Semiconductor package with improved interposer structure
A semiconductor package is provided. The semiconductor package includes a redistribution structure, a semiconductor die, and an interposer structure. The interposer structure includes an insulating base having a first surface facing the semiconductor die and a second surface opposite to the first surface and conductive features formed over the insulating base. The conductive features include first portions on the first surface of the insulating base and vertically overlapping the semiconductor die, second portions on the first surface of the insulating base and located outside a projection area of the semiconductor die in a top view, third portions on the second surface of the insulating base and vertically overlapping the semiconductor die, and fourth portions on the second surface of the insulating base and located outside the projection area of the semiconductor die in the top view. The interposer structure includes capping layers and dielectric features.
1. A semiconductor package, comprising:
a redistribution structure;
a semiconductor die disposed over the redistribution structure; and
an interposer structure connected to the redistribution structure through connectors, wherein the interposer structure comprises:
an insulating base having a first surface facing the semiconductor die and a second surface opposite to the first surface;
conductive features formed over the insulating base, wherein the conductive features comprises:
first portions formed on the first surface of the insulating base and vertically overlapping the semiconductor die, wherein the first portions are laterally separated from each other and are vertically spaced apart from the semiconductor die;
second portions formed on the first surface of the insulating base and located outside a projection area of the semiconductor die in a top view;
third portions formed on the second surface of the insulating base and vertically overlapping the semiconductor die; and
fourth portions formed on the second surface of the insulating base and located outside the projection area of the semiconductor die in the top view;
capping layers covering the first portions of the conductive features; and
dielectric features in contact with the capping layers and vertically overlapping the semiconductor die.
2. The semiconductor package as claimed in claim 1 , wherein the interposer structure further comprises:
a passivation layer formed over the second surface of the insulating base, wherein the third portions of the conductive features are covered by the passivation layer.
3. The semiconductor package as claimed in claim 1 , further comprising:
an encapsulating layer formed between the interposer structure and the redistribution structure, wherein a portion of the encapsulating layer is laterally sandwiched between each of the capping layers.
4. The semiconductor package as claimed in claim 3 , wherein the encapsulating layer is vertically sandwiched between the capping layers and the semiconductor die.
5. The semiconductor package as claimed in claim 3 , wherein the encapsulating layer is in physical contact with the capping layers, the semiconductor die, and the connectors and is separated from the first portions of the conductive features by the capping layers.
6. The semiconductor package as claimed in claim 1 , wherein the capping layers are partially sandwiched between the first portions of the conductive features and the dielectric features.
7. The semiconductor package as claimed in claim 1 , wherein the interposer structure further comprises:
through vias formed through the insulating base and connecting the second portions and the fourth portions of the conductive features.
8. The semiconductor package as claimed in claim 1 , wherein each of the first portions is covered by one of the capping layers separated from each other.
9. A semiconductor package, comprising:
a redistribution structure;
a semiconductor die disposed over the redistribution structure and connected to the redistribution structure through first connectors;
an underfill material formed around the first connectors and partially covering sidewalls of the semiconductor die;
an encapsulating layer formed around the semiconductor die and the underfill material; and
an interposer structure disposed over the encapsulating layer, wherein the interposer structure comprises:
an insulating base having a first surface and a second surface opposite to the first surface;
through vias formed through the insulating base;
first conductive features formed on the first surface of the insulating base, wherein the first conductive features are aligned and spaced apart from each other in a first direction and overlap the semiconductor die in a second direction;
capping layers covering the first conductive features, wherein the capping layers are spaced apart from the semiconductor die in the second direction; and
dielectric features partially covering the capping layers and spaced apart from the first conductive features by the capping layers.
10. The semiconductor package as claimed in claim 9 , wherein each of the first conductive features has a first sidewall surface facing the semiconductor die, a second sidewall surface in contact with the first surface of the insulating base, a third sidewall surface connecting the first sidewall surface and the second sidewall surface at a first side, and a fourth sidewall surface connecting the first sidewall surface and the second sidewall surface at a second side, and the second sidewall surface, the third sidewall surface, and the fourth sidewall surface are covered by one of the capping layers.
11. The semiconductor package as claimed in claim 10 , wherein each of the capping layers is spaced apart from each other in the first direction.
12. The semiconductor package as claimed in claim 9 , wherein the first conductive features are separated from the encapsulating layer.
13. The semiconductor package as claimed in claim 9 , wherein the dielectric features overlap the semiconductor die and the first connectors in the second direction.
14. The semiconductor package as claimed in claim 9 , further comprising:
second conductive features formed at the first surface of the insulating base and connecting to the through vias; and
second connectors connecting the second conductive features and the redistribution structure.
15. The semiconductor package as claimed in claim 14 , wherein top surfaces of the second connectors are higher than a top surface of the semiconductor die.
16. The semiconductor package as claimed in claim 14 , wherein the second connectors comprise curved sidewall surfaces in contact with the encapsulating layer.
17. A semiconductor package, comprising:
an interposer structure, comprising:
an insulating base having a first surface, a second surface opposite to the first surface, a third surface connecting the first surface and the second surface at a first side, and a fourth surface connecting the first surface and the second surface at a second side;
through vias formed in the insulating base and extending from the first surface of the insulating base to the second surface of the insulating base;
first conductive features formed on the first surface of the insulating base, wherein each of the first conductive features is spaced apart from each other;
capping layers covering the first conductive features, wherein each of the capping layers is spaced apart from each other;
second conductive features formed on the second surface of the insulating base; and
a passivation layer covering the second conductive features, wherein the passivation layer has a first continuous surface covering the second conductive features, a second surface in contact with the second surface of the insulating base, and the first continuous surface of the passivation layer has a first width being wider than a second width of each of the capping layers in a cross-sectional view;
a redistribution structure below the interposer structure;
a semiconductor die disposed over the redistribution structure and vertically overlapping the first conductive features and the second conductive features; and
an encapsulating layer sandwiched between the interposer structure and the semiconductor die and between the interposer structure and the redistribution structure.
18. The semiconductor package as claimed in claim 17 , wherein the interposer structure further comprises:
dielectric features in contact with the capping layers and vertically overlaps the semiconductor die.
19. The semiconductor package as claimed in claim 17 , wherein the first width of the first continuous surface of the passivation layer is wider than a third width of the semiconductor die in the cross-sectional view.
20. The semiconductor package as claimed in claim 17 , wherein the third surface of the insulating base is substantially aligned with a sidewall surface of the encapsulating layer.