Silicon-based integrated optical chip
View Patent ↗The present invention provides a silicon-based integrated optical chip integrating a silicon-based optical modulator and a germanium-silicon detector and a preparation method thereof. A position and dimension of a silicon nitride waveguide are defined by a slot formed by using an etching process, then surplus silicon nitride is removed by means of chemico-mechanical polishing, and an optical waveguide is formed by the silicon nitride in the slot. Therefore, the preparation of the silicon nitride waveguide according to the present invention can be compatible with a process for preparing the silicon-based integrated optical chip including the silicon-based optical modulator and the germanium-silicon detector, and a distance between the silicon nitride waveguide and the silicon waveguide may be controlled flexibly, so that controllable coupling strength and coupling loss between the silicon waveguide and the silicon nitride waveguide are implemented; and the silicon waveguide at a bottom layer and the silicon nitride waveguide at an upper layer may be used to design in combination various passive devices with better performance, for example, a coupler with lower coupling loss and a waveguide with lower transmission loss.
1. A method for producing a silicon-based integrated optical chip which integrates a silicon-based optical modulator and a germanium-silicon detector therein, comprising:
producing a PN junction and a silicon waveguide of the silicon-based optical modulator on an SOI wafer, and growing a germanium layer of the germanium-silicon detector;
depositing an interlayer dielectric on the PN junction, the silicon waveguide and the germanium layer, and performing chemical-mechanical polishing of the interlayer dielectric;
etching the interlayer dielectric to form a slot;
depositing a silicon nitride material on the interlayer dielectric so that the slot is filled with a part of the silicon nitride material; and
removing the silicon nitride material other than in the slot by grinding, so as to form a silicon nitride waveguide by the silicon nitride material in the slot,
wherein the slot is formed just above the silicon waveguide of the silicon-based optical modulator.
2. The method for producing the silicon-based integrated optical chip according to claim 1 , wherein after forming the silicon nitride waveguide, the method further comprising:
depositing a silicon dioxide material to form a silicon dioxide layer for covering the PN junction and the silicon waveguide of the silicon-based optical modulator, the germanium layer of the germanium-silicon detector and the silicon nitride waveguide.
3. The method for producing the silicon-based integrated optical chip according to claim 2 , wherein the PN junction and the silicon waveguide are produced on the SOI wafer by using a CMOS process, while growing the germanium layer of the germanium-silicon detector.
4. The method for producing the silicon-based integrated optical chip according to claim 2 , wherein the silicon nitride material is deposited on the interlayer dielectric by a plasma enhanced chemical vapor deposition.