IP Library Granted Patent US 12,371,616
Granted Patent B2
US 12,371,616 · App. 18/209,563 · Granted Jul 29, 2025

Quantum dots and device including the same

Inventors: Seon-Yeong Kim (Suwon-si, KR); Yong Wook Kim (Yongin-si, KR); Soo Kyung Kwon (Suwon-si, KR); Ji-Yeong Kim (Suwon-si, KR); Sungwoo Hwang (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
C09K11/883C01B19/04C01G9/006C09K11/70C09K11/703C09K11/7414H10K50/115B82Y20/00B82Y40/00C01P2004/64C01P2006/60H10K2102/00
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Quick Facts
Patent No.
US 12,371,616
App. No.
18/209,563
Granted
Jul 29, 2025
Kind
B2
Abstract

A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

Claims (48)

1. A quantum dot comprising:

a semiconductor nanocrystal particle comprising a Group IIB-VI compound; and

a coating disposed on the semiconductor nanocrystal particle,

wherein the quantum dot does not comprise cadmium,

the coating comprises a material comprising a Group IIB-V compound, and

wherein a quantum efficiency of the quantum dot is greater than or equal to about 60%.

2. The quantum dot of claim 1 , wherein the material exhibits a crystallinity lower than the semiconductor nanocrystal particle, as determined by a transmission electron microscope.

3. The quantum dot of claim 1 , wherein the quantum dot does not comprise a Group III-V compound comprising an indium phosphide.

4. The quantum dot of claim 1 , wherein the semiconductor nanocrystal particle comprises a crystal of a zinc chalcogenide.

5. The quantum dot of claim 1 , wherein the Group IIB-VI compound comprises a zinc chalcogenide and the Group IIB-V compound comprises zinc and phosphorus.

6. The quantum dot of claim 5 , wherein in the quantum dot, a mole ratio of phosphorus to zinc is greater than or equal to about 0.015:1 and less than or equal to about 0.9:1.

7. The quantum dot of claim 5 , wherein in the quantum dot, a mole ratio of phosphorus to zinc is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1.

8. The quantum dot of claim 1 , wherein the quantum dot comprises zinc, selenium, tellurium, and sulfur, and the Group IIB-V compound comprises phosphorus.

9. The quantum dot of claim 8 , wherein in the quantum dot,

a mole ratio of tellurium to selenium is greater than or equal to about 0.1:1 and less than or equal to about 4:1;

a mole ratio of tellurium to zinc is greater than or equal to about 0.02:1 and less than or equal to about 1:1;

a mole ratio of sulfur to tellurium is greater than 0:1 and less than or equal to about 8:1; or

a mole ratio of phosphorus to tellurium is greater than or equal to about 0.5:1 and less than or equal to about 15:1.

10. The quantum dot of claim 7 , wherein in the quantum dot,

a mole ratio of tellurium to selenium is greater than or equal to about 0.2:1 and less than or equal to about 1.8:1;

a mole ratio of tellurium to zinc is greater than or equal to about 0.03:1 and less than or equal to about 0.1:1;

a mole ratio of sulfur to tellurium is greater than or equal to about 0.1:1 and less than or equal to about 7.8:1; or

a mole ratio of phosphorus to tellurium is greater than or equal to about 0.5:1 and less than or equal to about 8:1.

11. The quantum dot of claim 7 , wherein in the quantum dot,

a mole ratio of sulfur with respect to selenium is greater than 0:1 and less than or equal to about 8:1; or

a mole ratio of zinc to a sum of selenium and sulfur is greater than or equal to about 1:1 and less than or equal to about 30:1.

12. The quantum dot of claim 7 , wherein in the quantum dot,

a mole ratio of sulfur with respect to selenium is greater than 0:1 to about 5.5:1; and

a mole ratio of zinc to a sum of selenium and sulfur is from about 1:1 to about 3.5:1.

13. The quantum dot of claim 7 , wherein in the quantum dot,

a mole ratio of phosphorus with respect to selenium is greater than or equal to about 0.1:1 and less than or equal to about 10:1; or

a mole ratio of phosphorus to tellurium is greater than or equal to about 0.5:1 and less than or equal to about 15:1.

14. The quantum dot of claim 7 , wherein in the quantum dot,

a mole ratio of phosphorus with respect to selenium is greater than or equal to about 0.2:1 and less than or equal to about 3.5:1; or

a mole ratio of phosphorus to tellurium is greater than or equal to about 1:1 and less than or equal to about 6:1.

15. The quantum dot of claim 1 , wherein the semiconductor nanocrystal particle comprises a second semiconductor nanocrystal layer comprising zinc, selenium, and optionally sulfur.

16. The quantum dot of claim 1 , wherein the semiconductor nanocrystal particle comprises a first semiconductor nanocrystal layer comprising zinc, selenium, and tellurium.

17. The quantum dot of claim 1 , wherein

the quantum dot is configured to emit light, and a wavelength of the light is from about 440 nanometers to about 580 nanometers.

18. The quantum dot of claim 17 , wherein the quantum dot exhibits a full width at half maximum of less than or equal to 45 nanometers.

19. The quantum dot of claim 1 , wherein the quantum efficiency of the quantum dot is greater than or equal to about 70%, or

wherein the quantum dot exhibits a full width at half maximum of less than or equal to 40 nanometers.

20. A display device comprising

a light emitting element,

wherein the light emitting element comprises a quantum dot of claim 1 .

21. An electroluminescent device comprising:

a first electrode and a second electrode facing each other;

and an active layer disposed between the first electrode and the second electrode and, wherein the active layer comprises a quantum dot of claim 1 .

Priority Claims (1)
KR 10-2020-0134705 · Oct 16, 2020 · national
Continuity (2)
Continuation 17503436 · Oct 18, 2021
Related Publication 20230323204A1 · Oct 12, 2023
References Cited (29)
US 10113109B2 · Gruhlke et al. · 2018 [cited by applicant]
US 10340427B2 · Baesjou et al. · 2019 [cited by applicant]
US 10446782B1 · Han et al. · 2019 [cited by applicant]
US 11718789B2 · Kim · 2023 [cited by examiner]
US 20080247434A1 · Kishino et al. · 2008 [cited by applicant]
US 20100289003A1 · Kahen et al. · 2010 [cited by applicant]
US 20130178047A1 · Harris et al. · 2013 [cited by applicant]
US 20150315721A1 · Zhong et al. · 2015 [cited by applicant]
US 20170052444A1 · Park et al. · 2017 [cited by applicant]
US 20190211262A1 · Park et al. · 2019 [cited by applicant]
US 20200024512A1 · Min et al. · 2020 [cited by applicant]
US 20200313106A1 · Kim et al. · 2020 [cited by applicant]
CN 105940082A · 2016 [cited by applicant]
JP 2008258300A · 2008 [cited by applicant]
JP 2011505432A · 2011 [cited by applicant]
KR 20110069836A · 2011 [cited by applicant]
KR 101203173B1 · 2012 [cited by applicant]
KR 20170080795A · 2017 [cited by applicant]
KR 20170122031A · 2017 [cited by applicant]
KR 20190119433A · 2019 [cited by applicant]
KR 1020200011029A · 2020 [cited by applicant]
WO 2007020416A1 · 2007 [cited by applicant]
WO 2015117876A1 · 2015 [cited by applicant]
Office Action dated May 27, 2024, of the corresponding Chinese Patent Application No. 202111208677.0. [cited by applicant]
Benjamin A. Glassy et al., “Resolving the Chemistry of Zn3P2 Nanocrystal Growth,” Chemistry of Materials, Aug. 10, 2016, pp. 6374-6380, vol. 28, Issue 17. [cited by applicant]
Eun-Pyo Jang et al., “Synthesis of Alloyed ZnSeTe Quantum Dots as Bright, Color-Pure Blue Emitters,” ACS Appl. Mater. Interfaces, Nov. 20, 2019, pp. 46062-46069, vol. 11. [cited by applicant]
Extended European Search Report dated Mar. 23, 2022, of the corresponding European Patent Application No. 21203016.7. [cited by applicant]
Hiroshi Asano et al., “Colloidal Zn(Te,Se)/ZnS Core/Shell Quantum Dots Exhibiting Narrow-Band and Green Photoluminescence,” ACS Omega, Jun. 20, 2018, pp. 6703-6709, vol. 3. [cited by applicant]
Shiding Miao et al., “Synthesis of Monodisperse Cadmium Phosphide Nanoparticles Using ex-Situ Produced Phosphine,” ACS NANO, Jun. 25, 2012, pp. 7059-7065, vol. 6, No. 8. [cited by applicant]