C. to about 1375° C., to produce electrically conductive phases within the sintered semiconductor powder formulation.
14. The sol-gel paste according to claim 9 , wherein said conductive nanorods or conductive nanowires, or both, are comprised of one or more of Ag, Cu, Ni, Au, Al, Fe, Pd, Pt, Si, TiO 2 , ZnO, RuO 2 , indium-tin oxide (ITO), or Cu—Ni nanorods and/or nanowires with a core-shell structure comprised of a copper nanowire or nanorod onto which one or more atomic layers of nickel has been deposited, and wherein a mass fraction of the Cu—Ni nanorods to the doped semiconductor particles in the semiconductor powder ranges from about 10 wt. % to about 60 wt. %, or
about 25 wt. % to about 55 wt. %, or
about 40 wt. % to about 50 wt. %; and
said conductive nanorods and/or conductive nanowires having a length ranging from about 1 μm to about 50 μm, or
about 2 μm to about 20 μm, or
about 5 μm to 10 about μm; and
have an aspect ratio ranging from about 1 to about 500, or
about 2 to 200, or
about 3 to 100.
15. The sol-gel paste according to claim 9 , wherein the conductive nanowires and/or conductive nanorods are carbon nanotubes doped to reduce the intrinsic band gap of the carbon nanotube; or
single wall carbon nanotubes or multi-wall carbon nanotubes having a mass fraction to the doped semiconductor particles in a range from about 1.5 wt. % to about 30 wt. %.