Non-volatile memory device and operating method thereof
A non-volatile memory device includes a memory cell array including a plurality of memory cells respectively connected to a plurality of word lines; a plurality of first pass transistors each connected to one side of one of the plurality of word lines; a plurality of second pass transistors each connected to the other side of one of the plurality of word lines; a voltage generator configured to generate a plurality of operating voltages and to apply the plurality of operating voltages to the memory cell array; in response to a first switch control signal, a first switch circuit configured to connect the plurality of first pass transistors to the voltage generator; and in response to a first switch control signal, a second switch circuit configured to connect the plurality of second pass transistors to the voltage generator.
1. A non-volatile memory device comprising:
a memory cell array including a plurality of memory blocks each including a plurality of memory cells respectively connected to a plurality of word lines;
a block decoder configured to generate a first block selection signal and select a first block of the plurality of memory blocks based on the first block selection signal;
a plurality of first pass transistors each connected to one side of one of the plurality of word lines of the first block;
a plurality of second pass transistors each connected to the other side of one of the plurality of word lines of the first block;
a voltage generator configured to generate a plurality of operating voltages and to apply the plurality of operating voltages to the memory cell array;
in response to a first switch control signal, a first switch circuit configured to connect the plurality of first pass transistors to the voltage generator and to apply a corresponding first voltage of the plurality of operating voltages to the one side of one of the plurality of word lines of the first block through a corresponding one of the plurality of first pass transistors; and
in response to a second switch control signal different from the first switch control signal, a second switch circuit configured to connect the plurality of second pass transistors to the voltage generator and to apply the corresponding first voltage to the other side of one of the plurality of word lines of the first block through a corresponding one of the plurality of second pass transistors,
wherein the one side of one of the plurality of word lines of the first block is directly connected to the other side of one of the plurality of word lines of the first block, in the same word line,
wherein the first switch circuit and the one side of one of the plurality of word lines of the first block are connected to each other through the corresponding one of the plurality of first pass transistors in response to the first block selection signal, and
wherein the second switch circuit and the other side of one of the plurality of word lines of the first block are connected to each other through the corresponding one of the plurality of second pass transistors in response to the first block selection signal.
2. The non-volatile memory device of claim 1 , wherein the memory cell array further includes a plurality of ground selection transistors respectively connected to a plurality of ground selection lines and a plurality of string selection transistors respectively connected to a plurality of string selection lines, and
wherein the non-volatile memory device further comprises:
a plurality of third pass transistors each connected to one side of one of the plurality of ground selection lines and one side of one of the plurality of string selection lines;
a plurality of fourth pass transistors each connected to the other side of one of the plurality of ground selection lines and the other side of one of the plurality of string selection lines;
in response to the first switch control signal, a third switch circuit configured to:
connect the plurality of third pass transistors to the voltage generator,
apply a corresponding second voltage of the plurality of operating voltages to the one side of one of the plurality of ground selection lines through a corresponding one of the plurality of third pass transistors, and
apply a corresponding third voltage of the plurality of operating voltages to the one side of one of the plurality of string selection lines through a corresponding one of the plurality of third pass transistors; and
in response to the second switch control signal, a fourth switch circuit configured to:
connect the plurality of fourth pass transistors to the voltage generator,
apply the corresponding second voltage to the other side of one of the plurality of ground selection lines through a corresponding one of the plurality of fourth pass transistors, and
apply the corresponding third voltage to the other side of one of the plurality of string selection lines through a corresponding one of the plurality of fourth pass transistors.
3. The non-volatile memory device of claim 1 , wherein the first switch circuit is configured to be enabled according to the first switch control signal such that the first switch circuit connects the plurality of first pass transistors to the voltage generator, and
wherein the second switch circuit is configured to be enabled according to the second switch control signal such that the second switch circuit connects the plurality of second pass transistors to the voltage generator.
4. The non-volatile memory device of claim 1 , wherein the memory cell array further includes a plurality of dummy memory cells respectively connected to a plurality of dummy word lines, and
wherein the non-volatile memory device further comprises:
a plurality of third pass transistors each connected to one side of one of the plurality of dummy word lines;
a plurality of fourth pass transistors each connected to the other side of one of the plurality of dummy word lines;
in response to the first switch control signal, a third switch circuit configured to connect the plurality of third pass transistors to the voltage generator and to apply a corresponding second voltage of the plurality of operating voltages to the one side of one of the plurality of dummy word lines through a corresponding one of the plurality of third pass transistors; and
in response to the second switch control signal, a fourth switch circuit configured to connect the plurality of fourth pass transistors to the voltage generator and to apply the corresponding second voltage to the other side of one of the plurality of dummy word lines through a corresponding one of the plurality of fourth pass transistors.
5. The non-volatile memory device of claim 1 , further comprising:
a detector having one side connected to a first node between the first switch circuit and one side of each of the plurality of word lines of the first block and the other side connected to a second node between the second switch circuit and the other side of each of the plurality of word lines of the first block and the detector configured to output a detection signal.
6. The non-volatile memory device of claim 5 , wherein the detector is configured to:
compare a voltage of the first node with a voltage of the second node when the first and second switch circuits are turned off, and
output the detection signal based on a result of the comparison.
7. The non-volatile memory device of claim 5 , wherein the detector is configured to:
detect a first time at which a voltage of the first node reaches a predetermined voltage,
compare a time at which a voltage of the first node reaches a set voltage with a time at which a voltage of the second node reaches the set voltage, and output the detection signal based on a result of the comparison.
8. The non-volatile memory device of claim 1 , further comprising:
a detector connected to any one of a first node between the first switch circuit and one side of each of the plurality of word lines of the first block and a second node between the second switch circuit and the other side of each of the plurality of word lines of the first block and the detector configured to output a detection signal.
9. The non-volatile memory device of claim 1 , wherein the non-volatile memory device further includes a detector configured to:
compare the number of first program loops for programming a first set of memory cells connected to a first word line of the plurality of word lines of the first block in a first mode in which the first switch circuit is enabled and the second switch circuit is disabled with the number of second program loops for programming the first set of memory cells in a second mode in which the first switch circuit is disabled and the second switch circuit is enabled, and
output a detection signal based on a result of the comparison.
10. A non-volatile memory device comprising:
a memory cell array including a plurality of memory cells respectively connected to a plurality of word lines;
a voltage generator configured to generate a first operating voltage; and
a switch circuit configured to apply the first operating voltage to any one of one side of one of the plurality of word lines and the other side of one of the plurality of word lines in a first mode, and apply the first operating voltage to one side of one of the plurality of word lines and the other side of one of the plurality of word lines in a second mode,
wherein the one side of one of the plurality of word lines is directly connected to the other side of one of the plurality of word lines in the same word line, and
wherein the switch circuit includes:
a first switch circuit configured to apply the first operating voltage to the one side of one of the plurality of word lines in response to a first switch control signal, and
a second switch circuit configured to apply the first operating voltage to the other side of one of the plurality of word lines in response to a second switch control signal different from the first switch control signal.
11. The non-volatile memory device of claim 10 , wherein,
in the first mode:
the first switch circuit is enabled and the second switch circuit is disabled in response to the second switch control signal having a different logic level from that of the first switch control signal, and
the first switch circuit is disabled and the second switch circuit is enabled in response to the second switch control signal having a different logic level from that of the first switch control signal, and
wherein, in the second mode, the first and second switch circuits are enabled in response to the first switch control signal and the second switch control signal having the same logic level as that of the first switch control signal.
12. The non-volatile memory device of claim 11 , further comprising:
a plurality of first pass transistors each connected between one side of one of the plurality of word lines and the first switch circuit; and
a plurality of second pass transistors each connected between the other side of one of the plurality of word lines and the second switch circuit.
13. The non-volatile memory device of claim 11 , further comprising:
a detector having one side connected to a first node between the first switch circuit and the one side of each of the plurality of word lines and the other side connected to a second node between the second switch circuit and the other side of each of the plurality of word lines and the detector configured to output a detection signal.
14. The non-volatile memory device of claim 11 , further comprising:
a detector connected to any one of a first node between the first switch circuit and one side of each of the plurality of word lines and a second node between the second switch circuit and the other side of each of the plurality of word lines and the detector configured to output a detection signal.
15. The non-volatile memory device of claim 11 , wherein the non-volatile memory device further includes a detector configured, in the first mode, to:
compare the number of first program loops for programming a first set of memory cells connected to a first word line of the plurality of word lines when the second switch circuit does not apply the first operating voltage to the other side of one of the plurality of word lines with the number of second program loops for programming the first set of memory cells when the first switch circuit does not apply the first operating voltage to the one side of one of the plurality of word lines, and
output a detection signal based on a result of the comparison.
16. The non-volatile memory device of claim 10 , wherein the memory cell array further includes a plurality of ground selection transistors respectively connected to a plurality of ground selection lines and a plurality of string selection transistors respectively connected to a plurality of string selection lines,
wherein the voltage generator is configured to generate a second operating voltage applied to one of the plurality of ground selection lines and a third operating voltage applied to one of the string selection lines,
wherein the switch circuit is configured to, in the first mode:
apply the second operating voltage to any one of one side of one of the plurality of ground selection lines and the other side of one of the plurality of ground selection lines, and
apply the third operating voltage to any one of one side of one of the plurality of string selection lines and the other side of one of the plurality of string selection lines, and
wherein the switch circuit is configured to, in the second mode:
apply the second operating voltage to one side of one of the plurality of ground selection lines and the other side of one of the plurality of ground selection lines, and
apply the third operating voltage to one side of one of the plurality of string selection lines and the other side of one of the plurality of string selection lines.