Substrate processing system and substrate processing method
A substrate processing system includes: a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; an interface processing device configured to process an interface where the first substrate and a second substrate are bonded in the peripheral portion; a periphery removing device configured to remove the peripheral portion starting from the modification layer; a position detection device configured to detect a position of the modification layer or a position of the interface; and a control device configured to control the modification layer forming device and the interface processing device. The control device controls the position of the interface based on the detected position of the modification layer, or controls the position of the modification layer based on the detected position of the interface.
1. A substrate processing method of processing a substrate, comprising:
forming a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, wherein the modification layer serves as a starting point of removing the peripheral portion of the first substrate; and
performing a predetermined processing for reducing a bonding force at an interface where the first substrate and a second substrate are bonded to each other in the peripheral portion,
wherein in the forming of the modification layer, the modification layer is formed more inwards in a diametric direction than a position corresponding to an end of the interface processed in the performing of the predetermined processing on the interface.
2. A substrate processing system that performs the substrate processing method according to claim 1 , the substrate processing system comprising:
a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, wherein the modification layer serves as a starting point of removing the peripheral portion of the first substrate;
an interface processing device configured to perform a predetermined processing for reducing a bonding force at an interface where the first substrate and a second substrate are bonded to each other in the peripheral portion; and
a control device configured to control the modification layer forming device and the interface processing device,
wherein the control device is further configured to control the modification layer forming device to form the modification layer more inwards in a diametric direction than a position corresponding to an end of the interface processed in the interface processing device.
3. The substrate processing system of claim 2 ,
wherein the interface processed in the interface processing device is disposed inside of the first substrate.
4. The substrate processing system of claim 2 ,
wherein a device layer including a plurality of devices is formed on a bonding surface of the first substrate to be bonded to the second substrate, and
the interface processed in the interface processing device is disposed inside of the device layer.
5. The substrate processing system of claim 2 ,
wherein the interface processing device is further configured to modify the interface.
6. The substrate processing system of claim 2 , further comprising:
a periphery removing device configured to remove the peripheral portion of the first substrate, starting from the modification layer.
7. The substrate processing system of claim 2 ,
wherein the control device is further configured to form the modification layer such that a lower end of the modification layer is located above a target surface of the first substrate after being ground.
8. The substrate processing system of claim 2 ,
wherein the control device is further configured to:
form the modification layer into a plurality of stages in a thickness direction of the first substrate, and
form the modification layer such that a lower end of a lowermost modification layer of the plurality of stages of the modification layer is located above a target surface of the first substrate after being ground.
9. The substrate processing method of claim 1 ,
wherein the interface processed in the performing of the predetermined processing is disposed inside of the first substrate.
10. The substrate processing method of claim 1 ,
wherein a device layer including a plurality of devices is formed on a bonding surface of the first substrate to be bonded to the second substrate, and
the interface processed in the performing of the predetermined processing is disposed inside of the device layer.
11. The substrate processing method of claim 1 ,
wherein in the performing of the predetermined processing on the interface, the interface is modified.
12. The substrate processing method of claim 1 , further comprising:
removing the peripheral portion, starting from the modification layer.
13. The substrate processing method of claim 1 ,
wherein in the forming of the modification layer, the modification layer is formed such that a lower end of the modification layer is located above a target surface of the first substrate after being ground.
14. The substrate processing method of claim 1 ,
wherein in the forming of the modification layer,
the modification layer is formed into a plurality of stages in a thickness direction of the first substrate, and
the modification layer is formed such that a lower end of a lowermost modification layer of the plurality of stages of the modification layer is located above a target surface of the first substrate after being ground.