Acoustic wave device with mass loading strip having tapered sidewall
Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.
1. An acoustic wave device comprising:
a piezoelectric layer;
an interdigital transducer electrode over the piezoelectric layer, the interdigital transducer electrode including a bus bar and fingers extending from the bus bar, the fingers each including an edge portion and a body portion;
a temperature compensation layer over the interdigital transducer electrode; and
a mass loading strip having a bottom side, an top side, and a sidewall extending between the bottom side and the top side, the top side being shorter than the bottom side, the sidewall tapered inwardly from the bottom side to the top side, the mass loading strip overlapping the edge portions of the fingers, a portion of the temperature compensation layer being positioned between the mass loading strip and the piezoelectric layer.
2. The acoustic wave device of claim 1 wherein the mass loading strip includes a layer having a density that is at least as high as a most dense layer of a material of the interdigital transducer electrode.
3. The acoustic wave device of claim 2 wherein the mass loading strip consists of the layer.
4. The acoustic wave device of claim 2 wherein the material of the interdigital transducer electrode includes tungsten and the layer of the mass loading strip includes tungsten.
5. The acoustic wave device of claim 2 wherein the mass loading strip includes a second layer.
6. The acoustic wave device of claim 5 wherein the second layer of the mass loading strip includes titanium.
7. The acoustic wave device of claim 5 wherein the second layer of the mass loading strip is positioned between the layer of the mass loading strip and the interdigital transducer electrode, and the second layer of the mass loading strip has higher adhesion than the layer of the mass loading strip.
8. The acoustic wave device of claim 7 wherein the sidewall includes a sidewall of the layer and a sidewall of the second layer.
9. The acoustic wave device of claim 8 wherein only one of the sidewall of the layer or the sidewall of the second layer is tapered.
10. The acoustic wave device of claim 7 wherein the layer is narrower than the second layer.
11. The acoustic wave device of claim 1 wherein the mass loading strip is embedded in the temperature compensation layer.
12. The acoustic wave device of claim 1 wherein the top side of the mass loading strip is at least 3% shorter than the bottom side of the mass loading strip.
13. The acoustic wave device of claim 1 wherein the sidewall is tapered inwardly from the bottom side to the top side at an angle between the bottom side and the sidewall of between 50 degrees and 60 degrees.
14. The acoustic wave device of claim 1 wherein the temperature compensation layer is a silicon dioxide layer.
15. The acoustic wave device of claim 1 further comprising a silicon nitride layer over the temperature compensation layer.
16. An acoustic wave device comprising:
a piezoelectric layer;
an interdigital transducer electrode over the piezoelectric layer, the interdigital transducer electrode including a bus bar and fingers extending from the bus bar, the fingers each including an edge portion and a body portion;
a temperature compensation layer over the interdigital transducer electrode; and
a mass loading strip having a bottom side, an top side, and a sidewall extending between the bottom side and the top side, the top side being shorter than the bottom side, an angle between the bottom side and the sidewall being at least 10 degrees and less than 90 degrees, the mass loading strip overlapping the edge portions of the fingers, a portion of the temperature compensation layer being positioned between the mass loading strip and the piezoelectric layer.
17. The acoustic wave device of claim 16 wherein the angle between the bottom side and the sidewall is between 50 degrees and 60 degrees.
18. An acoustic wave device comprising:
a piezoelectric layer;
an interdigital transducer electrode over the piezoelectric layer, the interdigital transducer electrode including a bus bar and fingers extending from the bus bar, the fingers each including an edge portion and a body portion;
a temperature compensation layer over the interdigital transducer electrode; and
a mass loading strip having a bottom side, an top side, and a sidewall extending between the bottom side and the top side, the sidewall shaped so as to mitigate formation of a void in the temperature compensation layer along the sidewall, the top side being shorter than the bottom side, the mass loading strip overlapping the edge portions of the fingers, a portion of the temperature compensation layer being positioned between the mass loading strip and the piezoelectric layer.
19. The acoustic wave device of claim 18 wherein the top side of the mass loading strip is at least 3% shorter than the bottom side of the mass loading strip.
20. The acoustic wave device of claim 18 wherein sidewall is tapered inwardly from the bottom side to the top side at an angle between the bottom side and the sidewall of between 50 degrees and 60 degrees.