Interconnection for monolithically integrated stacked devices and methods of forming thereof
A monolithic integrated device may include a first device having a complementary metal-oxide-semiconductor (CMOS) substrate, and a second device arranged over the CMOS substrate. The second device may include a first conductive element, and a second conductive element arranged over the first conductive element. A via opening may extend through the first conductive element and the second conductive element of the second device to an interconnect of the CMOS substrate. A via contact may be arranged in the via opening to contact the first conductive element, the second conductive element, and the interconnect of the CMOS substrate. The via contact electrically connects the first conductive element and the second conductive element of the second device to the interconnect of the CMOS substrate.
1. A monolithic integrated device, comprising:
a first device comprising an interconnect and an interlevel dielectric layer surrounding the interconnect, the interconnect comprising a contact pad or a top metal of the first device;
a second device arranged over the first device, wherein the second device comprises:
a first conductive element; and
a second conductive element arranged over the first conductive element;
a via opening extending through the first conductive element and the second conductive element of the second device to the interconnect of the first device, wherein the via opening through the first conductive element has a first via width and the via opening through the second conductive element has a second via width wider than the first via width; and
a via contact arranged in the via opening to contact the first conductive element, the second conductive element, and the interconnect of the first device; wherein the via contact electrically connects the first conductive element and the second conductive element of the second device to the interconnect of the first device.
2. The monolithic integrated device of claim 1 , wherein the via contact lines the via opening.
3. The monolithic integrated device of claim 1 , wherein the first via width extends to the interconnect of the first device; wherein the second via width extends to a top surface of the first conductive element; and the via opening further comprising a third via width wider than the second via width extending to a top surface of the second conductive element.
4. The monolithic integrated device of claim 1 , wherein the via opening further comprises at least one extension region to increase a contact area of at least one of the first conductive element and the second conductive element for the via contact.
5. The monolithic integrated device of claim 4 , wherein the via opening having the at least one extension region comprises a triangular shape or a flat oval shape.
6. The monolithic integrated device of claim 1 , further comprising one or more additional via openings arranged adjacent to a device area of the second device; and further comprising respective via contacts arranged therein.
7. The monolithic integrated device of claim 1 , wherein the second device comprises a transducer.
8. The monolithic integrated device of claim 7 , wherein the second device comprises a sensor and the first device comprises a complementary metal-oxide-semiconductor (CMOS) device which is a device fabricated using CMOS technology.
9. The monolithic integrated device of claim 1 , wherein the first conductive element is a patterned bottom electrode, and wherein the second conductive element is a patterned top electrode.
10. The monolithic integrated device of claim 9 , wherein the second device further comprises a piezoelectric layer arranged between the patterned top electrode and the patterned bottom electrode.
11. The monolithic integrated device of claim 10 , wherein piezoelectric material of the piezoelectric layer is receded with respect to the first conductive element and the second conductive element in the via opening.
12. The monolithic integrated device of claim 1 , wherein the second device further comprises a device layer disposed over an interposer layer, wherein the interposer layer is disposed over the interlevel dielectric layer of the first device.
13. The monolithic integrated device of claim 12 , wherein the first conductive element is disposed in the device layer and second conductive element is disposed in or on the device layer with the first conductive element vertically spaced apart from the second conductive element.
14. The monolithic integrated device of claim 12 , wherein the interposer layer of the second device is disposed in contact with the interlevel dielectric layer of the first device.
15. The monolithic integrated device of claim 12 , wherein the first device further comprises a lower layer, and wherein the interconnect and the interlevel dielectric layer are arranged on the lower layer.
16. The monolithic integrated device of claim 3 , wherein the via opening exposes the top surfaces and sidewalls of the first conductive element and/or the second conductive element.
17. A method of forming a monolithic integrated device, comprising:
providing a second device over a first device comprising an interconnect and an interlevel dielectric layer surrounding the interconnect, the interconnect comprising a contact pad or a top metal of the first device,
wherein the second device comprises a first conductive element, and a second conductive element arranged over the first conductive element;
forming a via opening extending through the first conductive element and the second conductive element of the second device to the interconnect of the first device, wherein the via opening through the first conductive element has a first via width and the via opening through the second conductive element has a second via width wider than the first via width; and
forming a via contact in the via opening to contact the first conductive element, the second conductive element, and the interconnect of the first device; wherein the via contact electrically connects the first conductive element and the second conductive element of the second device to the interconnect of the first device.
18. The method of claim 17 , wherein the via contact lines the via opening.
19. The method of claim 17 , wherein the first via width extends to the interconnect of the first device; wherein the second via width extends to a top surface of the first conductive element; and the via opening further comprising a third via width wider than the second via width to extend to a top surface of the second conductive element.
20. The method of claim 17 , wherein the via opening further comprises at least one extension region to increase a contact area of at least one of the first conductive element and the second conductive element for the via contact.