Memory selector threshold voltage recovery
A method includes applying a first voltage pulse across a memory cell, wherein the memory cell includes a selector, wherein the first voltage pulse switches the selector into an on-state; after applying the first voltage pulse, applying a second voltage pulse across the memory cell, wherein before applying the second voltage pulse the selector has a first voltage threshold, wherein after applying the second voltage pulse the selector has a second voltage threshold that is less than the first voltage threshold; and after applying the second voltage pulse, applying a third voltage pulse across the memory cell, wherein the third voltage pulse switches the selector into an on-state; wherein the selector remains continuously in an off-state between the first voltage pulse and the third voltage pulse.
1. A method comprising:
applying a first voltage between a first word line and a first bit line wherein a magnitude of the first voltage is greater than a first threshold voltage of a first selector that is electrically coupled to the first word line and the first bit line;
after applying the first voltage, applying no voltage between the first word line and the first bit line for a first nonzero duration of time; and
after the first nonzero duration of time, applying a second voltage between the first word line and the first bit line, wherein a magnitude of the second voltage is less than the first threshold voltage, wherein the first voltage and the second voltage have opposite polarities, wherein after applying the second voltage, the first selector has a second threshold voltage that is smaller than the first threshold voltage.
2. The method of claim 1 further comprising, after applying the second voltage, applying a third voltage between the first word line and the first bit line, wherein the third voltage and the second voltage have a same polarity.
3. The method of claim 2 , wherein between applying the second voltage and applying the third voltage, no voltage is applied between the first word line and the first bit line for a second nonzero duration of time.
4. The method of claim 2 , wherein a duration of the second voltage and a duration of the third voltage are different.
5. The method of claim 2 , wherein the magnitude of the second voltage and a magnitude of the third voltage are different.
6. The method of claim 1 , wherein a duration of the second voltage is greater than a duration of the first voltage.
7. The method of claim 1 , wherein the first threshold voltage is greater than the second threshold voltage by a voltage difference in the range of 50 mV to 500 mV.
8. The method of claim 1 , wherein the magnitude of the second voltage is based on a duration of the first nonzero duration of time.
9. The method of claim 1 , wherein the magnitude of the second voltage is based on the magnitude of the first threshold voltage.
10. A method comprising:
applying a first positive voltage pulse across a chalcogenide selector, wherein the first positive voltage pulse turns on the chalcogenide selector;
after applying the first positive voltage pulse, turning off the chalcogenide selector for at least one microsecond;
applying a first negative voltage pulse across the chalcogenide selector, wherein the first negative voltage pulse does not turn on the chalcogenide selector; and
after applying the first negative voltage pulse, applying a second positive voltage pulse across the chalcogenide selector, wherein the second positive voltage pulse turns on the chalcogenide selector.
11. The method of claim 10 further comprising, between applying the first negative voltage pulse and the second positive voltage pulse, applying a second negative voltage pulse across the chalcogenide selector.
12. The method of claim 10 further comprising, between applying the first negative voltage pulse and the second positive voltage pulse, turning off the chalcogenide selector for at least one microsecond.
13. The method of claim 10 , wherein applying the second positive voltage pulse comprises performing a reading operation on a memory cell.
14. The method of claim 10 , wherein applying the first negative voltage pulse reduces a threshold voltage of the chalcogenide selector.
15. The method of claim 10 , wherein a duration of the first negative voltage pulse is shorter than a duration of the first positive voltage pulse.
16. The method of claim 10 , wherein the first positive voltage pulse is a writing operation for a memory cell.
17. A method comprising:
performing a first writing operation on a memory cell, wherein the memory cell comprises an ovonic threshold switching (OTS) layer, wherein the first writing operation comprises a first voltage; and
at least one microsecond after performing the first writing operation, performing a subthreshold stress operation on the memory cell, wherein the subthreshold stress operation comprises a second voltage that is opposite in polarity to the first voltage.
18. The method of claim 17 , wherein the first voltage is greater than a threshold voltage of the OTS layer and the second voltage is less than the threshold voltage of the OTS layer.
19. The method of claim 17 , wherein the OTS layer comprises GeCTe.
20. The method of claim 17 further comprising, after performing the subthreshold stress operation, performing a second writing operation on the memory cell.