Display device and manufacturing method thereof
A display device includes a substrate including an opening area, a peripheral area adjacent to the opening area, and a display area adjacent to the peripheral area; a semiconductor layer overlapping the display area, disposed on the substrate, and including a channel; a gate electrode overlapping the channel of the semiconductor layer; an insulating layer disposed on the gate electrode, and including a first inorganic insulating layer and a second inorganic insulating layer disposed on the first inorganic insulating layer; a first electrode disposed on the insulating layer; an emission layer disposed on the first electrode; and a second electrode disposed on the emission layer, wherein the second inorganic insulating layer is not disposed in at least a portion of an open region in which the emission layer and the second electrode are disconnected in the peripheral area.
1. A display device comprising:
a substrate including:
an opening area;
a peripheral area adjacent to the opening area; and
a display area adjacent to the peripheral area;
a semiconductor layer overlapping the display area, disposed on the substrate, and including a channel;
a gate electrode overlapping the channel of the semiconductor layer;
an insulating layer disposed on the gate electrode, and including:
a first inorganic insulating layer; and
a second inorganic insulating layer disposed on the first inorganic insulating layer;
a first electrode disposed on the insulating layer;
an emission layer disposed on the first electrode; and
a second electrode disposed on the emission layer, wherein
the second inorganic insulating layer is not disposed in at least a portion of an open region in which the emission layer and the second electrode are disconnected in the peripheral area,
at least one of the emission layer and the second electrode are spaced apart from a center of the open region from a plan view perspective, the center being half-way between a first edge of the open region facing the opening area and second edge of the open region facing the display area, and
an end of the second inorganic insulating layer corresponds an end of the emission layer or an end of the second electrode in a cross-sectional view.
2. The display device of claim 1 , wherein
the first inorganic insulating layer includes a silicon oxide, and
the second inorganic insulating layer includes a silicon nitride.
3. The display device of claim 2 , wherein the first inorganic insulating layer is continuously disposed throughout the open region.
4. A display device comprising:
a substrate including:
an opening area;
a peripheral area adjacent to the opening area; and
a display area adjacent to the peripheral area:
a semiconductor layer overlapping the display area. disposed on the substrate, and including a channel;
a gate electrode overlapping the channel of the semiconductor layer:
an insulating layer disposed on the gate electrode, and including:
a first inorganic insulating laver; and
a second inorganic insulating layer disposed on the first inorganic insulating layer:
a first electrode disposed on the insulating layer:
an emission layer disposed on the first electrode; and
a second electrode disposed on the emission layer wherein
the second inorganic insulating layer is not disposed in at least a portion of an open region in which the emission layer and the second electrode are disconnected in the peripheral area,
at least one of the emission layer and the second electrode are spaced apart from a center of the open region from a plan view perspective, the center being half-way between a first edge of the open region facing the opening area and second edge of the open region facing the display area,
the peripheral area includes:
a first peripheral area including the open region; and
a second peripheral area including a roundabout portion, and
a data line is disposed on the insulating layer and detours around the roundabout portion.
5. The display device of claim 4 , wherein
the opening area that penetrates through a the display panel is disposed in the first peripheral area, and
the display device further includes a camera disposed in the opening area.
6. The display device of claim 4 , wherein
the first peripheral area includes dams, each of the dams closest to the open region being spaced apart from the open region as seen from a plan view perspective, and
each dam of the dams has a ring shape.
7. The display device of claim 6 , wherein the open region is disposed on sides of at least one dam of the plurality of dams.
8. A display device comprising:
a substrate including:
an opening area;
a peripheral area adjacent to the opening area; and
a display area adjacent to the peripheral area;
a semiconductor layer overlapping the display area, disposed on the substrate, and including a channel;
a gate electrode overlapping the channel of the semiconductor layer;
an insulating layer disposed on the gate electrode, and including:
a first inorganic insulating layer; and
a second inorganic insulating layer disposed on the first inorganic insulating layer;
a first electrode disposed on the insulating layer;
an emission layer disposed on the first electrode; and
a second electrode disposed on the emission layer, wherein
the second inorganic insulating layer is not disposed in at least a portion of an open region in which the emission layer and the second electrode are disconnected in the peripheral area, and
a distance from a topmost surface of the insulating layer facing away from the substrate in the open region and a top surface of the second electrode facing away from the substrate in the peripheral area at an edge of the open region perpendicular to the topmost surface of the insulating layer is 300 nm to 500 nm, and
the peripheral area includes:
a first peripheral area including the open region; and
a second peripheral area including a roundabout portion, and
a data line is disposed on the insulating layer and detours around the roundabout portion.
9. The display device of claim 8 , wherein
the first inorganic insulating layer includes a silicon oxide, and
the second inorganic insulating layer includes a silicon nitride.
10. The display device of claim 9 , wherein the first inorganic insulating layer is continuously disposed throughout the open region.
11. The display device of claim 10 , wherein a thickness of the second inorganic insulating layer is 20 nm to 100 nm.
12. The display device of claim 11 , wherein
the opening area penetrating through a the display panel is disposed in the peripheral area, and
the display device further includes a camera disposed in the opening area.
13. The display device of claim 8 , wherein
the first peripheral area includes at least one dam spaced apart from the open region as seen from a plan view perspective,
the dam has a ring shape, and
the open region is disposed on sides of the at least one dam.
14. The display device of claim 8 , wherein at least one of the emission layer and the second electrode are spaced apart from a center of the open region from a plan view perspective, the center being half-way between a first edge of the open region facing the opening area and second edge of the open region facing the display area.