Resist composition and method of forming resist pattern
A resist composition containing a resin component (A1) having a constitutional unit (a01) derived from a compound represented by General Formulae (a0-1) and one or more compounds selected from the group consisting of a compound (B01) represented by General Formula (b0-1) and a compound (B02) represented by General Formula (b0-2), W 01 represents a polymerizable group-containing group, Ya 01 represents a single bond or the like, Rx 01 represents an acid dissociable group, R b1 and R b4 represents an aryl group having a fluorine atom, R b2 , R b3 , and R b5 represents an aryl group or the like which may have a substituent, and X 01 − and X 02 − represents a counter anion
1. A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising:
a resin component (A1) which exhibits changed solubility in a developing solution under action of acid; and
an acid generator component (B) which generates an acid upon exposure,
wherein the resin component (A1) contains one or more compounds selected from the group consisting of a polymeric compound represented by chemical formula (A1-2), a polymeric compound represented by chemical formula (A1-4), a polymeric compound represented by chemical formula (A1-x1) and a polymeric compound represented by chemical formula (A1-x2), and
the acid generator component (B) contains one or more compounds selected from the group consisting of a compound represented by Chemical Formula (B01-6), a compound represented by Chemical Formula (B01-9), a compound represented by Chemical Formula (B01-x1), a compound represented by Chemical Formula (B01-x2), a compound represented by Chemical Formula (B01-x3), a compound represented by Chemical Formula (B01-x4), a compound represented by Chemical Formula (B01-x5), a compound represented by Chemical Formula (B01-x6), a compound represented by Chemical Formula (B01-x7) and a compound represented by Chemical Formula (B01-x8):
2. The resist composition according to claim 1 , wherein a content of the one or more compounds selected from the group consisting of the compound represented by Chemical Formula (B01-6), the compound represented by Chemical Formula (B01-9), the compound represented by Chemical Formula (B01-x1), the compound represented by Chemical Formula (B01-x2), the compound represented by Chemical Formula (B01-x3), the compound represented by Chemical Formula (B01-x4), the compound represented by Chemical Formula (B01-x5), the compound represented by Chemical Formula (B01-x6), the compound represented by Chemical Formula (B01-x7) and the compound represented by Chemical Formula (B01-x8) is in a range of 5 to 40 parts by mass with respect to 100 parts by mass of the resin component (A1).
3. A method of forming a resist pattern, comprising:
a resist film on a support using the resist composition according to claim 1 ;
exposing the resist film; and
developing the exposed resist film to form a resist pattern.
4. The method of forming a resist pattern according to claim 3 , wherein the resist film is exposed with an extreme ultraviolet ray (EUV) or an electron beam (EB).