Semiconductor die with a vertical transistor device
The disclosure relates to a semiconductor die, including a vertical power transistor device, a pull-down transistor device, and a capacitor. The pull-down transistor device is connected between a gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in a conducting state. The capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one load terminal to the control terminal.
1. A semiconductor die, comprising:
a vertical power transistor device having a source region and a drain region at opposite sides of a semiconductor body and forming a load terminal, respectively, and a gate electrode;
a pull-down transistor device having a control terminal and switchable between a conducting state and a blocking state via the control terminal, and a capacitor;
a resistor connected between the capacitor and the control terminal of the pull-down transistor device,
wherein the pull-down transistor device is connected between the gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in the conducting state,
wherein the capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one of the load terminals to the control terminal.
2. The semiconductor die of claim 1 , further comprising a resistor connected between the control terminal of the pull-down transistor device and the ground terminal.
3. The semiconductor die of claim 1 , wherein the vertical power transistor device is an n-channel device and the capacitor is connected to the drain region of the vertical power transistor device, and wherein the source region of the vertical power transistor device is connected to the ground terminal.
4. The semiconductor die of claim 1 , wherein the capacitor is connected to the drain region of the vertical power transistor device, and wherein the drain region is arranged at a backside of the semiconductor body and forms a first capacitor electrode of the capacitor.
5. The semiconductor die of claim 1 , wherein the source region of the vertical power transistor device and a source region of the pull-down transistor device are electrically connected via a frontside metallization layer of the vertical power transistor device formed on a frontside of the semiconductor body, and wherein the frontside metallization layer extends above the pull-down transistor device.
6. The semiconductor die of claim 1 , wherein a drain region of the pull-down transistor device and the gate electrode of the vertical power transistor device are electrically connected in a metallization layer, in which a gate pad of the semiconductor die and/or a gate runner laterally aside the vertical power transistor device are formed.
7. The semiconductor die of claim 1 , wherein the pull-down transistor device has a body region with a lateral channel region, and a source and a drain region formed at a frontside of the semiconductor body, wherein a well region is formed in the semiconductor body, the well region doped with an opposite conductivity type as the source and the drain region of the vertical power transistor device, and wherein at least a portion of the pull-down transistor device is arranged vertically above the well region.
8. The semiconductor die of claim 1 , wherein the pull-down transistor device has a body region with a lateral channel region, and a source and a drain region formed at a frontside of the semiconductor body, wherein a shielding field electrode region with a shielding field electrode is formed in a shielding field electrode trench in the semiconductor body, and wherein at least a portion of the pull-down transistor device is arranged vertically above the shielding field electrode region.
9. The semiconductor die of claim 1 , wherein a second capacitor electrode of the capacitor, which is connected to the control terminal of the pull-down transistor device, comprises a trench electrode formed in a capacitor trench in the semiconductor body.
10. The semiconductor die of claim 9 , wherein the vertical power transistor device comprises a field electrode region formed in a field electrode trench in a drift region, and wherein the field electrode trench and the capacitor electrode trench have the same depth.
11. The semiconductor die of claim 9 , wherein the second capacitor electrode comprises a plurality of trench electrodes, each formed in a respective capacitor trench in the semiconductor body, wherein a metallization layer is formed on a frontside of the semiconductor body above an insulating layer, and wherein the metallization layer is connected to the trench electrodes via vertical interconnects.
12. The semiconductor die of claim 9 , wherein the semiconductor body comprises a lower semiconductor body and an upper epitaxial layer deposited onto the lower semiconductor body, wherein the capacitor trench extends from a frontside of the lower semiconductor body into the lower semiconductor body.
13. The semiconductor die of claim 1 , wherein the semiconductor body comprises a lower semiconductor body and an upper epitaxial layer deposited on the lower semiconductor body, and wherein the source region and a channel region of the vertical power transistor device are formed in the upper epitaxial layer.
14. A semiconductor die, comprising:
a vertical power transistor device having a source region and a drain region at opposite sides of a semiconductor body and forming a load terminal, respectively, and a gate electrode;
a pull-down transistor device having a control terminal and switchable between a conducting state and a blocking state via the control terminal, and a capacitor,
wherein the pull-down transistor device is connected between the gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in the conducting state,
wherein the capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one of the load terminals to the control terminal,
wherein the source region of the vertical power transistor device and a source region of the pull-down transistor device are electrically connected via a frontside metallization layer of the vertical power transistor device formed on a frontside of the semiconductor body,
wherein the frontside metallization layer extends above the pull-down transistor device.
15. The semiconductor die of claim 14 , further comprising a resistor connected between the control terminal of the pull-down transistor device and the ground terminal, wherein the resistor is formed in a metallization layer arranged on a smaller vertical height than the frontside metallization layer.
16. A semiconductor die, comprising:
a vertical power transistor device having a source region and a drain region at opposite sides of a semiconductor body and forming a load terminal, respectively, and a gate electrode;
a pull-down transistor device having a control terminal and switchable between a conducting state and a blocking state via the control terminal, and a capacitor,
wherein the pull-down transistor device is connected between the gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in the conducting state,
wherein the capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one of the load terminals to the control terminal,
wherein a drain region of the pull-down transistor device and the gate electrode of the vertical power transistor device are electrically connected in a metallization layer, in which a gate pad of the semiconductor die and/or a gate runner laterally aside the vertical power transistor device are formed.
17. A semiconductor die, comprising:
a vertical power transistor device having a source region and a drain region at opposite sides of a semiconductor body and forming a load terminal, respectively, and a gate electrode;
a pull-down transistor device having a control terminal and switchable between a conducting state and a blocking state via the control terminal, and a capacitor,
wherein the pull-down transistor device is connected between the gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in the conducting state,
wherein the capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one of the load terminals to the control terminal,
wherein the pull-down transistor device has a body region with a lateral channel region, and a source and a drain region formed at a frontside of the semiconductor body,
wherein a well region is formed in the semiconductor body, the well region doped with an opposite conductivity type as the source and the drain region of the vertical power transistor device,
wherein at least a portion of the pull-down transistor device is arranged vertically above the well region.
18. The semiconductor die of claim 17 , further comprising an additional implant region formed below the well region and configured to optimize breakdown voltage.
19. A semiconductor die, comprising:
a vertical power transistor device having a source region and a drain region at opposite sides of a semiconductor body and forming a load terminal, respectively, and a gate electrode;
a pull-down transistor device having a control terminal and switchable between a conducting state and a blocking state via the control terminal, and a capacitor,
wherein the pull-down transistor device is connected between the gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in the conducting state,
wherein the capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one of the load terminals to the control terminal,
wherein the pull-down transistor device has a body region with a lateral channel region, and a source and a drain region formed at a frontside of the semiconductor body,
wherein a shielding field electrode region with a shielding field electrode is formed in a shielding field electrode trench in the semiconductor body,
wherein at least a portion of the pull-down transistor device is arranged vertically above the shielding field electrode region.
20. The semiconductor die of claim 19 , wherein the semiconductor body comprises a lower semiconductor body and an upper epitaxial layer deposited onto the lower semiconductor body, and wherein the shielding field electrode trench extends from a frontside of the lower semiconductor body into the lower semiconductor body.
21. A semiconductor die, comprising:
a vertical power transistor device having a source region and a drain region at opposite sides of a semiconductor body and forming a load terminal, respectively, and a gate electrode; and
a pull-down transistor device having a control terminal and switchable between a conducting state and a blocking state via the control terminal, and a capacitor,
wherein the pull-down transistor device is connected between the gate electrode of the vertical power transistor device and a ground terminal and connects the gate electrode to the ground terminal in the conducting state,
wherein the capacitor is connected between one of the load terminals of the vertical power transistor device and the control terminal of the pull-down transistor device and capacitively couples the one of the load terminals to the control terminal,
wherein the second capacitor electrode comprises a plurality of trench electrodes, each formed in a respective capacitor trench in the semiconductor body,
wherein a metallization layer is formed on a frontside of the semiconductor body above an insulating layer,
wherein the metallization layer is connected to the trench electrodes via vertical interconnects.