Silicon nitride waveguide coupled photodiode
A photodiode structure including a silicon substrate, an oxide layer on the silicon substrate, a silicon on insulator region on the oxide layer, a germanium absorption region, a silicon nitride waveguide, a cathode region, and an anode region is provided. The germanium absorption region is at least partially disposed in a recess of the silicon on insulator region. The germanium absorption region includes a top surface having a first width and a bottom surface having a second width, the first width being greater than the second width. The cathode region is formed at a first side of the germanium absorption region, and the anode region is formed at a second side of the germanium absorption region that is opposite the first side.
1. A photodiode structure comprising:
a silicon substrate;
an oxide layer on the silicon substrate;
a silicon on insulator region on the oxide layer;
a germanium absorption region at least partially disposed in a recess of the silicon on insulator region, the germanium absorption region comprising a top surface having a first width and a bottom surface having a second width, the first width being greater than the second width;
a cathode region formed at a first side of the germanium absorption region;
an anode region formed at a second side of the germanium absorption region opposite the first side; and
a silicon nitride waveguide positioned adjacent the first side of the germanium absorption region over the cathode region or adjacent the second side of the germanium absorption region over the anode region.
2. The photodiode structure of claim 1 , wherein the germanium absorption region further comprises a bottom portion that conforms in shape to a shape of the recess of the silicon on insulator region.
3. The photodiode structure of claim 2 , wherein the bottom portion of the germanium absorption region has trapezoidal cross-section, and the germanium absorption regions further comprises a top portion having a rectangular cross-section.
4. The photodiode structure of claim 1 , wherein the anode region, the cathode region, and the germanium absorption region form a PIN photodiode.
5. The photodiode structure of claim 1 , further comprising a charge region adjacent to the germanium absorption region, and an intrinsic multiplication region adjacent to the charge region such that the cathode region is adjacent to the intrinsic multiplication region.
6. The photodiode structure of claim 5 , wherein the anode region, the cathode region, the charge region, the intrinsic multiplication region, and the germanium absorption region form a separate absorption, charge and multiplication avalanche photodiode.
7. The photodiode structure of claim 1 , further comprising cathode electrical contacts positioned on an extended silicon on insulator region.
8. The photodiode structure of claim 1 , further comprising anode electrical contacts positioned on an extended silicon on insulator region.
9. The photodiode structure of claim 1 , further comprising N type doping positioned under the silicon nitride waveguide.
10. The photodiode structure of claim 1 , further comprising P type doping positioned under the silicon nitride waveguide.
11. The photodiode structure of claim 1 , further comprising a metal reflector positioned above the germanium absorption region to enhance light coupling efficiency.
12. A method of forming a photodiode, comprising the steps of:
providing a silicon substrate;
depositing silicon dioxide on the silicon substrate to form a bottom oxide layer;
forming a thin silicon on insulator layer on a portion of the bottom oxide layer;
epitaxially growing a germanium absorption region on the silicon on insulator layer such that the germanium absorption region is at least partially disposed in a recess of the silicon on insulator layer, the germanium absorption region comprising a top surface having a first width and a bottom surface having a second width, the first width being greater than the second width;
implanting N type doped regions in the bottom oxide layer adjacent a first side of the germanium absorption region;
implanting P type doped regions in the bottom oxide layers adjacent a second side of the germanium absorption region;
fabricating a nitride waveguide adjacent the first side of the germanium absorption region over the N type doped regions or adjacent the second side of the germanium absorption region over the P type doped regions; and
forming anode and cathode contacts.
13. The method of claim 12 , wherein the germanium absorption region further comprises a bottom portion that conforms in shape to a shape of the recess of the silicon on insulator region.
14. The method of claim 13 , wherein the bottom portion of the germanium absorption region has trapezoidal cross-section, and the germanium absorption regions further comprises a top portion having a rectangular cross-section.
15. The method of claim 12 , wherein before the step of epitaxially growing, further comprising the steps of:
forming a charge region adjacent to the silicon on insulator layer; and
forming an intrinsic multiplication region adjacent to the charge region such that the charge region is located between the intrinsic multiplication region and the silicon on insulator layer.
16. The method of claim 12 , wherein the step of implanting N type doped regions comprises:
implanting an N+ type doped region in the bottom oxide layer adjacent a first side of the germanium absorption region; and
implanting an N++ type doped region in the bottom oxide layer adjacent an end of the N+ type doped region;
wherein the N+ type doped region has a length greater than a length of the germanium absorption region and is positioned such that the N++ type doped region is offset from a first end of the germanium absorption region.
17. The method of claim 16 , wherein the step of implanting P type doped regions comprises:
implanting a P+ type doped region in the bottom oxide layer adjacent a second side of the germanium absorption region; and
implanting a P++ type doped region in the bottom oxide layer adjacent an end of the P+ type doped region;
wherein the P+ type doped region has a length greater than a length of the germanium absorption region and is positioned such that the P++ type doped region is offset from a second end of the germanium absorption region.
18. The method of claim 17 , wherein the anode contacts are formed in the P++ type doped region and the cathode contacts are formed in the N++ type doped region.
19. The method of claim 12 , wherein the nitride waveguide is fabricated via selective etching and either plasma enhanced chemical vapor deposition or low-pressure chemical vapor deposition.
20. The method of claim 12 , further comprising providing a metal reflector positioned above the germanium absorption region to enhance light coupling efficiency.