Solar cell and photovoltaic module
A solar cell and a photovoltaic module is disclosed. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.
1. A solar cell, comprising:
a silicon substrate having a front surface and a back surface arranged opposite to each other;
P-type conductive regions and N-type conductive regions that are alternately arranged on the back surface of the silicon substrate;
front surface field regions located on the front surface of the silicon substrate and spaced from each other, wherein each front surface field region corresponds to a corresponding conductive region of the P-type conductive regions or a corresponding conductive region of the N-type conductive regions;
at least one front passivation layer located on the front surface of the silicon substrate; and
at least one back passivation layer located on surfaces of the P-type conductive regions and the N-type conductive regions,
wherein the front surface field regions each have a width in a range from 200 μm to 600 μm, and
wherein spacing regions are formed between adjacent ones of the P-type conductive regions and the N-type conductive regions.
2. The solar cell according to claim 1 , wherein, along a direction perpendicular to a plane of the silicon substrate, projections of the spacing regions are within corresponding projections of the front surface field regions.
3. The solar cell according to claim 1 , wherein the spacing regions each have a width in a range from 20 μm to 150 μm.
4. The solar cell according to claim 1 , wherein the width of each front surface field region is greater than a sum of a width of the corresponding conductive region of the P-type conductive regions or the corresponding conductive region of the N-type conductive regions, and
wherein a width of each of the spacing regions at two sides of the corresponding conductive region of the P-type conductive regions or the corresponding conductive region of the N-type conductive regions ranges from 0 μm to 50 μm.
5. The solar cell according to claim 1 , wherein, along a direction perpendicular to a plane of the silicon substrate, projections of the spacing regions do not overlap with projections of the front surface field regions.
6. The solar cell according to claim 1 , wherein the silicon substrate is an N-type substrate, and the front surface field regions each correspond to one of the N-type conductive regions.
7. The solar cell according to claim 6 , wherein, along a direction perpendicular to a plane of the silicon substrate, each projection of the P-type conductive regions adjacent to the corresponding conductive region of the N-type conductive regions is partially within a projection of the front surface field regions corresponding to the corresponding conductive region of the N-type conductive regions.
8. The solar cell according to claim 1 , wherein the silicon substrate is a P-type substrate, and the front surface field regions each correspond to one of the P-type conductive regions.
9. The solar cell according to claim 8 , wherein, along a direction perpendicular to a plane of the silicon substrate, projections of the N-type conductive regions adjacent to the P-type conductive regions are partially within a projection of a front surface field region corresponding to the corresponding conductive region of the P-type conductive regions.
10. The solar cell according to claim 1 , wherein a total area of the front surface field regions accounts for 45% to 60% of an area of the front surface of the silicon substrate.
11. The solar cell according to claim 1 , wherein the front surface field regions have a doping concentration in a range from 5E18 cm −3 to 5E19 cm −3 .
12. The solar cell according to claim 1 , wherein the front surface field regions have a doping junction depth in a range from 20 nm to 150 nm.
13. The solar cell according to claim 1 , wherein the front surface field regions have a sheet resistance ranging from 300 Ω/sqr to 1300 Ω/sqr.
14. The solar cell according to claim 1 , further comprising:
at least one dielectric layer formed over the back surface of the silicon substrate and located on surfaces of the P-type conductive regions and the N-type conductive regions facing away from the at least one back passivation layer; and
at least one anti-reflection layer formed over a surface of the at least one front passivation layer facing away from the silicon substrate.
15. The solar cell according to claim 14 , wherein the at least one dielectric layer has a thickness in a range from 0.5 nm to 2 nm.
16. The solar cell according to claim 14 , wherein the at least one anti-reflection layer has a thickness in a range from 40 nm to 100 nm.
17. The solar cell according to claim 1 , wherein the at least one front passivation layer has a thickness in a range from 3 nm to 30 nm.
18. The solar cell according to claim 1 , wherein the at least one front passivation layer has a thickness in a range from 40 nm to 100 nm.
19. A photovoltaic module, comprising: at least one solar cell string each formed by a plurality of solar cells through an electrical connection, wherein at least one solar cell of the plurality of solar cells comprises:
a silicon substrate having a front surface and a back surface arranged opposite to each other;
P-type conductive regions and N-type conductive regions alternately arranged on the back surface of the silicon substrate;
front surface field regions located on the front surface of the silicon substrate and spaced from each other, wherein each front surface field region corresponds to a corresponding conductive region of the P-type conductive regions or a corresponding conductive region of the N-type conductive regions;
at least one front passivation layer located on the front surface of the silicon substrate; and
at least one back passivation layer located on surfaces of the P-type conductive regions and the N-type conductive regions,
wherein the front surface field regions each have a width in a range from 200 μm to 600 μm, and
wherein spacing regions are formed between adjacent ones of the P-type conductive regions and the N-type conductive regions.
20. The photovoltaic module according to claim 19 , wherein the spacing regions each have a width in a range from 20 μm to 150 μm.