Transformer-based Marchand Balun amplifier for wireless communication
An amplifier includes a first and a second differential input ports, and a single-ended output port. The amplifier includes a first and a second transistors, each having a gate, source, and drain terminals. The source terminals are coupled to a reference plane and the gate terminals are coupled to the respective first and second differential input ports. The amplifier includes a Balun having a primary and a secondary transformer winding, the primary transformer winding having one end coupled to the drain terminal of the first transistor, an opposite end coupled to the drain terminal of the second transistor, and a center tap coupled to a bias voltage, and the secondary transformer winding is adjacent to the primary transformer winding and having one end coupled to the single-ended output port and an opposite end open circuited. An electromagnetic field generated at the primary induces a signal at the secondary transformer winding.
1. A single-stage amplifier, comprising:
a first and a second differential input ports, and a single-ended output port;
a first transistor with a first gate, first source, and first drain terminals, wherein the first source terminal is coupled to a reference plane and the first gate terminal is coupled to the first differential input port;
a second transistor with a second gate, second source, and second drain terminals, wherein the second source terminal is coupled to the reference plane and the second gate terminal is coupled to the second differential input port; and
a Balun co-designed with the amplifier, the Balun comprising:
a primary transformer winding having one end coupled to the first drain terminal of the first transistor, an opposite end coupled to the second drain terminal of the second transistor, and a center tap coupled to a bias voltage; and
a secondary transformer winding adjacent to the primary transformer winding and having one end coupled to the single-ended output port and an opposite end open circuited, wherein an electromagnetic field generated at the primary transformer winding induces a signal at the secondary transformer winding, wherein the primary transformer winding of the Balun co-designed with the amplifier serves as a matching transformer for the first and second transistors of the amplifier, wherein an operating frequency bandwidth of the amplifier is approximately 3.45 Gigahertz (GHz) to 19.05 GHz.
2. The amplifier of claim 1 , wherein the primary transformer winding of the Balun is divided into a first and a second intermediate transformer windings by the center tap and the first and second intermediate transformer windings are quarter wavelength windings.
3. The amplifier of claim 2 , wherein the first and second intermediate transformer windings are planar transmission lines and the first intermediate transformer winding is at an opposite end from the second intermediate transformer winding to reduce self-coupling between the first and second intermediate transformer windings.
4. The amplifier of claim 1 , wherein the Balun is an on-chip transformer-based Marchand Balun and the first and second transistors of the amplifier are on-chip components.
5. The amplifier of claim 1 , wherein the primary and secondary transformer windings are transmission lines at a signal plane separate from the reference plane.
6. The amplifier of claim 5 , wherein the signal plane is a metal layer or two or more metal layers.
7. The amplifier of claim 1 , wherein the primary transformer winding of the Balun comprises two quarter wavelength transmission lines of a first line length and the secondary transformer winding of the Balun comprises a half wavelength transmission line of the first line length or a second line length.
8. The amplifier of claim 1 , where the primary transformer winding of the Balun comprises two quarter wavelength transmission lines of a first line thickness and the secondary transformer winding of the Balun comprises a half wavelength transmission line of the first line thickness or a second line thickness.
9. The amplifier of claim 1 , wherein the amplifier is an intermediate frequency variable gain amplifier of a transceiver.
10. The amplifier of claim 9 , wherein the amplifier amplifies a signal in a signal chain of a transceiver.
11. A radio frequency (RF) transceiver comprising an intermediate amplifier to amplify a differential signal, the intermediate amplifier comprising:
a first and a second differential input ports, and a single-ended output port;
a first transistor with a first gate, first source, and first drain terminals, wherein the first source terminal is coupled to a reference plane and the first gate terminal is coupled to the first differential input port;
a second transistor with a second gate, second source, and second drain terminals, wherein the second source terminal is coupled to the reference plane and the second gate terminal is coupled to the second differential input port; and
a Balun co-designed with the amplifier, the Balun comprising:
a primary transformer winding having one end coupled to the first drain terminal of the first transistor, an opposite end coupled to the second drain terminal of the second transistor, and a center tap coupled to a bias voltage; and
a secondary transformer winding adjacent to the primary transformer winding and having one end coupled to the single-ended output port and an opposite end open circuited, wherein an electromagnetic field generated at the primary transformer winding induces a signal at the secondary transformer winding, wherein the primary transformer winding of the Balun co-designed with the amplifier serves as a matching transformer for the first and second transistors of the amplifier, wherein an operating frequency bandwidth of the amplifier is approximately 3.45 Gigahertz (GHz) to 19.05 GHz.
12. The RF transceiver of claim 11 , wherein the primary transformer winding of the Balun is divided into a first and a second intermediate transformer windings by the center tap and the first and second intermediate transformer windings are quarter wavelength windings.
13. The RF transceiver of claim 12 , wherein the first and second intermediate transformer windings are planar transmission lines and the first intermediate transformer winding is at an opposite end from the second intermediate transformer winding to reduce self-coupling between the first and second intermediate transformer windings.
14. The RF transceiver of claim 11 , wherein the Balun is an on-chip transformer-based Marchand Balun and the first and second transistors of the amplifier are on-chip components.
15. The RF transceiver of claim 11 , wherein the primary and secondary transformer windings are transmission lines at a signal plane separate from the reference plane.
16. The RF transceiver of claim 15 , wherein the signal plane is a metal layer or two or more metal layers.
17. The RF transceiver of claim 11 , wherein the primary transformer winding of the Balun comprises two quarter wavelength transmission lines of a first line length and the secondary transformer winding of the Balun comprises a half wavelength transmission line of the first line length or a second line length.
18. The RF transceiver of claim 11 , where the primary transformer winding of the Balun comprises two quarter wavelength transmission lines of a first line thickness and the secondary transformer winding of the Balun comprises a half wavelength transmission line of the first line thickness or a second line thickness.
19. The RF transceiver of claim 11 , wherein the amplifier is an intermediate frequency variable gain amplifier of a transceiver.
20. A radio frequency (RF) frontend comprising:
one or more RF transceivers, each RF transceiver having an intermediate amplifier to amplify a differential signal, the intermediate amplifier comprising:
a first and a second differential input ports, and a single-ended output port;
a first transistor with a first gate, first source, and first drain terminals, wherein the first source terminal is coupled to a reference plane and the first gate terminal is coupled to the first differential input port;
a second transistor with a second gate, second source, and second drain terminals, wherein the second source terminal is coupled to the reference plane and the second gate terminal is coupled to the second differential input port; and
a Balun co-designed with the amplifier, the Balun comprising:
a primary transformer winding having one end coupled to the first drain terminal of the first transistor, an opposite end coupled to the second drain terminal of the second transistor, and a center tap coupled to a bias voltage; and
a secondary transformer winding adjacent to the primary transformer winding and having one end coupled to the single-ended output port and an opposite end open circuited, wherein an electromagnetic field generated at the primary transformer winding induces a signal at the secondary transformer winding, wherein the primary transformer winding of the Balun co-designed with the amplifier serves as a matching transformer for the first and second transistors of the amplifier, wherein an operating frequency bandwidth of the amplifier is approximately 3.45 Gigahertz (GHz) to 19.05 GHz.