Fe-FET structure with buried electrode
A ferroelectric transistor (FeFET) memory device includes a metal gate, a gate dielectric layer adjacent to the metal gate, a semiconductor channel layer adjacent to the gate dielectric layer, a metal drain electrode, and a metal source electrode recessed into the semiconductor channel layer. The metal gate may be oriented above or below the metal source and drain electrodes with respect to a semiconductor substrate.
1. A ferroelectric transistor (FeFET) memory device comprising:
a metal gate;
a gate dielectric layer adjacent to the metal gate;
a semiconductor channel layer adjacent to the gate dielectric layer;
a metal drain electrode; and
a metal source electrode recessed into the semiconductor channel layer,
wherein the metal gate is vertically spaced apart from the semiconductor channel layer, the metal source electrode, and the metal drain electrode by the gate dielectric layer.
2. The FeFET memory device of claim 1 , wherein a cross-sectional shape of the metal source electrode is different from a cross-sectional shape of the metal drain electrode.
3. The FeFET memory device of claim 2 , wherein the cross-sectional shape of the metal source electrode is a stepped shape, and the cross-sectional shape of the metal drain electrode is a quadrangular shape.
4. The FeFET memory device of claim 1 , wherein a surface of the metal source electrode that faces the gate dielectric layer is closer to the gate dielectric layer than a surface of the metal drain electrode that faces the metal gate.
5. The FeFET memory device of claim 1 , wherein a first portion of the metal source electrode is vertically aligned with the metal gate and has a first thickness, and a second portion of the metal source electrode has a second thickness greater than the first thickness.
6. The FeFET memory device of claim 1 , wherein the metal drain electrode is located outside of the semiconductor channel layer.
7. The FeFET memory device of claim 1 , wherein a thickness of the semiconductor channel layer is from 10 to 50 nanometers.
8. The FeFET memory device of claim 1 , wherein the semiconductor channel layer has at least three different thicknesses.
9. The FeFET memory device of claim 1 , wherein the gate dielectric layer comprises a thickness of from 4 to 20 nanometers of ferroelectric high-K dielectric material.
10. The FeFET memory device of claim 1 , wherein the metal drain electrode is recessed into the semiconductor channel layer by a depth that is less than a depth to which the metal source electrode is recessed into the semiconductor channel layer.
11. A semiconductor device comprising:
a semiconductor substrate; and
a ferroelectric transistor (FeFET) memory device comprising:
a metal gate;
a gate dielectric layer adjacent to the metal gate;
a semiconductor channel layer adjacent to the gate dielectric layer;
a metal drain electrode; and
a metal source electrode recessed into the semiconductor channel layer,
wherein the metal gate is vertically spaced apart from the semiconductor channel layer, the metal source electrode, and the metal drain electrode by the gate dielectric layer.
12. The semiconductor device of claim 11 , wherein a cross-sectional shape of the metal source electrode is different from a cross-sectional shape of the metal drain electrode.
13. The semiconductor device of claim 12 , wherein the cross-sectional shape of the metal source electrode is a stepped shape, and the cross-sectional shape of the metal drain electrode is a quadrangular shape.
14. The semiconductor device of claim 11 , wherein a surface of the metal source electrode that faces the gate dielectric layer is closer to the gate dielectric layer than a surface of the metal drain electrode that faces the metal gate.
15. The semiconductor device of claim 11 , wherein a first portion of the metal source electrode is vertically aligned with the metal gate and has a first thickness, and a second portion of the metal source electrode has a second thickness greater than the first thickness.
16. The semiconductor device of claim 11 , wherein the metal drain electrode is located outside of the semiconductor channel layer.
17. The semiconductor device of claim 11 , wherein a thickness of the semiconductor channel layer is from 10 to 50 nanometers.
18. The semiconductor device of claim 11 , wherein the semiconductor channel layer has at least three different thicknesses.
19. The semiconductor device of claim 11 , wherein the FeFET memory device is located in a back end of line (BEOL) portion of the semiconductor device.
20. A method for forming a ferroelectric transistor (FeFET) memory device, the method comprising:
forming a metal gate;
forming a gate dielectric layer;
forming a semiconductor channel layer;
forming a metal drain electrode; and
forming a metal source electrode,
wherein the gate dielectric layer is adjacent to the metal gate, the semiconductor channel layer is adjacent to the gate dielectric layer, and the metal source electrode is recessed into the semiconductor channel layer, and
wherein the metal gate is vertically spaced apart from the semiconductor channel layer, the metal source electrode, and the metal drain electrode by the gate dielectric layer.