Image sensor and vehicle
An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.
1. An image sensor, comprising:
a pixel group including a first region and a second region; and
a color filter having a first color on the pixel group, wherein:
the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode,
the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region,
each of the first pixel and the second pixel are arranged in an m*n arrangement, wherein m and n are natural numbers of 2 or more, such that at least four first pixels are in the first region and at least four second pixels are in the second region, and at least four first photodiodes are in the first region and at least four second photodiodes are in the second region,
in plane view, a total first photodiode area in the first region is greater than a total second photodiode area in the second region, and
in plane view, the first region surrounds the second region.
2. The image sensor as claimed in claim 1 , wherein the first pixel further includes a connecting transistor connecting the first floating diffusion region and the second floating diffusion region.
3. The image sensor as claimed in claim 1 , wherein the second region has a rhombic shape in plane view.
4. The image sensor as claimed in claim 1 , wherein, in plane view, the first region has a cross shape and the second region has a rectangular shape.
5. The image sensor as claimed in claim 1 , wherein, in plane view, a total area of the first region is greater than a total area of the second region.
6. The image sensor as claimed in claim 1 , wherein, in plane view, the first photodiode in the first pixel has an area that is the same as that of the second photodiode in the second pixel.
7. The image sensor as claimed in claim 6 , wherein:
the first pixel and the second pixel are each arranged in the m*n arrangement, and
the first pixel includes a plurality of first sub-pixels, each of the plurality of first sub-pixels including the first photodiode, the first floating diffusion region, and the first transfer transistor.
8. The image sensor as claimed in claim 7 , wherein the second pixel includes a plurality of second sub-pixels, each of the plurality of second sub-pixels including the second photodiode, the second floating diffusion region, and the second transfer transistor.
9. The image sensor as claimed in claim 1 , further comprising:
a first microlens corresponding to the first pixel; and
a second microlens corresponding to the second pixel.
10. The image sensor as claimed in claim 1 , wherein:
the first pixel is arranged in the m*n arrangement,
the first pixel includes a plurality of sub-pixels, each of the plurality of sub-pixels including the first photodiode, the first floating diffusion region, and the first transfer transistor, and
the image sensor further comprises:
a first microlens corresponding to each of the plurality of sub-pixels; and
a second microlens corresponding to the second pixel.
11. The image sensor as claimed in claim 1 , further comprising a substrate, wherein:
the first photodiode and the second photodiode are disposed in the substrate, and
at least a part of a gate of the first transfer transistor and at least a part of a gate of the second transfer transistor are disposed inside the substrate.
12. The image sensor as claimed in claim 1 , further comprising:
a substrate, the first photodiode and the second photodiode being disposed in the substrate; and
a pixel separation pattern defining the first pixel and the second pixel inside the substrate.
13. The image sensor as claimed in claim 12 , wherein:
the substrate has a first side, and a second side opposite to the first side,
the color filter is disposed on the second side of the substrate, and
the pixel separation pattern extends from the first side of the substrate to the second side of the substrate.
14. The image sensor as claimed in claim 12 , wherein:
the substrate has a first side, and a second side opposite to the first side,
the color filter is disposed on the second side of the substrate, and
the pixel separation pattern extends from the second side of the substrate and penetrates a part of the substrate.
15. An image sensor, comprising:
a pixel group including a first region and a second region; and
a color filter having a first color on the pixel group, wherein:
the first region includes a single first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode,
the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region,
the second pixel is arranged in an m*n arrangement, wherein m and n are natural numbers of 2 or more, such that at least four second pixels are in the second region, and at least four second photodiodes are in the second region,
in plane view, a total first photodiode area in the first region is greater than a total second photodiode area in the second region, and
a single first pixel is present in the pixel group.
16. A vehicle, comprising:
an electronic control unit; and
an image sensor connected to the electronic control unit, the image sensor including:
a pixel array including a plurality of pixel groups having a first region and second region;
color filters respectively corresponding to each of the plurality of pixel groups on the pixel array; and
a readout circuit that connects the pixel array and the electronic control unit, wherein:
the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode,
the second region includes a second pixel including a second photodiode, a second floating diffusion region on the second photodiode, and a second transfer transistor on the second photodiode,
each of the first pixel and the second pixel are arranged in an m*n arrangement in each pixel group, wherein m and n are natural numbers of 2 or more, such that at least four first pixels are in each pixel group and at least four second pixels are in each pixel group, and at least four first photodiodes are in each pixel group and at least four second photodiodes are in each pixel group,
in plane view, a total first photodiode area is greater than a total second photodiode area in each pixel group, and
in plane view, the first region surrounds the second region.
17. The vehicle as claimed in claim 16 , wherein the first pixel further includes a connecting transistor connecting the first floating diffusion region and the second floating diffusion region.
18. The vehicle as claimed in claim 16 , wherein the second region has a rhombic shape in plane view.
19. The vehicle as claimed in claim 16 , wherein the image sensor further includes:
a first microlens corresponding to the first pixel; and
a second microlens corresponding to the second pixel.