Circuit and system for actively discharging a power stage input node during power supply turn-on
A circuit for controlling a discharge transistor for a power stage includes a current mirror, a first diode, and a second diode. The current mirror includes first, second, third and fourth field-effect transistors (FETs) configured to provide a fast startup signal and a startup discharge signal. The startup discharge signal is provided to a gate of the discharge transistor. The first diode is configured to limit the fast startup signal to a first maximum voltage less than the supply voltage, and the second diode is configured to limit the startup discharge signal to a second maximum voltage less than the supply voltage.
1. A circuit comprising:
a current mirror including:
a first field-effect transistor (FET) having a first drain, a first gate, and a first source, wherein:
the first source is coupled with a supply voltage; and
the first gate is coupled to the first drain and to a ground through a resistance element;
a second FET having a second source coupled with the supply voltage, a second gate coupled with the first gate and the first drain, and a second drain configured to provide a fast startup signal;
a third FET having a third source coupled with the supply voltage, a third gate coupled with the first gate and the first drain, and a third drain; and
a fourth FET having a fourth drain coupled with the third drain, a fourth gate coupled with the fast startup signal, and a fourth source configured to provide a startup discharge signal to a gate of a discharge transistor;
a first diode connected in series between the second drain and the ground, wherein the first diode is configured to limit the fast startup signal to a first maximum voltage less than a maximum allowed supply voltage; and
a second diode connected in series between the fourth source and the ground, wherein the second diode is configured to limit the startup discharge signal to a second maximum voltage less than the maximum allowed supply voltage.
2. The circuit of claim 1 , further comprising:
A fifth FET configured in series between the ground and the resistance element having a fifth gate coupled with a slow control voltage, wherein during turn-on the slow control voltage rises slower than the supply voltage.
3. The circuit of claim 2 , wherein the fifth FET is a p-channel metal-oxide-semiconductor (PMOS) transistor.
4. The circuit of claim 2 , wherein the fifth FET is configured to turn off the current mirror when the slow control voltage rises above a threshold voltage.
5. The circuit of claim 2 , wherein the slow control voltage is provided by a charge pump.
6. The circuit of claim 1 , further comprising:
a high-side power FET having a drain coupled with the supply voltage;
wherein the discharge transistor has a drain coupled with a gate of the high-side power FET, a source coupled with the ground, and the gate of the discharge transistor is coupled with the startup discharge signal; and
wherein the discharge transistor and is configured to discharge the gate of the high-side power FET when activated.
7. The circuit of claim 1 , wherein the first, second, and third FETs are p-channel metal-oxide-semiconductor (PMOS) transistors, and the fourth FET is a natural n-channel metal-oxide-semiconductor (NMOS) transistor.
8. The circuit of claim 1 , wherein the first and second diodes comprise n-channel metal-oxide-semiconductor (NMOS) transistors each having a gate and a drain coupled together in a diode configuration.
9. The circuit of claim 1 , wherein the first diode includes four first diodes coupled in series and the second diode includes three second diodes coupled in series.
10. The circuit of claim 1 , wherein the startup discharge signal is also provided to at least one logic gate configured to avoid turning on the discharge transistor during an electrostatic discharge (ESD) event.
11. A circuit, comprising:
a first field-effect transistor (FET) having a first drain, a first gate, and a first source, wherein:
the first source is coupled with a supply voltage; and
the first gate is coupled to the first drain and to a ground through a resistance element;
a second FET having a second source coupled with the supply voltage, a second gate coupled with the first gate and the first drain, and a second drain coupled to the ground through a first diode, wherein the second drain is configured to provide a fast startup signal;
a third FET having a third source coupled with the supply voltage, a third gate coupled with the first gate and first drain, and a third drain; and
a fourth FET having a fourth drain coupled with the third drain, a fourth gate coupled with the fast startup signal, and a fourth source coupled to the ground through a second diode, wherein the fourth source is configured to provide a startup discharge signal to a gate of a discharge transistor.
12. The circuit of claim 11 , further comprising:
A fifth FET configured in series between the ground and the resistance element having a fifth gate coupled with a slow control voltage, wherein during turn-on the slow control voltage rises slower than the supply voltage.
13. The circuit of claim 12 , wherein the fifth FET is a p-channel metal-oxide-semiconductor (PMOS) transistor.
14. The circuit of claim 12 , wherein the fifth FET is configured to turn off when the slow control voltage rises above a threshold voltage.
15. The circuit of claim 12 , wherein the slow control voltage is provided by a charge pump.
16. The circuit of claim 11 , further comprising:
a high-side power FET having a drain coupled with the supply voltage;
wherein the discharge transistor has a drain coupled with a gate of the high-side power FET, a source coupled with the ground, and the gate of the discharge transistor is coupled with the startup discharge signal; and
wherein the discharge transistor is configured to discharge the gate of the high-side power FET when activated.
17. The circuit of claim 11 , wherein the first, second, and third FETs are p-channel metal-oxide-semiconductor (PMOS) transistors, and the fourth FET is a natural n-channel metal-oxide-semiconductor (NMOS) transistor.
18. The circuit of claim 11 , wherein the first and second diodes comprise n-channel metal-oxide-semiconductor (NMOS) transistor each having a gate and a drain coupled together in a diode configuration.
19. The circuit of claim 11 , further comprising:
four first diodes coupled in series, and configured to limit the fast startup signal to a first maximum voltage less than a maximum allowed supply voltage; and
three second diodes coupled in series, and configured to limit the startup discharge signal to a second maximum voltage less than the maximum allowed supply voltage.
20. A circuit comprising:
a power switch comprising a high-side power field-effect transistor (FET) having a drain coupled with a supply voltage;
a gate driver configured to provide a high-side gate signal to a gate of the high-side power FET, the gate driver comprising:
a discharge transistor having a drain coupled with the gate of the high-side power FET, a source coupled with a ground, and a gate coupled with a startup discharge signal, wherein in response to the startup discharge signal, the discharge transistor is configured to discharge the gate of the high-side power FET;
a power supply configured to provide a slow control voltage, wherein during turn-on the slow control voltage rises slower than the supply voltage; and
a startup module coupled with the power supply and the gate driver, the startup module comprising:
a first FET having a first drain, a first gate, and a first source, wherein:
the first source is coupled with the supply voltage; and
the first gate is coupled to the first drain and to a ground through a resistance element;
a second FET having a second source coupled with the supply voltage, a second gate coupled with the first gate and the first drain, and a second drain coupled to the ground through a first diode, wherein the second drain is configured to provide a fast startup signal;
a third FET having a third source coupled with the supply voltage, a third gate coupled with the first gate and first drain, and a third drain;
a fourth FET having a fourth drain coupled with the third drain, a fourth gate coupled with the fast startup signal, and a fourth source coupled to the ground through a second diode, wherein the fourth source is configured to provide the startup discharge signal to the gate of the discharge transistor; and
a fifth FET configured in series between the ground and the resistance element having a fifth gate coupled to the slow control voltage.