Detection device and detection method for detecting whether M.2 device is coupled to M.2 connector
A detection device adapted to a connector is provided herein. The connecter includes a first pin and a second pin, and the first pin and the second pin are physically separated and coupled to a first power respectively. The detection device includes a first transistor, a first resistor, a second transistor, and a bias circuit. The first transistor is coupled between the first pin and the first power. The first resistor is coupled between a gate terminal of the first transistor and the first power. A detection signal is generated at the gate terminal of the first transistor. The second transistor is coupled between the gate terminal of the first transistor and a second power. The bias circuit is coupled between a gate terminal of the second transistor and the first pin.
1. A detection device for detecting whether a device is electrically connected to a connector, wherein the connector comprises a first pin and a second pin, wherein the first pin and the second pin are physically separated and coupled to a first power respectively, wherein the detection device comprises:
a first transistor, coupled between the first pin and the first power;
a first resistor, coupled between a gate terminal of the first transistor and the first power, wherein a detection signal is generated at the gate terminal of the first transistor;
a second transistor, coupled between the gate terminal of the first transistor and a second power; and
a bias circuit, coupled between a gate terminal of the second transistor and the first pin.
2. The detection device as defined in claim 1 , wherein the first power is a supply voltage, the second power is a ground level, the first transistor is a P-channel transistor, and the second transistor is an N-channel transistor.
3. The detection device as defined in claim 2 , wherein the bias circuit comprises:
a second resistor, coupled between the second power and the gate terminal of the second transistor; and
a third resistor, coupled between the gate terminal of the second transistor and the first pin.
4. The detection device as defined in claim 3 , wherein the first transistor and second transistor are turned off in response to a connection state indicating that a device is not electrically connected to the connector.
5. The detection device as defined in claim 4 , wherein the ground level is provided to the gate terminal of the second transistor through the second resistor so as to turn off the second transistor, and the first resistor pulls the detection signal up to the supply voltage so as to turn off the first transistor.
6. The detection device as defined in claim 3 , wherein the first transistor and second transistor are turned on in response to a connection state indicating that the device is electrically connected to the connector.
7. The detection device as defined in claim 6 , wherein the supply voltage is divided by the second resistor and the third resistor through the first pin to turn on the second transistor, and the second transistor pulls the detection signal down to the ground level, wherein the first transistor is turned on according to the detection signal at the ground level.
8. The detection device as defined in claim 1 , wherein the first power is a ground level, the second power is a supply voltage, the first transistor is an N-channel transistor, and the second transistor is a P-channel transistor.
9. The detection device as defined in claim 8 , wherein the bias circuit comprises:
a second resistor, coupled between the second power and the gate terminal of the second transistor, wherein the gate terminal of the second transistor is coupled to the first pin.
10. The detection device as defined in claim 9 , wherein the first transistor and second transistor are turned off in response to a connection state indicating that the device is not electrically connected to the connector.
11. The detection device as defined in claim 10 , wherein the supply voltage is provided to the gate terminal of the second transistor through the second resistor so as to turn off the second transistor, and the first resistor provides the ground level to the gate terminal of the first transistor and the detection signal so as to turn off the first transistor.
12. The detection device as defined in claim 9 , wherein the first transistor and second transistor are turned on in response to a connection state indicating that the device is electrically connected to the connector.
13. The detection device as defined in claim 12 , wherein the ground level is provided to the first pin and the gate terminal of the second transistor through the second pin and the device so as to turn on the second transistor according to the first pin at the ground level, and the gate terminal of the first transistor and the detection signal is pulled up to the supply voltage, wherein the first transistor is turned on according to the detection signal at the supply voltage.
14. The detection device as defined in claim 9 , further comprising:
a fourth resistor, coupled between the second power and a source terminal of the second transistor, wherein a resistance value of the fourth resistor is less than a resistance value of the first resistor.
15. A detection method for detecting whether a device is electrically connected to a connector, wherein the detection method comprises:
detecting whether the device is electrically connected to the connector through one of a plurality of pins to generate a detection signal by a detection device;
determining whether the device is electrically connected to the connector according to the detection signal; and
controlling a power switch to power the device in response to a connection state between the device and the connector;
wherein the connector comprises a first pin and a second pin, wherein the first pin and the second pin are physically separated and coupled to a first power, wherein the detection device comprises:
a first transistor, coupled between the first pin and the first power;
a first resistor, coupled between a gate terminal of the first transistor and the first power, wherein a detection signal is generated at the gate terminal of the first transistor;
a second transistor, coupled between the gate terminal of the first transistor and a second power; and
a bias circuit, coupled between a gate terminal of the second transistor and the first pin.
16. The detection method as defined in claim 15 , wherein the first power is a supply voltage, the second power is a ground level, the first transistor is a P-channel transistor, and the second transistor is an N-channel transistor.
17. The detection method as defined in claim 16 , wherein the bias circuit comprises:
a second resistor, coupled between the second power and a gate terminal of the second transistor; and
a third resistor, coupled between the gate terminal of the second transistor and the first pin.
18. The detection method as defined in claim 17 , wherein when the device is not electrically connected to the connector, the first pin and the second pin are physically separated so that the first pin is in a floating state, the ground level is provided to the gate terminal of the second transistor through the second resistor so as to turn off the second transistor, and the first resistor pulls the detection signal up to the supply voltage so as to turn off the first transistor.
19. The detection method as defined in claim 17 , wherein when the device is electrically connected to the connector, the supply voltage is provided to the first pin through the second pin and the device, the supply voltage is divided by the second resistor and the third resistor through the first pin to turn on the second transistor, and the second transistor pulls the detection signal down to the ground level, wherein the first transistor is turned on according to the detection signal at the ground level.
20. The detection method as defined in claim 15 , wherein the first power is a ground level, the second power is a supply voltage, the first transistor is an N-channel transistor, and the second transistor is a P-channel transistor.
21. The detection method as defined in claim 20 , wherein the bias circuit comprises:
a second resistor, coupled between the second power and the gate terminal of the second transistor, wherein the gate terminal of the second transistor is coupled to the first pin.
22. The detection method as defined in claim 21 , wherein when the device is not electrically connected to the connector, the first pin and the second pin are physically separated so that the first pin is in a floating state, the supply voltage is provided to the gate terminal of the second transistor through the second resistor so as to turn off the second transistor, and the first resistor provides the ground level to the gate terminal of the first transistor and the detection signal so as to turn off the first transistor.
23. The detection method as defined in claim 21 , wherein when the device is electrically connected to the connector, the ground level is provided to the first pin and the gate terminal of the second transistor through the second pin and the device so as to turn on the second transistor according to the first pin at the ground level, and the gate terminal of the first transistor and the detection signal is pulled up to the supply voltage, wherein the first transistor is turned on according to the detection signal at the supply voltage.