Dual ring resonator systems with thermal isolation, optical performance, and reduced transmission loss and methods thereof
A dual ring resonator including a base substrate, and a silicon oxide layer positioned on the base substrate having a first waveguide, a primary ring resonator optically coupled to the first waveguide, a second waveguide, and a secondary ring resonator optically coupled to the primary ring resonator and the second waveguide. The dual ring resonator further includes at least one heater disposed partially on the primary ring resonator, and a trench within at least the silicon oxide layer and surrounding at least a portion of the first waveguide and the second waveguide.
1. A dual ring resonator comprising:
a base substrate;
a silicon oxide layer positioned on the base substrate;
a first waveguide within the silicon oxide layer;
a primary ring resonator within the silicon oxide layer and optically coupled to the first waveguide;
a second waveguide within the silicon oxide layer;
a secondary ring resonator within the silicon oxide layer and optically coupled to the primary ring resonator and the second waveguide;
at least one heater disposed partially on the primary ring resonator; and
a trench within at least the silicon oxide layer and surrounding at least a portion of the first waveguide and the second waveguide, wherein the trench surrounds a non-heated portion of the primary ring resonator.
2. The dual ring resonator of claim 1 , further comprising:
a coupling coefficient that describes an amount of light coupled from the first waveguide to the primary ring resonator;
a coupling coefficient that describes the amount of light coupled from the second waveguide to the secondary ring resonator; and
a coupling coefficient that describes the amount of light coupled from the primary ring resonator to the secondary ring resonator.
3. The dual ring resonator of claim 1 , wherein the primary ring resonator is heated and the secondary ring resonator is not heated.
4. The dual ring resonator of claim 3 , wherein the trench is less than 75% of the volume of the total of the heated region and the non-heated region within the silicon oxide layer.
5. The dual ring resonator of claim 1 , wherein a depth of the trench is about 4 μm.
6. The dual ring resonator of claim 1 , wherein the heater has a semi-circular shape, and wherein the heater comprises a TiW heating element.
7. The dual ring resonator of claim 1 , wherein the trench comprises circles defined by the primary ring resonator and the secondary ring resonator.
8. The dual ring resonator of claim 1 , wherein the trench is defined by four lobes.
9. The dual ring resonator of claim 1 , wherein:
a difference between a maximum temperature and a minimum temperature of the primary ring resonator is no greater than 40 degrees C.
10. The dual ring resonator of claim 1 , further comprising a first and second interconnect electrically coupled to the heater.
11. A photonics integrated circuit comprising:
a base substrate;
a dual ring resonator positioned on the base substrate, the dual ring resonator comprising:
a silicon oxide layer positioned on the base substrate;
a first waveguide;
a primary ring resonator within the silicon oxide layer and optically coupled to the first waveguide;
a second waveguide within the silicon oxide layer;
a secondary ring resonator within the silicon oxide layer and optically coupled to the primary ring resonator and the second waveguide;
at least one heater disposed partially on the primary ring resonator; and
a trench within at least the silicon oxide layer and surrounding at least a portion of the first waveguide and the second waveguide, wherein the trench surrounds a non-heated portion of the primary ring resonator.
12. The photonics integrated circuit of claim 10 , wherein the primary ring resonator is within a heated region and the secondary ring resonator is within a non-heated region.
13. The photonics integrated circuit of claim 11 , wherein the trench is less than 75% of the volume of the total of the heated region and the non-heated region within the silicon oxide layer.
14. The photonics integrated circuit of claim 10 , wherein a depth of the trench is about 4 μm.
15. The photonics integrated circuit of claim 10 , wherein the heater has a semi-circular shape.
16. The photonics integrated circuit of claim 10 , wherein the heater comprises a TiW heating element.
17. The photonics integrated circuit of claim 10 , wherein the trench is comprised of circles defined by the primary ring resonator and the secondary ring resonator.
18. The photonics integrated circuit of claim 10 , wherein the trench is defined by four lobes.